Richtek RT8016-10GQW, RT8016-10PQW, RT8016-12GQW, RT8016-12PQW, RT8016-13GQW Schematic [ru]

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RT8016

1.5MHz, 1A, High Efficiency PWM Step-Down DC/DC Converter

General Description

The RT8016 is a high-efficiency Pulse-Width-Modulated

(PWM) step-down DC-DC converter. Capable of delivering

1A output current over a wide input voltage range from

2.5V to 5.5V, the RT8016 is ideally suited for portable

electronic devices that are powered from 1-cell Li-ion

battery or from other power sources such as cellular

phones, PDAs and hand-held devices.

Two operating modes are available including : PWM/Low-

Dropout autoswitch and shut-down modes, the Internal

synchronous rectifier with low R

dramatically reduces

DS(ON)

conduction loss at PWM mode. No external Schottky

diode is required in practical application.

The RT8016 enters Low-Dropout mode when normal PWM

cannot provide regulated output voltage by continuously

turning on the upper PMOS. The RT8016 enters shut-

down mode and consumes less than 0.1uA when EN pin

is pulled low. The RT8016 also offers a range of 1V to

3.3V with 0.1V per step or adjustable output voltage by

two external resistor.

The switching ripple is easily smoothed-out by small

package filtering elements due to a fixed operating

frequency of 1.5MHz. This along with small WDFN-6L 2x2

package provides small PCB area application. Other

features include soft start, lower internal reference voltage

with 2% accuracy, over temperature protection, and over

current protection.

Pin Configurations

(TOP VIEW)

GND

VIN

WDFN-6L 2x2

FB/VOUT

GND

Features



+2.5V to +5.5V Input Range





 Adjustable Output From 0.6V to V



 1A Output Current



 95% Efficiency



 No Schottky Diode Required



 1.5MHz Fixed Frequency PWM Operation



 Small 6-Lead WDFN Package



 RoHS Compliant and 100% Lead (Pb)-Free



Applications

 Mobile Phones

 Personal Information Appliances

 Wireless and DSL Modems

 MP3 Players

 Portable Instruments

Ordering Information

RT8016-

Package Type QW : WDFN-6L 2x2 (W-Type)

Lead Plating System P : Pb Free G : Green (Halogen Free and Pb Free)

Output Voltage Default : Adjustable 10 : 1.0V 11 : 1.1V : 32 : 3.2V 33 : 3.3V

Note :

Richtek products are :

` RoHS compliant and compatible with the current require-

ments of IPC/JEDEC J-STD-020.

` Suitable for use in SnPb or Pb-free soldering processes.

Marking Information

For marking information, contact our sales representative

directly or through a Richtek distributor located in your

area.

DS8016-04 February 2012 www.richtek.com

RT8016

Typical Application Circuit

2.5V to 5.5V

4.7µF

VIN

RT8016

VOUT

GND

1, 5

2.2µH

Figure 1. Fixed Voltage Regulator

4.7µF

VIN

RT8016

EN FB

GND

1, 5

2.2µH

OUT

10µF

OUT

⎛

⎜

REFOUT

⎝

⎞

1 x VV

⎟

⎠

with R2 = 300kΩ to 60kΩ so the IR2 = 2μA to 10μA,

and (R1 x C1) should be in the range between 3x10

Figure 2. Adjustable Voltage Regulator

Layout Guide

RT8016_FIX

GND

VIN

between V GND as close as possible

Layout note:

1. The distance that C

2. C

should be placed near RT8016.

OUT

VOUT

GND

must be placed

and

connects to VIN is as close as possible (Under 2mm).

Output capacitor must be near RT8016

OUT

LX should be connected to Inductor by wide and short trace, keep sensitive compontents away from this trace

-6

and 6x10

-6

for component selection.

