ROHM 1SS355 Schematic [ru]

1SS355

Diodes

Switching diode

1SS355

zApplications zDimensions (Unit : mm) zLand size figure (Unit : mm)
High speed switching

1.25±0.1

zFeatures

1) Ultra small mold type.(UMD2)

2) High reliability.

zConstruction
Silicon epitaxial planar

zStructure

0.3±0.05

RO HM : UM D2
JEDEC : S0D-323
JEITA : SC-90/A

dot (year week factory)

zT aping s pecification (Unit : mm)

4.0±0.1

2.0±0.05

1.40±0.1

zAbsolute maximum ratings (Ta=25°C)

Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current
Average rectified forward current
Surge current （t=1s
Junction temperature
Storage temperature

Parameter

）

Symbol Unit

V

RM

V

R

I

FM

Io mA

I

surge

Tj

Tstg

Limits

90

80
225
100
500
150

-55 to +150

zElectrical characteristics (T a=25°C)

Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time

Parameter

Symbol Min. Typ. Max. Unit Conditions

V

F

I

R

--1.2V

--0.1µA
Ct - - 3 pF
trr - - 4 ns

0.1±0.1

　　　 0.05

1.7±0.1

2.5±0.2

0.7±0.2

　　　 0.1

φ1.55±0.05

4.0±0.1 φ1.05

0.9MIN.

0.8MIN.

UMD2

1.75±0.1

3.5±0.05

8.0±0.2

2.75

V
V

mA

mA

℃
℃

I

=100mA

F

V

=80V

R

V

=0.5V , f=1MHz

R

V

=6V , IF=10mA , RL=100Ω

R

2.1

0.3±0.1

2.8±0.1

1.0±0.1

Rev.C 1/3

1SS355

Diodes

zElectrical characteristic curves (T a=25°C)

100

10

Ta=125℃

Ta=75℃

1

FORWARD CURRENT:IF(mA)

0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

Ta=25℃

Ta=-25℃

10

1

0.1

0.01

0.001

REVERSE CURRENT:IR(uA)

0.0001
0 20406080100120

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

10

1

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

0.1
0102030

REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

f=1MHz

950

940

930

920

IF(mA)

910

FORWARD VOLTAGE:VF(mA)

900

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

100

10

PEAK SURGE

FORWARD CURRENT:IFSM(A)

1

0.1 1 10 100

AVE:922.4mV

VF DISPERSION MAP

AVE:13.6A

IFSM DISRESION MAP

TIME:t(ms)

IFSM-t CHARACTERISTICS

Ifsm

Ifsm

Ta=25

IF=100mA

n=30pcs

8.3ms

t

1cyc

100

90

80

70

60

50

40

30

20

REVERSE CURRENT:IR(nA)

10

0

3

2.5

2

1.5

1

0.5

RESERVE RECOVERY TIME:trr(ns)

0

1000

100

TRANSIENT

10

THAERMAL IMPEDANCE:Rth (℃/W)

1

0.001 0.01 0.1 1 10 100 1000

AVE:31.7nA

IR DISPERSION MAP

AVE:1.3ns

trr DISPERSION MAP

Mounted on epoxy board

IM=1mA

time

1ms

300us

TIME:t(s)

Rth-t CHARACTERISTICS

Ta=25℃
VR=80V
n=30pcs

　Ta=25℃

　VR=6V

　IF=10mA

　RL=100Ω

Rth(j-a)

Rth(j-c)

IF=10mA

1

0.99

0.98

0.97

0.96

0.95

0.94

0.93

TERMINALS:Ct(pF)

0.92

CAPACITANCE BETWEEN

0.91

0.9

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

0.1 1 10 100

0.001

(W)

R

0.0005

REVERSE POWER

DISSIPATION:P

0

0 20406080100120

AVE:0.961pF

Ct DISPERSION MAP

Ifsm

8.3ms

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

D=1/2

Sin(θ＝180)

DC

REVERSE VOLTAGE:VR(V)

CHARACTERISTICS

VR-P

R

1cyc

Ta=25℃

VR=0.5V

f=1MHz

n=10pcs

8.3ms

Rev.C 2/3