RICOH R3132x, R3133x Technical data

R3132x/R3133x SERIES

LOW VOLTAGE DETECTOR WITH BUILT-IN DELAY CIRCUIT

NO.EA-093-120404

Notice

R3133Q Series scheduled to be discontinued (be sold to limited customer): "Limited"

OUTLINE

R3132x/R3133x Series are CMOS-based low voltage detector ICs with built-in delay circuit, high detector threshold accuracy, and ultra low supply current, which can operate at low voltage.

These ICs can be used as system reset generators, and each of these ICs consists of a voltage reference, a comparator, resistors for setting voltage detector threshold, an output driver transistor, manual reset circuit, and an output delay generator.

Detector threshold is fixed internally with high accuracy and requires no adjustment. When a supply voltage crosses a setting detector threshold voltage from a high value to a lower value, this IC generates reset signal.

R3132x Series output “L” at its detect, while R3133x Series output “H”.

Since each of R3132x/R3133x Series embeds an output delay generator, during a setting 240ms delay time, which is fixed in the IC, this IC keeps the reset condition after they are released. Released conditions are the case when a supply voltage crosses a setting detector threshold voltage from a low value to a higher value, or when this IC is released from manual reset.

Two output types, Nch open drain type and CMOS type, are available.

Since the package for these ICs are ultra small SC-82AB package and SON1612-6, high density mounting of the ICs on board is possible.

FEATURES

• Supply current.......................................................................

Typ. 0.8μA (R313xx27x: VDD=3.0V)

Operating Voltage Range......................................................

0.8V to 6.0V (Topt=25°C)

Detector Threshold................................................................

Setting with a step of 0.1V in the range of 1.0V

 

 

to 5.0V is possible. Further, 2.32V, 2.63V, 2.93V,

 

 

3.08V, 4.38V, and 4.63V can be provided as

 

 

standard.

Embedded Power on Reset Delay Time Circuit....................

Typ. 240ms

• Detector Threshold Accuracy................................................

±2.0%

• Released Delay Time Accuracy ............................................

±15.0%

Temperature-Drift Coefficient of Detector Threshold ............

Typ. ±100ppm/°C

Output Types.........................................................................

Nch Open Drain and CMOS

Packages ..............................................................................

SC-82AB, SON1612-6

APPLICATIONS

CPU and Logic Circuit Reset

Battery Checker

Window Comparator

Wave Shaping Circuit

Battery Back-up Circuit

Power Failure Detector

1

RICOH R3132x, R3133x Technical data

R3132x/R3133x

BLOCK DIAGRAMS

R3132xxxEA Nch Open Drain Output R3132xxxEC CMOS Output

VDD

-

Delay

 

+

Circuit

 

Vref

GND

MR

VDD

MR

 

-

Delay

OUT

 

 

OUT

+

Circuit

 

 

 

 

Vref

 

 

 

GND

 

 

R3133xxxEA Nch Open Drain Output

R3133xxxEC CMOS Output

VDD

-

Delay

 

+

Circuit

 

Vref

GND

MR

VDD

 

-

VOUT

+

 

Vref

 

GND

 

MR

Delay

OUT

Circuit

 

2

R3132x/R3133x

SELECTION GUIDE

The package type, the detector threshold, the output type and the taping type for the ICs can be selected at the users’ request.

Product Name

Package

Quantity per Reel

 

Pb Free

Halogen Free

R3132DxxE (y)-TR-FE

SON1612-6

4,000 pcs

 

Yes

Yes

R3133DxxE (y)-TR-FE

 

 

 

 

 

 

R3132QxxE (y)-TR-FE

SC-82AB

3,000 pcs

 

Yes

Yes

R3133QxxE (y)-TR-FE (Limited)

 

 

 

 

 

 

xx: The detector threshold can be designated in the range from 1.0V(10) to 5.0V(50) in 0.1V steps.

y: If the detector threshold includes the 3rd digit, indicate the digit of 0.01V.

 

 

(2.32V, 2.63V, 2.93V, 3.08V, 4.38V, 4.63V)

 

 

 

 

Ex. If the detector threshold is 2.63V, R3132x26E 3-TR-FE.

 

 

: Designation of Output Type

 

 

 

 

 

(A) Nch Open Drain

 

 

 

 

 

(C) CMOS

 

 

 

 

 

 

 

 

 

 

 

3

R3132x/R3133x

PIN CONFIGURATIONS

SON1612-6

SC-82AB

 

6

 

5

 

4

 

4

3

(mark side)

(mark side)

1 2 3 1 2

PIN DESCRIPTIONS

SON1612-6

Pin No

Symbol

Pin Description

 

 

 

1

VDD

Input Pin

 

 

 

2

GND

Ground Pin

 

 

 

3

MR

Manual Reset Input Pin

Active at “L” input. Pulled up via 1MΩ. If MR pin is not necessary,

 

 

open this node, or connect to VDD.