RT8016_ADJ

GND

VIN

CIN must be placed

between V GND as close as possible

and

GND

LX should be connected to Inductor by wide and short trace, keep sensitive compontents away from this trace

Output capacitor must be near RT8016

OUT

Figure 3. Layout Guide for RT8016

DS8016-04 February 2012www.richtek.com

Functional Pin Description

Pin No. Pin Name Pin Function

2 EN Chip Enable (Active High).

3 VIN Power Input.

4 LX Pin for Switching.

1, 5 GND Ground Pin.

6 FB/VOUT Feedback/Output Voltage Pin.

7 (Exposed Pad) NC

No Internal Connection. The exposed pad must be soldered to a large PCB and

connected to GND for maximum power dissipation.

Function Block Diagram

EN VIN

RT8016

FB/VOUT

Slope

Compensation

Error

Amplifier

COMP

OSC &

Shutdown

Control

Current

Sense

PWM

Comparator

UVLO &

Power Good

Detector

RS1

Current

Limit

Detector

Control

Logic

REF

Controller

GND

Driver

Current

Source

Current

Detector

Mux

RS2

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RT8016

Absolute Maximum Ratings (Note 1)

 Supply Input Voltage ------------------------------------------------------------------------------------------------------ 6.5V

 EN, FB Pin Voltage ------------------------------------------------------------------------------------------------------- −0.3V to V

 Power Dissipation, P

@ TA = 25°C

WDFN-6L 2x2 -------------------------------------------------------------------------------------------------------------- 0.606W

 Package Thermal Resistance (Note 2)

WDFN-6L 2x2, θJA--------------------------------------------------------------------------------------------------------- 165°C/W

WDFN-6L 2x2, θJC-------------------------------------------------------------------------------------------------------- 20°C/W

 Lead Temperature (Soldering, 10 sec.)------------------------------------------------------------------------------- 260°C

 Storage Temperature Range -------------------------------------------------------------------------------------------- −65°C to 150°C

 Junction Temperature ----------------------------------------------------------------------------------------------------- 150°C

 ESD Susceptibility (Note 3)

HBM (Human Body Mode) ---------------------------------------------------------------------------------------------- 2kV

MM (Machine Mode) ------------------------------------------------------------------------------------------------------ 200V

Recommended Operating Conditions (Note 4)

 Supply Input Voltage ------------------------------------------------------------------------------------------------------ 2.5V to 5.5V

 Junction Temperature Range --------------------------------------------------------------------------------------------

 Ambient Temperature Range --------------------------------------------------------------------------------------------

−40°C to 125°C

−40°C to 85°C

Electrical Characteristics

= 3.6V, V

Input Voltage Range

Quiescent Current IQ I

Shutdown Current

Reference Voltage

Adjustable Output Range

Output Voltage Acc uracy

FB Input Current

P-MOSFET RON R

N-MOSFET RON R

P-Channel Current Limit

EN High-Level Input Voltage

OUT

= 2.5V, V

= 0.6V, L = 2.2μH, C

REF

= 4.7μF, C

OUT

= 10uF, T

= 25°C, I

= 1A unless otherwise specified)

MAX

Parameter Symbol Test Conditions Min Typ Max Unit

2.5 -- 5.5 V

= 0mA, VFB = V

OUT

EN = GND -- 0.1 1

+ 5% -- 50 70 μA

REF

For Adjustable Output Voltage 0.588 0.600 0.612 V

(Note 6 )

= (V

> 2.5V which ever is larger.

+ ΔV) to 5.5V or

OUT

REF

−3

− 0.2V

-- 3 %

Fix

SHDN

REF

OUT

ΔV

OUT

(Note 5)

Adjustable

ΔV

OUT

DS(ON)_P

DS(ON)_N

LIM_P

EN_H

0A < I

OUT

1.5 --

= V

= 2.5V to 5.5 V

+ ΔV to 5.5V (Note 5)

