ROHM 1SS400 Datasheet
Diodes
Switching diode
1SS400
Applications
!!!!
High speed switching
Features
!!!!
1) Extremely small surface mounting type.(EMD2)
2) High Speed.(t
3) High reliability.
Construction
!!!!
Silicon epitaxial planar
rr
=1.2ns Typ.)
External dimensions
!!!!
0.05
0.1
±
±
1.2
1.6
ROHM : EMD2
EIAJ : SC - 79
JEDEC : SOD - 523
(Units : mm)
A
0.8±0.05
CATHODE MARK
0.3±0.05
0.6±0.1
1SS400
0.12
±0.05
Absolute maximum ratings
!!!!
Parameter Symbol Limits Unit
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Junction temperature
Storage temperature
Electrical characteristics
!!!!
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
(Ta = 25°C)
RM
V
V
R
I
FM
I
O
I
surge
Tj 125
Tstg
(Ta = 25°C)
V
F
R
I
C
t
rr
90
80
225 mA
100 mA
500 mA
−55 ~ +125
−−1.2 V IF=100mA
−
T
− 0.72 3.0 pF V
−−4nsV
°C
°C
V
V
µA
R
=80V− 0.1
V
R
=0.5V , f=1MHz
R
=6V , IF=10mA , RL=100Ω
Diodes
Electrical characteristic curves
!!!!
1
100m
(A)
F
10m
1m
100µ
FORWARD CURRENT : I
10µ
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE : V
Fig.1 Forward characteristics
Ta=125°C
Ta=75°C
Ta=25°C
25°C
Ta=−
F
(V)
(Ta = 25°C)
1m
0.1m
(A)
R
10µ
100n
REVERSE CURRENT : I
10n
Ta=125
°C
1µ
1n
0
Ta=75
°C
Ta=25
°C
20 40 60 80 100 120
REVERSE VOLTAGE : V
Fig.2 Reverse characteristics
1SS400
10
(pF)
T
C
5
2
1
0.5
0.2
CAPACITANCE BETWEEN TERMINALS :
0.1
0 2 4 6 8 10 12 14
R
(V)
REVERSE VOLTAGE :
Fig.3 Capacitance between terminals
VR (V)
3
(ns)
rr
2
1
REVERSE RECOVERY TIME : t
0
0
10 20 30
FORWARD CURRENT : I
Fig.4 Reverse recovery time
VR=6V
I
rr
=1/10I
F
(mA)
R
e (A)
surg
SURGE CURRENT : I
100
50
20
10
5
2
1
0.1 1 10 100 1 000 10 000
Fig.5 Surge current characteristics
characteristics
PULSE GENERATOR
OUTPUT 50Ω
0.01µF
5kΩ
D.U.T.
50Ω
SAMPLING
OSCILLOSCOPE
Fig.6 Reverse recovery time (trr) measurement circuit
PULSE
Single pulse
PULSE WIDTH : Tw (ms)
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