RICOH R3200x Technical data

R3200x SERIES

RESET TIMER IC FOR MOBILE EQUIPMENTS

NO.EA-280-120328

OUTLINE

The R3200x Series are reset timer ICs with two input signals for mobile equipments which require long interval for reset sequence. The long interval prevents unexpected resets caused by accidental key operations. Internally, each of these ICs consist of a delay generator circuit and output driver transistors.

The R3200x Series have two active-low input pins (SR0 and SR1) which generate reset signals after output delay time when both input pins are activated at the same time.

R3200x Series has two versions that are different in output delay time settings and output release method.

-R3200x001x : Output delay time selectable (7.5s or 11.25s) by connecting DSR pin to either GND or VDD.

The reset signal will be canceled if either of the input pin becomes “H”. Until either input pin becomes “H”, the reset signal will be continually outputted.

-R3200x002x : Output delay time is fixed at 7.5s. After the reset signal is being output 0.234s, it will be

released automatically or if either of the input pin becomes “H”, the reset signal will be canceled.

While the reset signals are remaining active or being sent out, the ICs provide ultra-low supply current. The R3200x Series are available in DFN(PLP)2020-8B and DFN1216-8 packages.

FEATURES

• Supply Current 1 (at standby) ...............................................

Typ. 0.28μA (VDD=5.5V)

• Supply Current 2 (at active before reset signal output) ........

Typ. 3μA (VDD=5.5V) *

• Supply Current 3 (at active after reset signal output) ...........

Typ. 0.45μA (VDD=5.5V)

Operating Voltage Range......................................................

1.65V to 5.5V

Operating Temperature Range .............................................

−40 to 85 °C

Output Delay Time (R3200x001x) ........................................

Typ. 7.5s or 11.25s Selectable

 

(R3200x002x).........................................

Typ. 7.5s

• Output Delay Time Accuracy.................................................

±20%

Output Release Time (R3200x002x) ....................................

Typ. 0.234s

• Output Release Time Accuracy (R3200x002x).....................

±20% (Min. 0.187s, Max. 0.282s)

Output Types.........................................................................

Nch Open Drain and CMOS

Packages ..............................................................................

DFN(PLP)2020-8B,

 

 

DFN1216-8

) Guaranteed by design engineering.

APPLICATIONS

Mobile phone, Smartphone

E-book, Tablet devices

Portable Games

Personal Navigation Devices

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RICOH R3200x Technical data

R3200x

BLOCK DIAGRAMS

R3200xxxxA

R3200xxxxB

SR0 Reset

Logic

SR1

Delay

Logic

 

 

 

 

 

 

 

 

 

DSR

 

 

 

Delay Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OSC

 

 

 

Selector

 

 

 

 

 

 

 

 

 

 

 

VDD

SR0

Reset

 

 

 

Logic

 

 

SR1

 

Delay

RST

 

 

 

 

Logic

 

 

 

GND

DSR

Delay Time

OSC

Selector

 

 

 

 

 

VDD

RST2

RST

GND

) The red block part exists only in R3200x001x.

SELECTION GUIDE

The combination of output delay time settings and output release method, the package type and the output type for the ICs can be selected at the users’ request.

Product Name

Package

Quantity per Reel

Pb Free

Halogen Free

R3200Kxxx -TR

DFN(PLP)2020-8B

5,000 pcs

Yes

Yes

R3200Lxxx -E2

DFN1216-8

5,000 pcs

Yes

Yes

xxx: The combination of output delay time settings and output release method can be designated by serial numbers. (from 001)

(001) The output delay time of the reset signals selectable from 7.5s or 11.25s.

The reset signal will be canceled if either of the input pin becomes “H”. Until either input pin becomes “H”, the reset signal will be continually outputted.

(002) The output delay time of the reset signals is fixed at 7.5s. After reset signal is being output 0.234s, it will be released automatically or if either of the input pin becomes “H”, the reset signal will be canceled.

: Designation of Output Type

(A)Nch Open Drain

(B)Nch Open Drain and CMOS

2

R3200x

PIN CONFIGURATIONS

DFN(PLP)2020-8B

DFN1216-8

Top View

8 7 6 5

1 2 3 4

Bottom View

5

6

7

8

 

1

 

 

4

3

2

1

Top View

8 7 6 5

1 2 3 4

Bottom View

5

6

7

8

1

 

 

 

4

3

2

1

) Tab is GND level. (They are connected to the reverse side of this IC.)

The tab is better to be connected to the GND, but leaving it open is also acceptable

PIN DESCRIPTIONS

DFN(PLP)2020-8B, DFN1216-8

Pin No.