OUT

OU T

< 1A

−3

= VIN −50

= 200mA

= 3.6V

= 2.5V

= 3.6V

= 2.5V

-- 0.28 --

-- 0.38 --

-- 0.25 --

-- 0.35 --

1.4 2 2.6 A

-- 3 %

-- 50 nA

VIN

DS8016-04 February 2012www.richtek.com

μA

RT8016

Parameter Symbol Test Conditions Min Typ Max Unit

EN Low-Level Input Voltage V

-- -- 0.4 V

EN_L

Under Voltage Lock Out threshold UVLO -- 1.8 -- V

Hyster es i s -- 0.1 -- V

Oscillator Frequency

Thermal Shutdown Temperature

OSC

= 3.6V, I

OU T

= 100mA

-- 160 -- °C

1.2 1.5 1.8 MHz

Max. Duty Cycl e 100 -- -- %

LX Current Source

= 3.6V, V

= 0V or V

= 3.6V

1 -- 100

μA

Minimum On-Time tON -- 120 140 ns

Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in

the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may

affect device reliability.

Note 2. θ

Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Note 5. ΔV = I Note 6. Guarantee by design. Note 7. The start up time is about 300μs.

is measured at T

is on the lead of the package.

of θ

x P

OUT

RDS(ON)

= 25°C on a single-layer and four-layer test board of JEDEC 51. The measurement case position

DS8016-04 February 2012 www.richtek.com

RT8016

Typical Operating Characteristics

Effic iency vs. Output Current

100

Efficiency (%)

0.001 0.01 0.1 1

VIN = 3.6V

VIN = 5V

= 1.2V, C

OUT

= 10uF, L = 2.2H

OUT

Output Current (A)

Output Voltage vs. Temperature

1.25

1.24

1.23

1.22

1.21

1.20

1.19

1.18

Output Voltage (V)

1.17

1.16

1.15

-50 -25 0 25 50 75 100 125

Temperature

VIN = 3.6V, I

(°C)

OUT

= 0A

Output Voltage vs. Output Current

1.220

1.218

Output Voltage (V)

1.216

1.214

1.212

1.210

1.208

1.206

1.204

1.202

1.200 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

VIN = 3.6V

VIN = 5V

Output Current (A)

UVLO Threshold vs . Te m perature

2.1

2.0

1.9

1.8

1.7

1.6

Input Voltage (V)

1.5

1.4

1.3

-50 -25 0 25 50 75 100 125

Rising

Falling

OUT

Temperature

= 1.2V, I

(°C)

OUT

= 0A

EN Threshold vs. Input Voltage

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

EN Voltage (V)

0.7

0.6

0.5

0.4

2.52.83.13.43.7 4 4.34.64.95.25.5

Rising

Falling

OUT

= 1.2V, I

OUT

= 0A

Input Voltage (V)

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

EN Voltage (V)

0.7

0.6

0.5

0.4

EN Threshold vs . Temperature

Rising

Falling

VIN = 3.6V, V

-40 -15 10 35 60 85 110 135

Temperature

= 1.2V, I

OUT

(°C)

DS8016-04 February 2012www.richtek.com

OUT

= 0A

RT8016

Frequency vs. Input Voltage

1.60

1.55

1.50

1.45

1.40

1.35

Frequency (MHz)

1.30

1.25

1.20

VIN = 3.6V, V

2.5 2.8 3.1 3.4 3 .7 4 4.3 4.6 4.9 5.2 5.5

= 1.2V, I

OUT

Input Voltage (V)

Current Limit vs. Input Voltage

2.2

2.1

2.0

1.9

1.8

1.7

1.6

1.5

Output Current (A)

1.4

1.3

1.2

2.5 2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5

Input Voltage (V)

= 300mA

OUT

= 1.2V

Frequency vs. Temperature

1.60

1.55

1.50

1.45

1.40

1.35

Frequency (MHz)

1.30

1.25

1.20

-40 -15 10 35 60 85 110 135

VIN = 3.6V, V

Temperature

= 1.2V, I

OUT

(°C)

