ROHM 1SS356 Datasheet
Diodes
Band switching diode
1SS356
1SS356
Applications
!!!!
High frequency switching
Features
!!!!
1) Small surface mounting type. (UMD2)
2) High reliability.
Construction
!!!!
Silicon epitaxial planar
Absolute maximum ratings
!!!!
Parameter Symbol Limits Unit
DC reverse voltage
DC forward current
Junction temperature
Storage temperature
(Ta=25°C)
R
V
F
I
Tj 125
Tstg
!!!!
35 V
100 mA
−55~+125
External dimensions
0.1
0.2
±
±
1.7
2.5
ROHM : UMD2
EIAJ : SC - 76
JEDEC : SOD - 323
°C
°C
1.25±0.1
(Units : mm)
CATHODE MARK
0.3±0.05
+0.1
0.1
−0.05
+0.2
0.7
−0.1
Electrical characteristics
!!!!
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Forward operating resistance
(Ta=25°C)
V
F
I
R
T
C
r
F
− 1.0 V IF=10mA
− 10 nA VR=25V
− 1.2 pF V
− 0.9 Ω IF=2mA, f=100MHz
−
−
R
−
−
=6V, f=1MHz
Diodes
Electrical characteristic curves
!!!!
1
100m
mA)
(
10m
1m
100µ
10µ
FORWARD CURRENT : IF
1µ
100n
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
FORWARD VOLTAGE : VF (V)
Fig. 1 Forward characteristics
(Ta=25°C)
10.0
REVERSE CURRENT : IR (nA)
1.0
0.1
0 1020304050
REVERSE VOLTAGE : VR (V)
Fig. 2 Reverse characteristics
1SS356
3
pF)
(
2
1
CAPACITANCE BETWEEN TERMINALS : CT
0
0
10 20 30
REVERSE VOLTAGE : V
Fig. 3 Capacitance between
terminals characteristics
R
(
V)
1.0
(Ω)
0.5
0.2
FORWARD OPERATING RESISTANCE : rF
0
12 510
FORWARD CURRENT : I
f=100MHz
F
(mA)
Fig. 4 Forward operating
resistance characteristics
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