The RT801 1/A is a high efficiency synchronous, ste p-down
DC/DC converter. Its input voltage range is from
2.6V to
5.5V and provides a n adjustable regulated output voltage
from 0.8V to 5V while delivering up to 2A of output current.
The internal synchronous low on-resistance power
switches increase efficiency and eliminate the need for
an external Schottky diode. Switching frequency is set
by an external resistor or can be synchronized to an
external clock. 100% duty cycle provides low dropout
operation extending battery life in portable systems.
Current mode operation with external compensation
allows the transient response to be opti mized over a wide
range of loads a nd output ca pa citors.
RT801 1/A operation in f orced continuous PWM Mode which
minimizes ripple voltage and reduces the noise and RF
interference.
100% duty cycle in Low Dropout Operation further
maximize battery life.
Ordering Information
RT8011/A
Package Type
F : MSOP-10 (RT8011)
QW : WDFN-10L 3x3 (RT8011)
QW : WDFN-8EL 3x3 (RT8011A)
Lead Plating System
P : Pb Free
G : Green (Halogen Free and Pb Free)
Without SYNC and PGOOD Function
With SYNC and PGOOD Function
Note :
Richtek products are :
` RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
` Suitable for use in SnPb or Pb-free soldering processes.
Features
zz
High Efficiency : Up to 95%
z
zz
zz
z Low R
zz
zz
z Programmable Frequency : 300kHz to 4MHz
zz
zz
z No Schottky Diode Required
zz
zz
z 0.8V Reference Allows Low Output Voltage
zz
zz
z Forced Continuous Mode Operation
zz
zz
z Low Dropout Operation : 100% Duty Cycle
zz
zz
z Synchronizable Switching Frequency (For RT8011
zz
Internal Switches : 110m
DS(ON)
ΩΩ
Ω
ΩΩ
Only)
zz
z Power Good Output Voltage Monitor (For RT8011
zz
Only)
zz
z RoHS Compliant and 100% Lead (Pb)-Free
zz
Applications
z Portable Instruments
z Battery-Powered Equipment
z Notebook Computers
z Distributed Power Systems
z IP Phones
z Digital Camera s
Pin Configurations
(TOP VIEW)
SHDN/RT
SYNC
GND
LX
PGND
SHDN/RT
SYNC
GND
LX
PGND
1
2
3
4
5
10
9
8
7
WDFN-10L 3x3
2
3
4
5
MSOP-10
COMP
FB
PGOOD
VDD
9
PVDD
10
9
8
7
6
SHDN/RT
GND
LX
PGND
COMP
FB
PGOOD
VDD
PVDD
1
2
3
4
8
7
6
5
WDFN-8EL 3x3
COMP
FB
VDD
PVDD
Marking Information
For marking information, contact our sales representative
directly or through a Richtek distributor located in your
area.
DS8011/A-02 March 2011www.richtek.com
1
RT8011/A
Typical Application Circuit
V
IN
2.6V to 5.5V
R
OSC
332k
Figure 1. T ypical Application Circuit for RT8011
V
IN
2.6V to 5.5V
R
OSC
332k
1
SHDN/RT
2
SYNC
3
GND
4
LX
5
PGND
1
SHDN/RT
2
GND
3
LX
4
PGND
RT8011
PGOOD
L1
2.2uH
RT8011A
L1
2.2uH
COMP
FB
VDD
PVDD
COMP
FB
VDD
PVDD
R1
510k
C
1000pF
C
1000pF
R1
510k
C
OUT
22uF
COMP
R2
C
22uF
COMP
R2
22pF
OUT
240k
C1
240k
V
OUT
2.5V/2A
V
OUT
2.5V/2A
R
COMP
R
C
IN
22uF
C
IN
22uF
PGOOD
100k
R
COMP
13k
13k
10
9
8
7
6
8
7
6
5
Figure 2. T ypical Application Circuit f or RT801 1A
Note : Using all Ceramic Capacitors
Table 1
Component Supplier Series Inductance (μH) DCR (mΩ) Current Rating (mA) Dimensions (mm)
TAIYO YUDEN NR 4018 2.2 60 2700 4x4x1.8
Sumida CDRH4D28 2.2 31.3 2040 4.5x4.5x3
GOTREND GTSD53 2.2 29 2410 5x5x2.8
ABC SR0403 2.2 47 2600 4.5x4x3.2
Table 2
Component Supplier Part No. Capacitance (μF) Case Size
Connect the FB pin directly to feedback resistors. The
resistor divider must be connected between V
GND.