Current Limit vs. Temperature

2.2

2.1

2.0

1.9

1.8

1.7

1.6

1.5

Output Current (A)

1.4

1.3

1.2

-40 -15 10 35 60 85 110 135

VIN = 3.6V

Temperature

VIN = 3.3V

(°C)

= 300mA

VIN = 5V

= 1.2V

OUT

Output Ripple Voltage

VIN = 3.6V, V

OUT

(10mV/Div)

(5V/Div)

= 1.2V, I

OUT

Time (500ns/Div)

= 1A

OUT

(10mV/Div)

(5V/Div)

VIN = 5V, V

Output Ripple Voltage

= 1.2V, I

OUT

Time (500ns/Div)

OUT

= 1A

DS8016-04 February 2012 www.richtek.com

RT8016

(2V/Div)

OUT

(1V/Div)

(500mA/Div)

(2V/Div)

VIN = 3.6V, V

VEN = 3.6V, V

Power On from EN

= 1.2V, I

OUT

Time (100μs/Div)

OUT

= 10mA

Power On from VIN

= 1.2V, I

OUT

= 1A

(2V/Div)

OUT

(1V/Div)

(500mA/Div)

(2V/Div)

VIN = 3.6V, V

Power On from EN

= 1.2V, I

OUT

Time (100μs/Div)

OUT

= 1A

Power Off from EN

VIN = 3.6V, V

= 1.2V, I

OUT

= 1A

OUT

(1V/Div)

(500mA/Div)

OUT

(50mV/Div)

OUT

(500mA/Div)

Time (250μs/Div)

Load Transient Response

VIN = 3.6V, V

= 50mA to 1A

OUT

= 1.2V

OUT

(1V/Div)

(500mA/Div)

OUT

(50mV/Div)

OUT

(500mA/Div)

Time (100μs/Div)

Load Transient Response

VIN = 3.6V, V I

= 50mA to 0.5A

OUT

= 1.2V

Time (50μs/Div)

DS8016-04 February 2012www.richtek.com

RT8016

OUT

(50mV/Div)

OUT

(500mA/Div)

Load Transient Response

VIN = 5V, V I

= 50mA to 1A

OUT

= 1.2V

OUT

Time (50μs/Div)

OUT

(50mV/Div)

OUT

(500mA/Div)

Load Transient Response

VIN = 5V, V I

= 50mA to 0.5A

OUT

= 1.2V

OUT

Time (50μs/Div)

DS8016-04 February 2012 www.richtek.com

RT8016

Applications Information

The basic RT8016 application circuit is shown in Typical

Application Circuit. External component selection is

determined by the maximum load current and begins with

the selection of the inductor value and operating frequency

followed by CIN and C

OUT

Inductor Selection

For a given input and output voltage, the inductor value

and operating frequency determine the ripple current. The

ripple current ΔIL increases with higher VIN and decreases

with higher inductance.

ΔI

⎡

⎢

⎣

⎤ ⎥

⎦

⎡

−×

⎢

⎣

⎤

OUTOUT

⎥

⎦

Having a lower ripple current reduces the ESR losses in

the output capacitors and the output voltage ripple. Highest

efficiency operation is achieved at low frequency with small

ripple current. This, however, requires a large inductor.

A reasonable starting point for selecting the ripple current

is ΔIL = 0.4(I

). The largest ripple current occurs at the

MAX

highest VIN. To guarantee that the ripple current stays

below a specified maximum, the inductor value should be

chosen according to the following equation :

⎡

OUT

⎢

Δ×

⎣

L(MAX)

⎤ ⎥

⎦

−×

⎢

IN(MAX)

⎣

OUT

⎤ ⎥

⎦

Inductor Core Selection

Once the value for L is known, the type of inductor must

be selected. High efficiency converters generally cannot

afford the core loss found in low cost powdered iron cores,

forcing the use of more expensive ferrite or mollypermalloy

cores. Actual core loss is independent of core size for a

fixed inductor value but it is very dependent on the

inductance selected. As the inductance increases, core

losses decrease. Unfortunately, increased inductance

requires more turns of wire and therefore copper losses

will increase.

