Renesas RJK03B9DPA Schematic [ru]
Preliminary Datasheet
RJK03B9DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
= 8.3 m typ. (at VGS = 10 V)
DS(on)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5
876
4
2134
G
5678
D
DDD
REJ03G1791-0320
Rev.3.20
May 12, 2010
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
SSS
123
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current ID 30 A
Drain peak current I
Body-drain diode reverse drain current IDR 30 A
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
Channel to case thermal impedance ch-c
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
30 V
DSS
±20 V
GSS
Note1
D(pulse)
120 A
Note 2
8 A
Note 2
6.4 mJ
Note3
25 W
Note3
5 C/W
REJ03G1791-0320 Rev.3.20 Page 1 of 6
May 12, 2010
RJK03B9DPA Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
resistance
Forward transfer admittance |yfs| — 65 — S ID = 15 A, VDS = 10 V
Input capacitance Ciss — 1110 — pF
Output capacitance Coss — 160 — pF
Reverse transfer capacitance Crss — 80 — pF
Gate Resistance Rg — 1.2 —
Total gate charge Qg — 7.4 — nC
Gate to source charge Qgs — 3.2 — nC
Gate to drain charge Qgd — 1.9 — nC
Turn-on delay time t
Rise time tr — 4 — ns
Turn-off delay time t
Fall time tf — 4.8 — ns
Body–drain diode forward voltage VDF — 0.88 1.15 V IF = 30 A, VGS = 0
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
30 — — V ID = 10 mA, VGS = 0
(BR)DSS
— — ± 0.1 A VGS = ±20 V, VDS = 0
GSS
— — 1 A VDS = 30 V, VGS = 0
DSS
1.2 — 2.5 V VDS = 10 V, I D = 1 mA
GS(off)
R
— 8.3 10.6 m ID = 15 A, VGS = 10 V
DS(on)
— 10.9 15.1 m ID = 15 A, VGS = 4.5 V
R
DS(on)
= 10 V
V
DS
V
= 0
GS
f = 1 MHz
= 10 V
V
DD
V
= 4.5 V
GS
= 30 A
I
D
— 8.8 — ns
d(on)
— 31 — ns
d(off)
— 13 — ns
t
rr
= 10 V, ID = 15 A
V
GS
V
10 V
DD
R
= 0.67
L
Rg = 4.7
=30 A, VGS = 0
I
F
/ dt = 100 A/ s
di
F
Note4
Note4
Note4
Note4
REJ03G1791-0320 Rev.3.20 Page 2 of 6
May 12, 2010
RJK03B9DPA Preliminary
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
4.5 V
10 V
(A)
D
16
12
3.0V
2.8 V
Pulse Test
Maximum Safe Operation Area
1000
100
(A)
D
10
1
Drain Current I
0.1
0.1
1 ms
PW = 10 ms
Operation in
this area is
limited by R
Tc = 25 °C
1 shot Pulse
Drain to Source Voltage V
Typical Transfer Characteristics
20
V
= 10 V
DS
Pulse Test
16
(A)
D
12
10 μs
100 μs
DC Operation
DS(on)
1 10 100
(V)
DS
8
Drain Current I
4
0
246810
Drain to Source Voltage V
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
(mV)
300
DS(on)
200
100
V
Drain to Source Saturation Voltage
0
4 8 12 16 20
Gate to Source Voltage VGS (V)
V
GS
2.6 V
= 2.4 V
(V)
DS
8
Drain Current I
4
Tc = 75°C
0
1234
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
100
(mΩ)
Pulse Test Pulse Test
ID = 20 A
10 A
5 A
DS(on)
30
VGS = 4.5 V
10
3
1
R
Static Drain to Source On State Resistance
3
Drain Current I
25°C
–25°C
vs. Drain Current
10 V
30 3001 10 100 1000
(A)
D
5
REJ03G1791-0320 Rev.3.20 Page 3 of 6
May 12, 2010
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