ROHM 1SS244 Datasheet
Diodes
Switching diode
1SS244
1SS244
Applications
!
High voltage switching
General purpose rectification
Features
!
1) Glass sealed envelope. (MSD)
RM
2) V
=250V guaranteed.
3) High reliability.
Construction
!
Silicon epitaxial planar
Absolute maximum ratings
!!!!
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Power dissipation
Junction temperature
Storage temperature
Symbol Limits Unit
V
I
External dimensions
!!!!
ROHM : MSD
EIAJ : −
JEDEC : DO-34
(Ta=25°C)
RM
R
V
FM
I
I
O
surge
P 300 mW
j
T
T
stg
250 V
220 V
625 mA
200 mA
1000 mA
175 ˚C
−65~+175
(Units : mm)
CATHODE BAND (BLACK)
29.0±1.0
˚C
2.7±0.3
29.0±1.0
φ0.4±0.1
φ1.8±0.2
Electrical characteristics
!!!!
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
(Ta=25°C)
V
R
I
C
rr
t
µA
I
F
=200mA
R
=0V, f=1MHz
F
=20mA, IR=20mA, RL=50Ω
I
F
T
−−1.5 V
−−10 VR=220V
−−3pFV
−−75 ns
Diodes
Electrical characteristics curves
!!!!
200
100
50
20
10
5
2
1
FORWARD CURRENT : IF (mA)
Ta=125˚C
0.5
0.2
75˚C
25˚C
−25˚C
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
(Ta=25°C)
10µ
(A)
R
1µ
100n
REVERSE CURRENT : I
10n
0
100˚C
75˚C
50˚C
Ta=25˚C
50 100 150 200 250 300 350
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
1SS244
1.1
(pF)
T
1.0
0.9
0.8
0.7
0.6
012345
CAPACITANCE BETWEEN TERMINALS : C
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between
terminals characteristics
140
(ns)
120
rr
100
80
60
40
20
REVERSE RECOVERY TIME : t
0
0
5 101520253035
FORWARD CURRENT : IF (mA)
Fig.4 Reverse recovery time
characteristics
0.01µF
PULSE GENERATOR
OUTPUT 50Ω
5kΩ
R
I
rr
I
D.U.T.
=10mA
=1mA
50
Ω
14
12
(A)
10
surge
8
6
4
SURGE CURRENT : I
2
0
Fig.5 Surge current characteristics
SAMPLING
OSCILLOSCOPE
Fig.6 Reverse recovery time (trr) measurement circuit
1 10 100 1000
PULSE WIDTH : Tw (ms)
Loading...