ROHM 1N914B, 1N4448, 1N4150, 1N4148 Datasheet

1N4148 / 1N4150 / 1N4448 / 1N914B

Diodes

Switching diode

1N4148 / 1N4150 / 1N4448 / 1N914B

∗

This product is available only outside of Japan.

External dimensions

Applications

!!!!

High-speed switching

Features

!!!!

1) Glass sealed envelope. (GSD)

2) High speed.

3) High reliability.

Construction

!!!!

Silicon epitaxial planar

!!!!

C

29

±1 29±1

ROHM : GSD
EIAJ : −
JEDEC : DO-35

(Units : mm)

CATHODE BAND (BLACK)

Type No.

3.8±0.2

φ 0.5±0.1

A

φ 1.8±0.2

Absolute maximum ratings

!!!!

V

Type

1N4148 100
1N4150 50

1N4448

(1N914B)

Electrical characteristics

!!!!

Type

0.1mA

1N4148

1N4150

1N4448

(IN914B)

The upper figure is the minimum VF and the lower figure is the maximum VF value.

RM

(V)

100

@

0.25mA@1mA@2mA@5mA@10mA@20mA@30mA@50mA@100mA@200mA@250mA

0.54

0.62

(Ta = 25°C)

V

(V)

75
50 600 200 250 4 500 200
75 450 150 200 2 500 200

I

R

FM

(mA)

450

I

O

(mA)

150

I

F

(mA)

200

(Ta = 25°C)

1.0

0.62

0.66

0.74

0.72

0.76

0.86

0.82

0.92

FSM

I
1µs

(A)

2

0.87

1.0

1.0

P

(mW)

500

@

@

5µA

75 100 50.0 20 4 4

− 50 0.1 50 100.0 50 2.5 4

− 100 50.0 20 4 4

@

100µA

Tj

°C

(

200

0.025

0.025

)

@25

°C

V

5.02075

5.02075

Topr

(°C)

°C

@150

V

R

R

(V)

(V)

−65

−65

−65

V

R

=0

f=1MHz

Tstg
(°C)

~
~
~

+200−65~+200
+200−65~+200
+200−65~+200

I

F

R

rr

(ns)Cr (pF)IR (µA) Max.BV (V) Min.VF (V)

t
V

R

=6V

=10mA

L

=100Ω

Diodes

Electrical characteristic curves

!!!!

100

50

20

(mA)

F

10

5

2
1

0.5

FORWARD CURRENT : I

0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Fig. 1 Forward characteristics

°C

°C

°C

°C

Ta=25

Ta=75

Ta=125

Ta=−25

FORWARD VOLTAGE : V

F

(V)

(Ta = 25°C)

3000

nA)

(

1000

R

REVERSE CURRENT : I

1N4148 / 1N4150 / 1N4448 / 1N914B

100°C

70°C

300

100

30

10

3

0 20 40 60 80 100 120

REVERSE VOLTAGE : V

Fig. 2 Reverse characteristics

50°C

Ta=25°C

R

(

V)

3.0

pF)

(

T

2.5

2.0

1.5

1.0

0.5

CAPACITANCE BETWEEN TERMINALS : C

0

0

10 20 30

51525

REVERSE VOLTAGE : VR (V)

Fig. 3 Capacitance between

terminals characteristics

f=1MHz

3

ns)

(

2

1

REVERSE RECOVERY TIME : trr

0

0

10 20 30

FORWARD CURRENT : I

Fig. 4 Reverse recovery time

characteristics

0.01µF

PULSE GENERATOR

OUTPUT 50Ω

INPUT

5Ω

V
I

rr

F

R

=

6V

=

1/10I

(

mA)

D.U.T.

R

100

A)

surge (

SURGE CURRENT : I

SAMPLING

50Ω

OSCILLOSCOPE

50

20

10

5

2

1

0.1 1 10 100 1000 10000
PULSE WIDTH : Tw (ms)

PULSE
Single pulse

Fig. 5 Surge current characteristics

100ns

OUTPUT

t

rr

0

R

I

R

0.1I

Fig. 6 Reverse recovery time (trr) measurement circuit