Ferrite designs have very low core losses and are preferred

at high switching frequencies, so design goals can

concentrate on copper loss and preventing saturation.

Ferrite core material saturates “hard”, which means that

inductance collapses abruptly when the peak design

current is exceeded. This results in an abrupt increase in

inductor ripple current and consequent output voltage ripple.

Do not allow the core to saturate!

Different core materials and shapes will change the size/

current and price/current relationship of an inductor.

Toroid or shielded pot cores in ferrite or permalloy materials

are small and don't radiate energy but generally cost more

than powdered iron core inductors with similar

characteristics. The choice of which style inductor to use

mainly depends on the price vs size requirements and

any radiated field/EMI requirements.

CIN and C

Selection

OUT

The input capacitance, CIN, is needed to filter the

trapezoidal current at the source of the top MOSFET. To

prevent large ripple voltage, a low ESR input capacitor

sized for the maximum RMS current should be used. RMS

current is given by :

OUT(MAX)RMS

OUT

This formula has a maximum at VIN = 2V

RMS

= I

/2. This simple worst-case condition is

OUT

−=

OUT

, where

OUT

commonly used for design because even significant

deviations do not offer much relief. Note that ripple current

ratings from capacitor manufacturers are often based on

only 2000 hours of life which makes it advisable to further

derate the capacitor, or choose a capacitor rated at a higher

temperature than required. Several capacitors may also

be paralleled to meet size or height requirements in the

design.

The selection of C

is determined by the effective series

OUT

resistance (ESR) that is required to minimize voltage ripple

and load step transients, as well as the amount of bulk

capacitance that is necessary to ensure that the control

loop is stable. Loop stability can be checked by viewing

the load transient response as described in a later section.

The output ripple, ΔV

⎡

ESR ΔIΔV

LOUT

⎢

⎣

, is determined by :

OUT

⎤

+≤

8fC

OUT

⎥

⎦

DS8016-04 February 2012www.richtek.com

RT8016

The output ripple is highest at maximum input voltage

since ΔIL increases with input voltage. Multiple capacitors

placed in parallel may be needed to meet the ESR and

RMS current handling requirements. Dry tantalum, special

polymer, aluminum electrolytic and ceramic capacitors are

all available in surface mount packages. Special polymer

capacitors offer very low ESR but have lower capacitance

density than other types. Tantalum capacitors have the

highest capacitance density but it is important to only

use types that have been surge tested for use in switching

power supplies. Aluminum electrolytic capacitors have

significantly higher ESR but can be used in cost-sensitive

applications provided that consideration is given to ripple

current ratings and long term reliability. Ceramic capacitors

have excellent low ESR characteristics but can have a

high voltage coefficient and audible piezoelectric effects.

The high Q of ceramic capacitors with trace inductance

can also lead to significant ringing.

Using Ceramic In put and Output Capacitors

Higher values, lower cost ceramic capacitors are now

becoming available in smaller case sizes. Their high ripple

current, high voltage rating and low ESR make them ideal

for switching regulator applications. However, care must

be taken when these capacitors are used at the input and

output. When a ceramic capacitor is used at the input

and the power is supplied by a wall adapter through long

wires, a load step at the output can induce ringing at the

input, VIN. At best, this ringing can couple to the output

and be mistaken as loop instability. At worst, a sudden

inrush of current through the long wires can potentially

cause a voltage spike at VIN large enough to damage the

part.

Output Voltage Programming

The resistive divider allows the FB pin to sense a fraction

of the output voltage as shown in Figure 4.

OUT

RT8016

GND

For adjustable voltage mode, the output voltage is set by

an external resistive divider according to the following

equation :

)

where V

(1VV

REFOUT

is the internal reference voltage (0.6V typ.)