4

OUT

Output Pin

R3132D Series:"L" at detection

 

 

R3133D Series:"H" at detection

5

GND

Ground Pin

 

 

 

6

NC

No Connection

 

 

 

SC-82AB

Pin No

Symbol

Pin Description

 

 

 

1

GND

Ground Pin

 

 

 

2

OUT

Output Pin

R3132Q Series :"L" at detection

 

 

R3133Q Series (Limited) :"H" at detection

3

MR

Manual Reset Input Pin

Active at "L" input. Pulled up via 1MΩ. If MR pin is not necessary,

 

 

open this node, or connect to VDD.

4

VDD

Input Pin

 

 

 

4

 

 

 

R3132x/R3133x

ABSOLUTE MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

Symbol

Item

Rating

 

Unit

 

VDD

Supply Voltage

6.5

 

V

 

 

 

 

 

 

 

VOUT

Output Voltage (Nch Open Drain Output)

VSS−0.3 to 6.5

 

V

 

Output Voltage (CMOS Output)

VSS−0.3 to VDD+0.3

 

 

 

 

 

 

VMR

Input Voltage

VSS−0.3 to VDD+0.3

 

V

 

IOUT

Output Current

20

 

mA

 

 

 

 

 

 

 

PD

Power Dissipation (SON1612-6) 1, 2

500

 

mW

 

Power Dissipation (SC-82AB) 2

380

 

 

 

 

 

 

Topt

Operating Temperature Range

−40 to 85

 

°C

 

 

 

 

 

 

 

Tstg

Storage Temperature Range

−55 to 125

 

°C

 

 

 

 

 

 

Tsolder

Soldering Temperature

260°C, 10s

 

 

 

 

 

 

 

1) This specification is at mounted on board.

PD depends on conditions of mounting on board. This specification is based on the measurement at the condition below:

Measurement Conditions

Environment: Mounted on board (Wind velocity 0m/s) Board Material: FR-4 (2-layer)

Board dimensions : 40mm x 40mm x t1.6mm Copper Area : 50%

2) For Power Dissipation, please refer to PACKAGE INFORMATION.

ABSOLUTE MAXIMUM RATINGS

Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured.

5

R3132x/R3133x

ELECTRICAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Topt=25°C

Symbol

Item

 

Test Conditions

Min.

Typ.

Max.

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R3132

 

Topt=25°C

0.75

 

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD

Operating Voltage

 

−40°C≤Topt≤85°C

0.85

 

6.0

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R3133

 

Topt=25°C

0.80

 

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−40°C≤Topt≤85°C

0.90

 

6.0

 

 

 

 

 

 

 

 

 

 

 

VDET

Detector Threshold

 

 

 

 

 

VDET×

 

VDET×

 

V

 

 

 

 

 

0.98

 

1.02

 

 

 

 

 

 

 

 

 

 

 

 

ISS1

Supply Current1

VDD=VDET−0.1V, IOUT=0A

 

 

2.0

 

μA

ISS2

Supply Current2

VDD=VDET+0.1V, IOUT=0A

 

 

2.0

 

μA

 

 

 

VDD=6.0V,

VDET<1.6V

 

 

3.6

 

 

ISS3

Supply Current3

 

 

 

 

 

 

μA

1.6V≤VDET<2.7V

 

 

3.0

 

IOUT=0A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.7V≤VDET

 

 

2.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

“H” Output Voltage

 

 

 

 

Refer to the following table.

 

 

 

 

 

 

 

 

 

 

 

 

 

VOL

“L” Output Voltage

 

 

 

 

Refer to the following table.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RMR

MR pin pull-up

Topt=25°C

 

 

0.5

1.0

4.0

 

resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Trst

 

Output Delay Time for

DD=

DET

DET

0.1V

 

15

 

 

μ

 

detect

V

V to V

 

 

 

 

 

s

 

 

 

 

 

 

 

 

 

 

 

 

Tdelay

Output Delay Time for

VDD=0.8V to VDET+1.0V

204

240

276

 

ms

release

 

 

 

 

 

 

 

 

 

 

 

 

 

VDET/

Detector Threshold

−40°C≤Topt≤85°C

 

±100

 

 

ppm/

Topt

Temperature Coefficient

 

 

 

°C

) Guaranteed by design, not mass production tested.

RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)

All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.

