ROHM 2SA1036K User Manual

Medium Power Transistor

2SA1036K

Features Dimensions (Unit : mm)

1) Large I
I

2) Low V
operation.

3) Complements the 2SC2411K.

Structure

Epitaxial planer type
PNP silicon transistor

Absolute maximum ratings (Ta=25C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

∗

P

C MAX.

Electrical characteristics (Ta=25C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
Collector-emitter saturation voltage

DC current transfer ratio
Transition frequency
Output capacitance

Packaging specifications

Type

values are classifies as follows.

h

FE

.

C

= -500mA

CMAX.

Ideal for low-voltage

CE(sat).

Parameter

must not be exceeded.

Parameter

h

FE

QR2SA1036K

Item

h

120 to 270R180 to 390

FE

Symbol Limits Unit

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Symbol

BV
BV
BV

V

Package
Code
Basic ordering unit (pieces)

Q

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob

−40

−32

−5

−0.5

0.2

150

−55 to +150

Min.

−40

−32

−5

−

−

−

120

−

−

Taping

T146
3000

2SA1036K

(1)

ROHM : SMT3
EIAJ : SC-59

V
V

Denotes h

V

∗

A

∗

W

°C
°C

Typ. Max. Unit Conditions

= −100μA

I

−

−

−

−

−

−

−

200

7

−1

−1

−0.6

390

V

−

−

−

MHz

−

−

μA
μA

pF

C

I

= −1mA

V

C

I

= −100μA

V

E

V

= −20V

CB

V

= −4V

EB

= −300mA/−30mA

I

V

C/IB

V

−

= −3V, IC= −100mA

CE

V

= −5V, IE=20mA, f=100MHz

CE

V

= −10V, IE=0A, f=1MHz

CB

±

2.9 0.2

±

±

1.9 0.2

0.95

0.95
(2)

0.1

-

+0.2

1.6

(3)

+0.1

0.4

-

0.05

All terminals have
same dimensions

Abbreviated symbol : H ∗

FE

±

2.8 0.2

(1) Emitter
(2) Base
(3) Collector

0.15

1.1

+0.1

-

+0.2

-0.1

0.8 0.1

0.06

±

0~0.1

0.3~0.6

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2009.12 - Rev.B

2

Fig.1 Grounded emitter propogation

-100

-5

)

0

)

1000

0

1000

0

DC CURRENT GAIN : h

)

)

0

-1.0

COLLECTOR SATURATION

)

0

(

F)

)

e

0

Electrical characteristic curves

-500
Ta=100 C

-200

25 C

-100

mA)

-

(

C

COLLECTOR CURRENT : I

55 C

-50

-20

-10

-5

-2

-1

-0.5

-0.2

-0.1

-0.20

-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.

BASE TO EMITTER VOLTAGE : V

500

FE

200

100

50

DC CURRENT GAIN : h

20

-1 -2 -5 -10 -20 -50 -100 -200 -500-100
COLLECTOR CURRENT : I

Fig.4 DC current gain vs.

collector current (

-0.5

-0.3

V)

(

-0.2

CE(sat)

-0.1
Ta=100 C

25 C

-0.05

-

VOLTAGE : V

55 C

-0.03

-0.02

-0.01

-1 -2

-10 -20 -50 -100 -200 -500 -100

-5

COLLECTOR CURRENT : I

Fig.7 Collector-emitter saturation
voltage vs. collector current (

VCE=-5V

-

-

3V
1V

V

Ta=25 C

(

mA)

C

C

=-3

V

CE

(V)

BE

Ι

)

lC/l

=

10

B

(

mA)

ΙΙ

Data Sheet 2SA1036K

Ta=25 C

-

1mA

mA)

-80

C (

-60

-40

-20

COLLECTOR CURRENT : I

0

-1

0-2-4
COLLECTOR TO EMITTER VOLTAGE : V

-

0.9mA

-3

-

0.8mA

-

0.7mA

-

0.6mA

-

0.5mA

-

-

0.4mA

0.3mA

-

0.2mA

-

0.1mA

I

B

=0A

V

CE

(

Fig.2 Grounded emitter output

Ι

characteristics (

500

FE

200

100

50

20

Ta=100 C

25 C

-

55 C

-1 -2 -5 -10 -20 -50 -100 -200 -500 -100
COLLECTOR CURRENT : I

)

(mA)

C

V

=

-

3V

CE

Fig.5 DC current gain vs.

ΙΙ

collector current (

)

Ta=25 C

V

=

-

5V

MHz)

(

T

1000

500

200

100

50

TRANSITION FREQUENCY : f

0.5 20

12 510

EMITTER CURRENT : I

Fig.8 Gain bandwidth product vs.
emitter current

CE

5

(

mA)

E

-500

mA)

(

-400

C

-300

-200

-100

COLLECTOR CURRENT : I

0

0

COLLECTOR TO EMITTER VOLTAGE : V

-5

-

2.0mA

-

Ta=25 C

-

5.0mA

-

4.5mA

-

1.5mA

-

1.0mA

4.0mA

-

3.5mA

-

3.0mA

-

2.5mA

-

0.5mA

IB=0

A

CE

Fig.3 Ground emitter output

ΙΙ

characteristics (

V

(

CE(sat)

-1

-0.5

-0.2

-0.1

IC/I

=

50

B

-0.05

-0.02

COLLECTOR SATURATION VOLTAGE : V

20
10

-1 -2 -5 -10 -20 -50 -100 -200 -500
COLLECTOR CURRENT : I

)

Ta=25 C

(

mA)

C

Fig.6 Collector emitter saturation
voltage vs. collector current (

p

pF)

(

100

50

20

10

5

2

-1 -2 -5 -10

-0.5 -20

COLLECTOR OUTPUT CAPACITANCE : Cob

EMITTER INPUT CAPACITANCE : Cib

COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V

Fig.9 Collectur output capacitance vs.

Ta=25 C

f=1MHz

I

=

0A

E

I

=

0A

C

CB

(

V)

EB

collector-base voltage. Emitter input
capacitance vs. emitter -base voltag

-1

(

V

Ι

-5

(

V

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.B