Symbol

 

Description

 

1

 

 

NC

 

No Connection (Only for A version)

 

 

 

 

 

 

 

RST2

 

CMOS Output Pin, "H" Active (Only for B version)

 

 

 

 

 

 

 

 

 

 

2

GND

 

Ground Pin

 

 

 

 

 

 

 

2nd Reset Input Pin, ("L" Active) *1

3

 

 

 

 

 

SR1

 

 

 

 

 

 

 

 

Nch Open Drain Output Pin, ("L" Active) *2

4

 

 

 

 

RST

 

 

 

 

 

 

 

 

 

 

5

 

DSR

 

Output Delay Time Selection Pin (R3200x001x) (GND: 7.5s, VDD: 11.25s) *3

 

 

 

 

 

 

 

TEST2

 

Test Pin *4 (R3200x002x)

 

 

 

 

 

 

 

 

 

 

6

TEST

 

Test Pin *4

 

 

 

 

 

 

 

 

7

 

 

 

 

1st Reset Input Pin, ("L" Active) *1

 

 

SR0

 

 

 

 

 

 

 

 

 

 

8

 

 

VDD

 

Power Supply Input Pin

 

 

 

 

 

 

 

 

1) In the case of using one "L" active input signal pin, either SR0 or SR1 must be connected to GND.2) In the case of using B version without RST, RST must be connected to GND or left open.

3) DSR pin must be connected to either GND or VDD.4) TEST must be connected to GND.

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R3200x

ABSOLUTE MAXIMUM RATINGS

Symbol

Item

Rating

Unit

VDD

Supply Voltage

GND-0.3 to 6

V

 

 

 

 

VSR0

Input Voltage (1st Reset input pin)

GND-0.3 to 6

V

 

 

 

 

VSR1

Input Voltage (2nd Reset input pin)

GND-0.3 to 6

V

 

 

 

 

VRST

Output Voltage (1st Reset output pin)

GND-0.3 to 6

V

 

 

 

 

VRST2

Output Voltage (2nd Reset output pin)

GND-0.3 to VDD+0.3

V

 

 

 

 

VDSR

Input Voltage (Output Delay Time Selection Pin) (only R3200x001x)

GND-0.3 to 6

V

 

 

 

 

IOUT

Output Current

20

mA

 

 

 

 

PD

Power Dissipation (DFN(PLP)2020-8B)

880

mW

Power Dissipation (DFN1216-8)

625

 

 

Topt

Operating Temperature Range

−40 to 85

°C

 

 

 

 

Tstg

Storage Temperature Range

−55 to 125

°C

 

 

 

 

) For Power Dissipation, please refer to PACKAGE INFORMATION.

ABSOLUTE MAXIMUM RATINGS

Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured.

4

R3200x

ELECTRICAL CHARACTERISTICS

R3200x001x

The specification in is checked and guaranteed by design engineering at −40°C ≤ Topt ≤ 85°C.

Topt=25°C

Symbol

 

 

 

 

 

Item

Conditions

 

Min.

Typ.

 

Max.

Unit

VDD

Operating Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.65

 

 

 

5.5

V

 

 

 

 

 

 

 

 

 

 

 

 

ISS1

Supply Current1

VDD=5.5V, at standby

 

 

 

 

 

0.28

 

 

 

 

 

μA

 

 

 

 

 

 

1.35

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD=5.5V,

 

 

 

 

 

 

 

 

 

 

 

 

 

ISS2

Supply Current2

 

 

 

 

 

 

3.0

 

 

6.5

 

μA

at active before reset signal output

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD=5.5V,

 

 

 

 

 

 

 

 

 

 

 

 

 

ISS3

Supply Current3

 

 

 

 

 

 

0.45

 

 

1.7

 

μA

at active after reset signal output

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD ≥ 4.5V

IOL=8mA

 

 

 

 

 

 

 

 

 

 

 

 

VOL

"L" Output Voltage

 

 

 

 

 

 

 

 

 

 

 

 

V

VDD ≥ 3.3V

IOL=5mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD ≥ 1.65V

IOL=3mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD ≥ 4.5V

IOH=5mA

 

 

 

 

 

 

 

 

 

 

 

 

 

"H" Output Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

VDD ≥ 3.3V

 

 

 

 

 

 

 

 

 

 

 

 

V

IOH=2.5mA

VDD x 0.85

 

 

 

 

 

 

(Only for B version)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD ≥ 1.65V

IOH=0.8mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ILEAKI

 

 

 

 

VDD = 5.5V

 

 

 

 

 

 

 

 

 

 

 

 

μA

 

SR0

,

 

SR1

Input Leakage Current

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ILEAKO

Output Leakage Current

VDD = 5.5V

 

 

 

 

 

 

 

 

 

 

 

 

μA

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DSR=GND

 

 

 

 

 

7.5

 

 

 

 

s

tDELAY

Output Delay Time

 

6

 

 

 

9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DSR=VDD

 

 

 

 

 

 

11.25

 

 

 

 

 

s

 

 

 

 

 

 

 

 

 

9

 

 

 

13.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

SR0

,

 

SR1

"L" Input Voltaget

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

SR0

,

 

SR1

"H" Input Voltaget

 

 

0.85

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

All of units are tested and specified under load conditions such that Tj≈Topt=25°C except for Supply Current2.

RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)

All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.

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