Datasheet 1SS355 Datasheet (ROHM) [ru]

1SS355

Diodes

Switching diode

1SS355

zApplications zDimensions (Unit : mm) zLand size figure (Unit : mm)
High speed switching

1.25±0.1

zFeatures

1) Ultra small mold type.(UMD2)

2) High reliability.

zConstruction
Silicon epitaxial planar

zStructure

0.3±0.05

RO HM : UM D2
JEDEC : S0D-323
JEITA : SC-90/A

dot (year week factory)

zT aping s pecification (Unit : mm)

4.0±0.1

2.0±0.05

1.40±0.1

zAbsolute maximum ratings (Ta=25°C)

Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current
Average rectified forward current
Surge current （t=1s
Junction temperature
Storage temperature

Parameter

）

Symbol Unit

V

RM

V

R

I

FM

Io mA

I

surge

Tj

Tstg

Limits

90

80
225
100
500
150

-55 to +150

zElectrical characteristics (T a=25°C)

Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time

Parameter

Symbol Min. Typ. Max. Unit Conditions

V

F

I

R

--1.2V

--0.1µA
Ct - - 3 pF
trr - - 4 ns

0.1±0.1

　　　 0.05

1.7±0.1

2.5±0.2

0.7±0.2

　　　 0.1

φ1.55±0.05

4.0±0.1 φ1.05

0.9MIN.

0.8MIN.

UMD2

1.75±0.1

3.5±0.05

8.0±0.2

2.75

V
V

mA

mA

℃
℃

I

=100mA

F

V

=80V

R

V

=0.5V , f=1MHz

R

V

=6V , IF=10mA , RL=100Ω

R

2.1

0.3±0.1

2.8±0.1

1.0±0.1

Rev.C 1/3

1SS355

Diodes

zElectrical characteristic curves (T a=25°C)

100

10

Ta=125℃

Ta=75℃

1

FORWARD CURRENT:IF(mA)

0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

Ta=25℃

Ta=-25℃

10

1

0.1

0.01

0.001

REVERSE CURRENT:IR(uA)

0.0001
0 20406080100120

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

10

1

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

0.1
0102030

REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

f=1MHz

950

940

930

920

IF(mA)

910

FORWARD VOLTAGE:VF(mA)

900

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

100

10

PEAK SURGE

FORWARD CURRENT:IFSM(A)

1

0.1 1 10 100

AVE:922.4mV

VF DISPERSION MAP

AVE:13.6A

IFSM DISRESION MAP

TIME:t(ms)

IFSM-t CHARACTERISTICS

Ifsm

Ifsm

Ta=25

IF=100mA

n=30pcs

8.3ms

t

1cyc

100

90

80

70

60

50

40

30

20

REVERSE CURRENT:IR(nA)

10

0

3

2.5

2

1.5

1

0.5

RESERVE RECOVERY TIME:trr(ns)

0

1000

100

TRANSIENT

10

THAERMAL IMPEDANCE:Rth (℃/W)

1

0.001 0.01 0.1 1 10 100 1000

AVE:31.7nA

IR DISPERSION MAP

AVE:1.3ns

trr DISPERSION MAP

Mounted on epoxy board

IM=1mA

time

1ms

300us

TIME:t(s)

Rth-t CHARACTERISTICS

Ta=25℃
VR=80V
n=30pcs

　Ta=25℃

　VR=6V

　IF=10mA

　RL=100Ω

Rth(j-a)

Rth(j-c)

IF=10mA

1

0.99

0.98

0.97

0.96

0.95

0.94

0.93

TERMINALS:Ct(pF)

0.92

CAPACITANCE BETWEEN

0.91

0.9

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

0.1 1 10 100

0.001

(W)

R

0.0005

REVERSE POWER

DISSIPATION:P

0

0 20406080100120

AVE:0.961pF

Ct DISPERSION MAP

Ifsm

8.3ms

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

D=1/2

Sin(θ＝180)

DC

REVERSE VOLTAGE:VR(V)

CHARACTERISTICS

VR-P

R

1cyc

Ta=25℃

VR=0.5V

f=1MHz

n=10pcs

8.3ms

Rev.C 2/3

1SS355

Diodes

0.2
DC

0.15
D=1/2

0.1

AVERAGE RECTIFIED

0A

0.05

0V

FORWARD CURRENT:Io(A)

0

0 25 50 75 100 125 150

AMBIENT TEMPERATURE:Ta(℃)

Sin(θ＝180)

Io

t

VR

D=t/T
VR=40V

T Tj=150℃

Derating Curveﾞ(Io-Ta)

0.20

DC

0.15

D=1/2

0.10

0A

0V

0.05

AVERAGE RECTIFIED

FORWARD CURRENT:Io(A)

0.00

t

D=t/T

VR=40V
Tj=150℃

T

0 25 50 75 100 125 150

CASE TEMPARATURE:Tc(℃)

Derating Curveﾞ(Io-Tc)

Sin(θ＝180)

Io

VR

20

15

AVE:9.4kV

10

ELECTROSTATIC

DDISCHARGE TEST ESD(KV)

AVE:2.4kV

5

0

C=200pF

R=0Ω

ESD DISPERSION MAP

C=100pF
R=1.5kΩ

Rev.C 3/3

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0