PVDD
VDD
COMP
R
COMP
C
COMP
C
IN
RT8011
6
7
8
FB
9
10
GND
5
4
3
2
1
GND
Output capacitor must
be near RT8011
V
OUT
C
OUT
PGND
LX
GND
SYNC
SHDN/RT
and
OUT
LX should be
connected to
Inductor by wide
and short trace,
keep sensitive
compontents away
L1
from this trace
V
IN
R
OSC
C
F
V
OUT
Figure 3. RT801 1 Layout Guide
CIN must be placed between
V
DD
possible
V
IN
R1
R2
Connect the FB pin directly to feedback resistors. The
resistor divider must be connected between V
GND.
Figure 4. RT801 1A Layout Guide
Functional Pin Description
Pin Number Pin Function
RT8011 RT8011A
1 1 SHDN/RT
2 -- SYNC
3 2 GND
Pin Name
Oscillator Res istor Input. Connec ting a resistor to gro und from this pin s ets
the switching frequency. Forcing this pin t o VDD causes the device to be shut
down.
External Clock Synchronization Input. The oscillation frequency can be
synchronized to an external oscillation app lied to this pin. When tied to VDD,
internal oscillator is selected.
Signal Ground. All small-si gnal components and compensation com ponents
should connect to this ground, which in turn connects to PGND at one point.
and GND as closer as
C
IN
RT8011A
PVDD
VDD
COMP
R
COMP
C
COMP
5
63
7
8
GND
Output capacitor must
be near RT8011A
GND
4
2
1
C
OUT
PGND
LX
GNDFB
SHDN/RT
V
OUT
OUT
and
L1
R
OSC
LX should be
connected to
Inductor by wide
and short trace,
keep sensitive
compontents away
from this trace
4 3 LX Internal Power MOSFET Switches Output. Connect this pin to the inductor.
5 4 PGND Power Ground. Connect this pin close to the (−) terminal of CIN and C
OUT
.
6 5 PVDD Po wer Inp ut Sup ply. Decouple this pin to PGND with a capac itor.
7 6 VDD
8 -- PGOOD
9 7 FB
Signal Input Supply. Decouple this pin to GND with a capacitor. Normally V
is equal to PVDD.
Power Good Indicator. Open-drain logic output that is pulled to grou nd when
the output voltage is not within ±12.5% of regulation point.
Feedback Pin. Receives the feedback voltage from a resistive divider
connected across the output.
DD
Error Amplifier Compensation Point. The current comparator threshold
10 8 COMP
increases with this control voltage. Connect external compensation elements
to this pin to stabilize the control loop.
DS8011/A-02 March 2011www.richtek.com
3
RT8011/A
Function Block Diagram
SHDN/RT
SYNC
COMP
FB
0.8V
POR
VDD
EA
Int-SS
SD
Output
Clamp
0.9V
0.7V
0.4V
OSC
Slope
Com
V
REF
RT801 1
Control
Logic
OTP
ISEN
OC
Limit
Driver
NISEN
NMOS I Limit
PVDD
LX
PGND
PGOOD
GND
COMP
FB
0.8V
POR
VDD
EA
Int-SS
SD
Output
Clamp
SHDN/RT
OSC
0.9V
0.7V
0.4V
Slope
Com
V
REF
RT801 1A
Control
Logic
OTP
ISEN
OC
Limit
Driver
NISEN
NMOS I Limit
PVDD
LX
PGND
GND
DS8011/A-02 March 2011www.richtek.com
4
Operation
RT8011/A
Main Control Loop
The RT801 1/A is a monolithic, consta nt-frequency , current
mode step-down DC/DC converter. During normal
operation, the internal top power switch (P-Channel
MOSFET) is turned on at the beginning of each clock
cycle. Current in the inductor increases until the peak
inductor current reach the value defined by the voltage on
the COMP pin. The error a mplifier adjusts the voltage on
the COMP pin by comparing the feedback signal from a
resistor divider on the FB pin with an internal 0.8V
reference. When the load current increases, it causes a
reduction in the feedback voltage relative to the reference.
The error amplifier raises the COMP voltage until the
average inductor current matches the new load current.
When the top power MOSFET shuts off, the synchronous
power switch (N-Channel MOSFET) turns on until either
the bottom current limit is rea ched or the beginning of the
next clock cycle.
The operating frequency is set by an external resistor
connected between the RT pin a nd ground. The practical
switching frequency can range from 300kHz to 4MHz.
Power Good comparators will pull the PGOOD output low
if the output voltage comes out of regulation by 12.5%. In
an over-voltage condition, the top power MOSFET is turned
off and the bottom power MOSFET is switched on until
either the over-voltage condition clears or the bottom
MOSFET's current limit is rea ched.
