ROHM 1SS133 Datasheet
Diodes
Switching diode
1SS133
Applications
!
High speed switching
Features
!
1) Glass sealed envelope. (MSD)
2) High speed. (t
3) High reliability.
Construction
!
Silicon epitaxial planar
rr
=1.2ns Typ.)
External dimensions
!!!!
29.0±1.0
ROHM : MSD
EIAJ : −
JEDEC : DO-34
(Units : mm)
CATHODE BAND (YELLOW)
2.7±0.3
29.0±1.0
1SS133
φ0.4±0.1
φ1.8±0.2
Absolute maximum ratings
!!!!
Parameter Symbol Limits Unit
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s) I
Power dissipation
Junction temperature
Storage temperature
Electrical characteristics
!!!!
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
(Ta=25°C)
V
RM
V
R
I
FM
O
I
surge
PmW300
Tj
Tstg
−65
(Ta=25°C)
V
I
R
C
rr
t
F
T
90
80
400
130
175
~
+175
V
V
mA
mA
mA600
°C
°C
−−1.2
−−0.5 V
−−2
−−4
VI
F
=
µA
pF V
ns
R
=
R
=
R
=
V
100mA
80V
0.5V, f=1MHz
6V, I
F
=
10mA, R
L
=
50Ω
Diodes
Electrical characteristics curves
!!!!
100
50
(mA)
20
F
10
5
2
1
0.5
FORWARD CURRENT : I
0.2
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE : VF (V)
Fig. 1 Forward characteristics
˚C
Ta=125˚C
Ta=75
Ta=25
˚C
˚C
Ta=−25
(Ta=25°C)
3000
(nA)
1000
R
300
100
30
10
REVERSE CURRENT : I
3
0
100˚C
70˚C
50˚C
Ta=25˚C
20 40 60 80 100 120
REVERSE VOLTAGE : VR (V)
Fig. 2 Reverse characteristics
3.0
(pF)
T
2.5
2.0
1.5
1.0
0.5
0
CAPACITANCE BETWEEN TERMINALS : C
0
10 20 30
51525
REVERSE VOLTAGE : V
Fig. 3 Capacitance between
terminals characteristics
1SS133
f=1MHz
R (V)
3
(ns)
rr
2
1
REVERSE RECOVERY TIME : t
0
0
10 20 30
FORWARD CURRENT : IF (mA)
Fig. 4 Reverse recovery time
V
R=6V
rr
=1/10I
I
R
10
5
(A)
surge
2
1
0.5
SURGE CURRENT : I
0.2
0.1
0.01 0.1 1 10 100 1000
Fig.5 Surge current characteristics
characteristics
PULSE GENERATOR
OUTPUT 50Ω
0.01µF
5kΩ
D.U.T.
SAMPLING
50
Ω
OSCILLOSCOPE
Fig. 6 Reverse recovery time (trr) measurement circuit
PULSE
Single pulse
PULSE WIDTH : Tw (ms)
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