REF

Efficiency Considerations

The efficiency of a switching regulator is equal to the output

power divided by the input power times 100%. It is often

useful to analyze individual losses to determine what is

limiting the efficiency and which change would produce

the most improvement. Efficiency can be expressed as :

Efficiency = 100% − (L1+ L2+ L3+ ...)

where L1, L2, etc. are the individual losses as a percentage

of input power. Although all dissipative elements in the

circuit produce losses, two main sources usually account

for most of the losses : VIN quiescent current and I2R

losses.

The VIN quiescent current loss dominates the efficiency

loss at very low load currents whereas the I2R loss

dominates the efficiency loss at medium to high load

currents. In a typical efficiency plot, the efficiency curve

at very low load currents can be misleading since the

actual power lost is of no consequence.

1. The VIN quiescent current appears due to two factors

including : the DC bias current as given in the electrical

characteristics and the internal main switch and

synchronous switch gate charge currents. The gate charge

current results from switching the gate capacitance of the

internal power MOSFET switches. Each time the gate is

switched from high to low to high again, a packet of charge

ΔQ moves from VIN to ground.

The resulting ΔQ/Δt is the current out of VIN that is typically

larger than the DC bias current. In continuous mode,

GATECHG

= f(QT+QB)

where QT and QB are the gate charges of the internal top

and bottom switches. Both the DC bias and gate charge

losses are proportional to VIN and thus their effects will

be more pronounced at higher supply voltages.

Figure 4. Setting the Output Voltage

DS8016-04 February 2012 www.richtek.com

RT8016

2. I2R losses are calculated from the resistances of the

internal switches, RSW and external inductor RL. In

continuous mode, the average output current flowing

through inductor L is “chopped” between the main switch

and the synchronous switch. Thus, the series resistance

looking into the LX pin is a function of both top and bottom

MOSFET R

RSW = R

The R

DS(ON)TOP

DS(ON)

and the duty cycle (DC) as follows :

DS(ON)

x DC + R

DS(ON)BOT

x (1−DC)

for both the top and bottom MOSFETs can be

obtained from the Typical Performance Characteristics

curves. Thus, to obtain I2R losses, simply add RSW to R

and multiply the result by the square of the average output

current.

Other losses including CIN and C

ESR dissipative

OUT

losses and inductor core losses generally account for less

than 2% of the total loss.

Thermal Considerations

The maximum power dissipation depends on the thermal

resistance of IC package, PCB layout, the rate of

surroundings airflow and temperature difference between

junction to ambient. The maximum power dissipation can

be calculated by following formula :

Where T

temperature, T

D(MAX)

= ( T

J(MAX)

- TA ) / θ

J(MAX)

is the maximum operation junction

is the ambient temperature and the θ

the junction to ambient thermal resistance.

For recommended operating conditions specification of

RT8016 DC/DC converter, where T

is the maximum

J(MAX)

junction temperature of the die and TA is the maximum

ambient temperature. The junction to ambient thermal

resistance θJA is layout dependent. For WDFN-6L 2x2

packages, the thermal resistance θJA is 165°C/W on the

standard JEDEC 51-7 four layers thermal test board.

The maximum power dissipation at TA = 25°C can be

calculated by following formula :

= (125°C − 25°C) / 165°C/W = 0.606W for

D(MAX)

WDFN-6L 2x2 packages

The maximum power dissipation depends on operating

ambient temperature for fixed T

and thermal

J(MAX)

resistance θJA.

For RT8016 packages, the Figure 5 of derating curves

allows the designer to see the effect of rising ambient

temperature on the maximum power allowed.

700

600

500

400

300

200

100

Maximum Power Dissipation (mW)

0 20 40 60 80 100 120 140

WDFN-6L 2x2

Ambient Temperature (°C)

Single Layer PCB

Figure 5. Derating Curves for RT8016 Package

Checking Tra n sient Re spon se

The regulator loop response can be checked by looking

at the load transient response. Switching regulators take

several cycles to respond to a step in load current. When

a load step occurs, V

equal to ΔI

resistance of C

discharge C

(ESR), where ESR is the effective series

LOAD

OUT

generating a feedback error signal used

OUT

by the regulator to return V

During this recovery time, V

immediately shifts by an amount

OUT

. ΔI

also begins to charge or

LOAD

to its steady-state value.