6

R3132x/R3133x

"H" Output Voltage (VOH) table

 

 

 

 

 

 

Topt=25°C

Products

Test Conditions

Min.

Typ.

Max.

 

Unit

 

VDET<1.2V

VDD=VDET+0.1V, IOH=−50μA

 

 

 

 

 

 

 

 

 

 

 

 

 

R3132xxxEC

1.2V≤VDET<2.0V

VDD=VDET+0.1V, IOH=−150μA

0.8×VDD

 

 

 

V

 

 

 

 

 

2.0V≤VDET<3.1V

VDD=VDET+0.1V, IOH=−500μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.1V≤VDET

VDD=VDET+0.1V, IOH=−800μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDET<1.2V

VDD=VDET−0.1V, IOH=−10μA

 

 

 

 

 

 

 

 

 

 

 

 

 

R3133xxxEC

1.2V≤VDET<2.0V

VDD=VDET−0.1V, IOH=−100μA

0.8×VDD

 

 

 

V

 

 

 

 

 

2.0V≤VDET<3.1V

VDD=VDET−0.1V, IOH=−500μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.1V≤VDET

VDD=VDET−0.1V, IOH=−800μA

 

 

 

 

 

 

 

 

 

 

 

 

 

VDET is a set value.

"L" Output Voltage (VOL) table

 

 

 

 

 

 

 

 

Topt=25°C

Symbol

Item

Test Conditions

Min.

Typ.

Max.

 

Unit

 

 

 

 

 

 

 

 

 

VDET<1.2V

VDD=VDET−0.1V, IOL=20μA

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

V

R3132xxxEx

1.2V≤V

DET

<1.6V

VDD=VDET−0.1V, IOL=750μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.6V≤VDET<3.1V

VDD=VDET−0.1V, IOL=1.2mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.1V≤VDET

VDD=VDET−0.1V, IOL=3.2mA

 

 

0.4

 

V

 

 

 

 

 

 

 

 

 

VDET<1.2V

VDD=VDET+0.1V, IOL=20μA

 

 

 

 

 

R3133xxxEx

1.2V≤V

DET

<1.6V

VDD=VDET+0.1V, IOL=750μA

 

 

0.3

 

V

 

 

 

 

 

 

1.6V≤VDET<3.1V

VDD=VDET+0.1V, IOL=1.2mA

 

 

 

 

 

 

 

 

 

 

 

 

3.1V≤VDET

VDD=VDET+0.1V, IOL=3.2mA

 

 

0.4

 

V

VDET is a set value.

7

R3132x/R3133x

DETECTOR THRESHOLD SPECIFICATIONS BY PART NUMBER

R3132x

 

 

Operating Voltage

 

Detector Threshold

Supply Current 1

Part Number

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD[V]

 

 

VDET[V]

 

ISS1[μA]

 

Conditions

Min.

 

Conditions

Min.

Min.

Typ.

Max.

Conditions

Typ.

Max.

R3132x23Ex2

 

 

 

 

 

2.274

2.320

2.366

 

0.8

 

R3132x26Ex3

 

 

 

 

 

2.578

2.630

2.682

 

 

 

 

 

 

 

 

 

 

R3132x29Ex3

Topt=25°C

0.75

 

−40°C≤Topt≤85°C

0.85

2.872

2.930

2.988

VDD=VDET−0.1V

 

2.0

R3132x30Ex8

 

3.019

3.080

3.141

IOUT=0A

0.9

 

 

 

 

 

 

R3132x43Ex8

 

 

 

 

 

4.293

4.380

4.467

 

 

 

 

 

 

 

 

 

 

R3132x46Ex3

 

 

 

 

 

4.538

4.630

4.722

 

 

 

R3132x10Ex

 

 

 

 

 

0.980

1.000

1.020

 

 

 

R3132x11Ex

 

 

 

 

 

1.078

1.100

1.122

 

 

 

R3132x12Ex

 

 

 

 

 

1.176

1.200

1.224

 

 

 

R3132x13Ex

 

 

 

 

 

1.274

1.300

1.326

 

 

 

R3132x14Ex

 

 

 

 

 

1.372

1.400

1.428

 

 

 

R3132x15Ex

 

 

 

 

 

1.470

1.500

1.530

 

 

 

R3132x16Ex

 

 

 

 

 

1.568

1.600

1.632

 

 

 

R3132x17Ex

 

 

 

 

 

1.666

1.700

1.734

 

 

 

R3132x18Ex

 

 

 

 

 

1.764

1.800

1.836

 

0.8

 

R3132x19Ex

 

 

 

 

 

1.862

1.900

1.938

 

 

 

R3132x20Ex

 

 

 

 

 