Frequency Synchronization
The internal oscillator of the RT801 1 can be synchronized
to an external clock connected to the SYNC pin. The
frequency of the external clock can be in the range of
300kHz to 4MHz. For this application, the oscillator ti ming
resistor should be chosen to correspond to a frequency
that is about 20% lower than the synchronization
frequency .
The output voltage will then be determined by the input
voltage minus the voltage drop across the internal
P-Channel MOSFET a nd the inductor.
Low Supply Operation
The RT8011/A is designed to operate down to an input
supply voltage of 2.6V. One important consideration at
low input supply voltages is that the R
P-Channel a nd N-Cha nnel power switches increase s. The
user should calculate the power dissipation when the
RT8011/A is used at 100% duty cycle with low input
voltages to ensure that thermal limits are not exceeded.
Slope Compensation and Inductor Peak Current
Slope compensation provides stability in constant
frequency architectures by preventing sub-harmonic
oscillations at duty cycles greater than 50%. It is
accomplished internally by a dding a compensating ra mp
to the inductor current signal. Normally, the maximum
inductor peak current is reduced when slope compensation
is added. In the RT8011/A, however, separated inductor
current signals are used to monitor over current condition.
This keeps the maximum output current relatively constant
regardless of duty cycle.
Short-Circuit Protection
When the output is shorted to ground, the inductor current
decays very slowly during a single switching cycle. A
current runaway detector is used to monitor inductor
current. As current increa sing beyond the control of current
loop, switching cycles will be skipped to prevent current
runaway from occurring.
DS(ON)
of the
Dropout Operation
When the input supply voltage decrea ses toward the output
voltage, the duty cycle increases toward the maximum
on-time. Further reduction of the supply voltage forces
the main switch to remain on for more than one cycle
eventually reaching 100% duty cycle.
DS8011/A-02 March 2011www.richtek.com
5
RT8011/A
Absolute Maximum Ratings (Note 1)
z Supply Input V oltage, V DD, PV DD ----------------------------------------------------------------------------−0.3V to 6V
z LX Pin Switch Voltage-------------------------------------------------------------------------------------------- −0.3V to (PV DD + 0.3V)
z Other I/O Pin Voltages -------------------------------------------------------------------------------------------−0.3V to (VDD + 0.3V)
z LX Pin Switch Current -------------------------------------------------------------------------------------------- 4A
z Power Dissipation, P
MSOP-10------------------------------------------------------------------------------------------------------------ 467mW
W D FN-10L 3x3-----------------------------------------------------------------------------------------------------909mW
WDF N-8EL 3x3 ----------------------------------------------------------------------------------------------------909mW
z Package Thermal Re sistance (Note 2)
MSOP-10, θJA------------------------------------------------------------------------------------------------------214°C/W
W DFN-10L 3x3, θJA-----------------------------------------------------------------------------------------------11 0°C/W
W DFN-8EL 3x3, θJA-----------------------------------------------------------------------------------------------11 0°C/W
z Junction T emperature---------------------------------------------------------------------------------------------150°C
z Lead Temperature (Soldering, 10 sec.)----------------------------------------------------------------------- 260°C
z Storage T emperature Range ------------------------------------------------------------------------------------ −65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Mode) -------------------------------------------------------------------------------------- 2kV
MM (Ma chine Mode)---------------------------------------------------------------------------------------------- 200V
@ TA = 25°C
D
Recommended Operating Conditions (Note 4)
z Supply Input V oltage----------------------------------------------------------------------------------------------2.6V to 5.5V
z Junction T emperature Range------------------------------------------------------------------------------------
z Ambient T emperature Range------------------------------------------------------------------------------------
−40°C to 125°C
−40°C to 85°C
Electrical Characteristics
(V
= 3.3V, T
DD
Input Voltage Range VDD 2.6 -- 5.5 V
Feedback Voltage VFB 0.784 0.8 0.816 V
DC Bias Current
Output Voltage Line Regulation VIN = 2.7V to 5.5V -- 0.04 -- %/V
Output Voltage Load Regulation 0A < I
Error Amp lifi e r
Transconductance
Current Sense Transresistance RT -- 0.4 -- Ω
= 25°C, unless otherwise specified)
A
Parameter Symbol Test Conditions Min Typ Max Unit
Active , VFB = 0.78V, Not Switching -- 460 -- μA
Shutdown -- -- 1 μA
< 2A -- 0.25 - - %
LOAD
g
-- 800 -- μs
m
Power Good Range -- ±12.5 ±15 %
Power Good Pull-Down
Resistance
-- -- 120 Ω
To be continued
DS8011/A-02 March 2011www.richtek.com
6
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