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2SA1579 / 2SA1514K / 2SA1038S
Transistors
High-voltage Amplifier Transistor
(−120V, −50mA)
2SA1579 / 2SA1514K / 2SA1038S
zFeatures
1) High breakdown voltage. (BV
CEO = −120V)
2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.
zExternal dimensions (Unit : mm)
2SA1579
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SA1514K
0.4
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
2SA1038S
ROHM : SPT
EIAJ : SC-72
)
3
(
0.3
1.25
2.1
0.15
0.1Min.
0.15
0.3Min.
3
)
15Min.
(
(1) (2) (3)
Each lead has same dimensions
0~0.1
)
1
(
)
2
)
(
3
(
1.6
2.8
0 to 0.1
42
3Min.
0.45
2.5
5
)
1
(
0.65
)
2
2.0
1.3
(
0.65
0.2
0.9
0.7
(1) Emitter
(2) Base
(3) Collector
1.9
2.9
0.95 0.95
1.1
0.8
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
0.45
0.5
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Rev.A 1/3
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
zPackaging specifications and h
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes h
∗
FE
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
2SA1579 / 2SA1514K
2SA1038S
FE
Type 2SA1038S
2SA1579
UMT3
RS
R
T106
3000
Parameter Symbol Min. Typ. Max. Unit Conditions
∗
V
V
V
Tstg
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
CEO
EBO
I
P
Tj
CBO
EBO
h
f
C
C
CBO
CEO
EBO
FE
T
−55 to +150
2SA1514K
SMT3
RS
R
T146
3000
−120
−120
−5
−
−
−
180
−
−
2SA1579 / 2SA1514K / 2SA1038S
Limits
−120
−120
−5
−50
0.2
0.3
150
∗
−
−
−
−
−
−
−
140
3.2
−
−
−
−0.5
−0.5
−0.5
560
−
−
Unit
V
V
V
mA
W
°C
°C
SPT
RS
−
TP
5000
V
V
V
µA
µA
V
−
MHz
pF
I
C
= −50µA
I
C
= −1mA
E
= −50µA
I
CB
= −100V
V
V
EB
= −4V
C/IB
= −10mA/−1mA
I
V
CE
= −6V, IC= −2mA
CE
= −12V, IE=2mA, f=100MHz
V
CB
= −12V, IE=0A, f=1MHz
V
Rev.A 2/3