OUT

can be monitored for

OUT

overshoot or ringing that would indicate a stability problem.

Layout Considerations

Follow the PCB layout guidelines for optimal performance

of RT8016.

` For the main current paths as indicated in bold lines in

Figure 6, keep their traces short and wide.

` Put the input capacitor as close as possible to the device

pins (VIN and GND).

` LX node is with high frequency voltage swing and should

be kept small area. Keep analog components away from

LX node to prevent stray capacitive noise pick-up.

` Connect feedback network behind the output capacitors.

Keep the loop area small. Place the feedback

components near the RT8016.

DS8016-04 February 2012www.richtek.com

` Connect all analog grounds to a common node and then

connect the common node to the power ground behind

the output capacitors.

` An example of 2-layer PCB layout is shown in Figure 7

to Figure 8 for reference.

RT8016

VIN

FB/VOUT

GND

1, 5

OUT

Figure 7. Top Layer

Figure 6. EVB Schematic

Figure 8. Bottom Layer

Table 1. Recommended Inductors

Supplier

Inductance

(μH)

Current Rating (mA)

DCR (mΩ)

Dimensions

(mm)

TAIY O YUDEN 2.2 1480 60 3.00 x 3.00 x 1.50 NR 3015

GOTREND 2.2 1500 58 3.85 x 3.85 x 1.80 GTSD32

Sumida 2.2 1500 75 4.50 x 3.20 x 1.55 CDRH2D14 Sumida 4.7 1000 135 4.50 x 3.20 x 1.55 CDRH2D14

TAIY O YUDEN 4.7 1020 120 3.00 x 3.00 x 1.50 NR 3015

GOTREND 4.7 1100 146 3.85 x 3.85 x 1.80 GTSD32

Series

Supplier

Table 2. Recommended Capacitors for C

Capacitance

(μF)

Package Part Number

and C

OUT

TDK 4.7 603 C1608JB0J475M

MURATA 4.7 603 GRM188R60J475KE19 TAIYO YUDEN 4.7 603 JMK107BJ475RA TAIYO YUDEN 10 603 JMK107BJ106MA

TDK 10 805 C2012JB0J106M MURATA 10 805 GRM219R60J106ME19 MURATA 10 805 GRM219R60J106KE19

TAIYO YUDEN 10 805 JMK212BJ106RD

DS8016-04 February 2012 www.richtek.com

RT8016

Outline Dimension

SEE DETAIL A

DETAIL A

Pin #1 ID and Tie Bar Mark Options

Note : The configuration of the Pin #1 identifier is optional,

but must be located within the zone indicated.

Dimensions In Millimeters Dimensions In Inches

Symbol

Min Max Min Max

A 0.700 0.800 0.028 0.031

A1 0.000 0.050 0.000 0.002

A3 0.175 0.250

0.007 0.010

b 0.200 0.350 0.008 0.014

D 1.950 2.050 0.077 0.081

D2 1.000 1.450 0.039 0.057

E 1.950 2.050 0.077 0.081

E2 0.500 0.850 0.020 0.033

e 0.650 0.026

L 0.300 0.400

W-Type 6L DFN 2x2 Package

0.012 0.016

Richtek Technology Corporation

5F, No. 20, Taiyuen Street, Chupei City

Hsinchu, Taiwan, R.O.C.

Tel: (8863)5526789

Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should

obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot

assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be

accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third

parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.

DS8016-04 February 2012www.richtek.com

Richtek RT8016-10GQW, RT8016-10PQW, RT8016-12GQW, RT8016-12PQW, RT8016-13GQW Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual