Renesas RJK6006DPP-A0 Datasheet

Datasheet

RJK6006DPP-A0

600V - 5A - MOS FET
High Speed Power Switching

Features

 Low on-resistance

R

= 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C)

DS(on)

 Low leakage current
 High speed switching
 Quality grade: Standard

Outline

RENESAS Package code:
(Package name:

TO-220FPA)

1

2

3

PRSS0003AP-A

R07DS1432EJ0100

Rev.1.00

Mar.10.2021

D

1. Gate

G

S

2. Drain

3. Source

Absolute Maximum Ratings

(Ta = 25 C)

Item Symbol Ratings Unit

Drain to source voltage V

Gate to source voltage V

Drain current I

Drain peak current I

Body-drain diode reverse drain current IDR 5 A

Body-drain diode reverse drain peak current I

Avalanche current I

Avalanche energy E

Channel dissipation Pch

Channel temperature Tch 150 C

Storage temperature Tstg –55 to +150 C

Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a

reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage
of

Semiconductor Devices) and individual reliability data

Notes: 1. PW  10 s, duty cycle  1 %

2. Value at Tc = 25 C

3. STch = 25 C, Tch  150 C

4. Limited by maximum safe operation area

DR (pulse)

600 V

DSS

30 V

GSS

Notes4

5 A

D

Notes1

D (pulse)

AP

AR

15 A

Notes1

15 A

Notes3

5 A

Notes3

1.36 mJ

Notes2

29 W

.

R07DS1432EJ0100 Rev.1.00 Page 1 of 6
Mar.10.2021

RJK6006DPP-A0

Thermal Resistance Characteristics

(Ta = 25 C)

Item Symbol Max. Value

Channel to case thermal impedance ch-c 4.31 CW

Notes: 5. Designed target value on Renesas measurement condition. (Not tested)

Notes5

Unit

Electrical Characteristics

(Ta = 25 C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown voltage V

Zero gate voltage drain current I

Gate to source leak current I

Gate to source cutoff voltage V

Static drain to source on state
resistance

Input capacitance Ciss — 600 — pF VDS = 25 V

Output capacitance Coss — 70 — pF

Reverse transfer capacitance Crss — 10 — pF

Turn-on delay time t

Rise time tr — 17 — ns

Turn-off delay time t

Fall time tf — 10 — ns

Total gate charge Qg — 19 — nC VDD = 480 V

Gate to source charge Qgs — 3.4 — nC

Gate to drain charge Qgd — 9.2 — nC

Body-drain diode forward voltage VDF — 0.9 1.5 V IF = 5 A, VGS = 0

Body-drain diode reverse recovery time trr — 250 — ns IF = 5 A, VGS = 0

Notes: 6. Pulse test

600 — — V ID = 10 mA, VGS = 0

(BR)DSS

— — 1 A VDS = 600 V, VGS = 0

DSS

— — 0.1 A VGS = 30 V, VDS = 0

GSS

3.0 — 4.5 V VDS = 10 V, ID = 1 mA

GS(off)

R

— 1.4 1.6  ID = 2.5 A, VGS = 10 V

DS(on)

V

= 0

GS

f = 1 MHz

— 25 — ns ID = 2.5 A

d(on)

V

= 10 V

GS

R

= 80 

— 60 — ns

d(off)

L

Rg = 10 

V

= 10 V

GS

I

= 5 A

D

di

dt = 100 As

F

Notes6

Notes6

R07DS1432EJ0100 Rev.1.00 Page 2 of 6
Mar.10.2021

RJK6006DPP-A0

Main Characteristics

Maximum Safe Operation Area

100

10

(A)

D

1

Tc = 25C
1 shot
Notes7

Operation in this
area is limited by
R

DS(on)

0.1

Drain Current I

0.01

0.001

0.1 1 10 100 1000

P

W

1

0



s

=

1

00

s

(A)

D

Drain Current I

Typical Output Characteristics

10

Ta = 25C
Pulse Test

8

0

1

6

4

2

0

048121620

V

6

V

7

V

6

V

.

5

V

8

.

5

4

V

.

5

.

5

2

V

V

5

V

=

8

.

4

V

G

S

Drain to Source Voltage V

DS

Typical Transfer Characteristics

10

VDS = 10 V

Pulse Test

8

(A)

D

6

4

Drain Current I

2

0

02 46810

Gate to Source Voltage V

Tc = 25C

25C

75C

GS

Static Drain to Source on State Resistance

vs. Temperature (Typical)

5

()

VGS= 10 V
Pulse Test

DS(on)

4

ID = 5 A

3

2

1 A

2.5 A

(V)

(V)

Drain to Source Voltage VDS (V)

Static Drain to Source on State Resistance

vs. Drain Current (Typical)

10

()

DS(on)

R

Drain to Source on State Resistance

VGS = 10 V
Ta = 25C
Pulse Test

1

0.1
110010

Drain Current ID (A)

Body-Drain Diode Reverse

Recovery Time (Typical)

1000

(ns)

rr

100

1

0

R

Static Drain to Source on State Resistance

-25 0 5025 75 100 125 150

Case Temperature Tc (C)

Reverse Recovery Time t

10

110100

Reverse Drain Current IDR (A)

di / dt = 100 A / s
V

= 0, Ta = 25C

GS

Notes: 7. Designed target value on Renesas measurement condition. (Not tested)

Renesas recommends that operating conditions are designed according to a document “Power MOS FET・
IGBT Attention of Handling Semiconductor Devices”.

R07DS1432EJ0100 Rev.1.00 Page 3 of 6
Mar.10.2021