ROHM 1SS376 Datasheet
Diodes
Switching diode
1SS376
Applications
!!!!
High voltage switching
Features
!!!!
1) Small surface mounting type. (UMD2)
RM
2) V
=300V guaranteed.
3) High reliability.
Construction
!!!!
Silicon epitaxial planar
0.3±0.05 0.1±0.05
1.25±0.1
Model identification label
CATHODE MARK
1.7±0.1
2.5±0.2
+0.2
0.7
−0.1
1SS376
External dimensions
!!!!
Absolute maximum ratings
!!!!
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (10ms)
Junction temperature
Storage temperature
Electrical characteristics
!!!!
Parameter Symbol Min. Typ. Max. Unit Conditons
Forward voltage
Reverse current
Reverse current
Capacitance between terminals
Reverse recovery time
(Units : mm)
(Ta = 25°C)
Symbol
RM
V
R
V
FM
I
I
O
surge
I
Tj
Tstg
(Ta = 25°C)
F
V
R
I
I
R
T
C
t
rr
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
Limits Unit
300 V
250 V
300 mA
100 mA
2A
125 °C
−55~+125 °C
−−1.2 V IF=100mA
−−0.2 µAVR=250V
−−100 µAVR=300V
R
−−3pFV
−−100 ns IR=30mA, IF=30mA, Irr=3mA
=0V, f=1MHz
Diodes
Electrical characteristic curves
!!!!
100m
(A)
F
(Ta = 25°C)
100µ
(A)
R
10µ
125°C
1SS376
(pF)
T
1.2
10m
125°C
75°C
1m
FORWARD CURRENT : I
200µ
25°C
−25°C
0.5 1.00
FORWARD VOLTAGE : V
Fig.1 Forward characteristics
60
(ns)
rr
40
REVERSE RECOVERY TIME : t
20
0204060
FORWARD CURRENT : I
F
Fig.4 Reverse recovery time
characteristics
1µ
100n
REVERSE CURRENT : I
10n
2n
0
50 100 150 200 250 300
F
(V)
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
75°C
25°C
1.1
CAPACITANCE BETWEEN TERMINALS : C
1.0
0102030
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between
terminals characteristics
Surge (A)
F
10
5
0
FORWARD SURGE CURRENT : I
Fig.5 Surge current characteristics
NON REPETITIVE
Ta=25°C
PULSE WIDTH
1 10 100 10000.2
PULSE WIDTH : TIME (ms)
FORWARD SURGE
CURRENT
P=50%
(A)
I
F
100
80
60
40
Io CURRENT (%)
20
0
0
25 50 75 100 125
AMBIENT TEMPERATURE : Ta (°C)
Fig.6 Derating curve
(mounting on glass epoxy PCBs)
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