1.960

2.000

2.040

 

 

 

R3132x21Ex

 

 

 

 

 

2.058

2.100

2.142

 

 

 

R3132x22Ex

 

 

 

 

 

2.156

2.200

2.244

 

 

 

R3132x23Ex

 

 

 

 

 

2.254

2.300

2.346

 

 

 

R3132x24Ex

 

 

 

 

 

2.352

2.400

2.448

 

 

 

R3132x25Ex

 

 

 

 

 

2.450

2.500

2.550

 

 

 

R3132x26Ex

 

 

 

 

 

2.548

2.600

2.652

 

 

 

R3132x27Ex

 

 

 

 

 

2.646

2.700

2.754

 

 

 

R3132x28Ex

 

 

 

 

 

2.744

2.800

2.856

 

 

 

R3132x29Ex

 

 

 

 

 

2.842

2.900

2.958

VDD=VDET−0.1V

 

 

R3132x30Ex

Topt=25°C

0.75

 

−40°C≤Topt≤85°C

0.85

2.940

3.000

3.060

 

2.0

 

IOUT=0A

 

R3132x31Ex

 

 

 

 

 

3.038

3.100

3.162

 

 

 

 

 

 

 

 

 

 

R3132x32Ex

 

 

 

 

 

3.136

3.200

3.264

 

 

 

R3132x33Ex

 

 

 

 

 

3.234

3.300

3.366

 

 

 

R3132x34Ex

 

 

 

 

 

3.332

3.400

3.468

 

 

 

R3132x35Ex

 

 

 

 

 

3.430

3.500

3.570

 

 

 

R3132x36Ex

 

 

 

 

 

3.528

3.600

3.672

 

 

 

R3132x37Ex

 

 

 

 

 

3.626

3.700

3.774

 

 

 

R3132x38Ex

 

 

 

 

 

3.724

3.800

3.876

 

0.9

 

R3132x39Ex

 

 

 

 

 

3.822

3.900

3.978

 

 

 

 

 

 

 

 

 

 

R3132x40Ex

 

 

 

 

 

3.920

4.000

4.080

 

 

 

R3132x41Ex

 

 

 

 

 

4.018

4.100

4.182

 

 

 

R3132x42Ex

 

 

 

 

 

4.116

4.200

4.284

 

 

 

R3132x43Ex

 

 

 

 

 

4.214

4.300

4.386

 

 

 

R3132x44Ex

 

 

 

 

 

4.312

4.400

4.488

 

 

 

R3132x45Ex

 

 

 

 

 

4.410

4.500

4.590

 

 

 

R3132x46Ex

 

 

 

 

 

4.508

4.600

4.692

 

 

 

R3132x47Ex

 

 

 

 

 

4.606

4.700

4.794

 

 

 

R3132x48Ex

 

 

 

 

 

4.704

4.800

4.896

 

 

 

R3132x49Ex

 

 

 

 

 

4.802

4.900

4.998

 

 

 

R3132x50Ex

 

 

 

 

 

4.900

5.000

5.100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8

R3132x/R3133x

Supply Current 2

 

Supply Current 3

 

"H" Output Voltage

 

 

 

 

 

 

 

 

 

 

ISS2[μA]

 

ISS3[μA]

 

VOH[V]

 

 

Conditions

Typ.

Max.

Conditions

Typ.

Max.

Conditions

Min.

 

 

 

 

 

1.2

3.0

VDD=VDET+0.1V

 

 

 

 

 

 

 

 

 

 

VDD=VDET+0.1V

0.8

2.0

VDD=6.0V

 

 

IOH=−500μA

0.8×

 

IOUT=0A

IOUT=0A

 

 

 

VDD

 

 

 

1.0

2.5

 

 

 

 

 

 

VDD=VDET+0.1V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOH=−800μA

 

 

 

 

 

 

 

 

VDD=VDET+0.1V

 

 

 

 

 

 

 

 

IOH=−50μA

 

 

 

 

 

 

 

3.6

 

 

 

 

 

 

 

1.4

 

VDD=VDET+0.1V

 

 

 

 

 

 

 

3.0

IOH=−150μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.2

 

 

 

 

 

 

 

 

 

 

VDD=VDET+0.1V

 

 

 

 

 

 

 

 

IOH=−500μA

 

 

VDD=VDET+0.1V

0.8

2.0

VDD=6.0V

 

 

 

0.8×

 

 

 

 

 

IOUT=0A

IOUT=0A

 

 

 

VDD

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.5

 

 

 

 

 

 

 

 

 

VDD=VDET+0.1V

 

 

 

 

 

 

 

 

IOH=−800μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

9

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