Renesas RJK0397DPA Schematic [ru]

Preliminary Datasheet

RJK0397DPA

Silicon N Channel Power MOS FET
Power Switching

Features

 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance

R

= 7.8 m typ. (at VGS = 10 V)

DS(on)

 Pb-free
 Halogen-free

Outline

RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))

5

876

4

2134

G

5678

D

DDD

REJ03G1788-0230

Rev.2.30

May 12, 2010

1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain

SSS

123

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current ID 30 A
Drain peak current I
Body-drain diode reverse drain current IDR 30 A
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
Channel to case thermal impedance ch-c
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tch = 25C, Rg  50 

3. Tc = 25C

30 V

DSS

±20 V

GSS

Note1

D(pulse)

120 A

Note 2

8 A

Note 2

6.4 mJ

Note3

25 W

Note3

5 C/W

REJ03G1788-0230 Rev.2.30 Page 1 of 6
May 12, 2010

RJK0397DPA Preliminary

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

resistance
Forward transfer admittance |yfs| — 65 — S ID = 15 A, VDS = 10 V

Input capacitance Ciss — 1110 — pF
Output capacitance Coss — 160 — pF
Reverse transfer capacitance Crss — 80 — pF
Gate Resistance Rg — 2.5 — 
Total gate charge Qg — 7.4 — nC
Gate to source charge Qgs — 3.2 — nC
Gate to drain charge Qgd — 1.9 — nC
Turn-on delay time t
Rise time tr — 4 — ns
Turn-off delay time t
Fall time tf — 5.1 — ns
Body–drain diode forward voltage VDF — 0.88 1.15 V IF = 30 A, VGS = 0
Body–drain diode reverse recovery

time
Notes: 4. Pulse test

30 — — V ID = 10 mA, VGS = 0

(BR)DSS

— — ± 0.1 A VGS = ±20 V, VDS = 0

GSS

— — 1 A VDS = 30 V, VGS = 0

DSS

1.2 — 2.5 V VDS = 10 V, I D = 1 mA

GS(off)

R

— 7.8 10.1 m ID = 15 A, VGS = 10 V

DS(on)

— 10.4 14.6 m ID = 15 A, VGS = 4.5 V

R

DS(on)

= 10 V

V

DS

V

= 0

GS

f = 1 MHz

= 10 V

V

DD

V

= 4.5 V

GS

= 30 A

I

D

— 8.8 — ns

d(on)

— 36 — ns

d(off)

— 13 — ns

t

rr

= 10 V, ID = 15 A

V

GS

V

 10 V

DD

R

= 0.67 

L

Rg = 4.7 

=30 A, VGS = 0

I

F

/ dt = 100 A/ s

di

F

Note4

Note4

Note4

Note4

REJ03G1788-0230 Rev.2.30 Page 2 of 6
May 12, 2010

RJK0397DPA Preliminary

Main Characteristics

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

20

4.5 V

10 V

(A)

D

16

12

3.0V

2.8 V

Pulse Test

Maximum Safe Operation Area

1000

100

(A)

D

10

1

Drain Current I

0.1

0.1

1 ms

PW = 10 ms

Operation in
this area is
limited by R

Tc = 25 °C
1 shot Pulse

Drain to Source Voltage V

Typical T ransfer Characteristics

20

V

= 10 V

DS

Pulse Test

16

(A)

D

12

10 μs

100 μs

DC Operation

DS(on)

1 10 100

(V)

DS

8

Drain Current I

4

0

246810

Drain to Source Voltage V

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

400

(mV)

300

DS(on)

200

100

Drain to Source Saturation Voltage

V

0

4 8 12 16 20

Gate to Source Voltage VGS (V)

2.6 V

V

= 2.4 V

GS

DS

Pulse Test

ID = 20 A

10 A

(V)

5 A

8

Drain Current I

4

Tc = 75°C

0

1234

25°C

–25°C

Gate to Source Voltage VGS (V)

Static Drain to Source On State Resistance

vs. Drain Current

100

(mΩ)

DS(on)

R

Static Drain to Source On State Resistance

30

10

3

1

Pulse Test

VGS = 4.5 V

3

Drain Current I

10 V

30 3001 10 100 1000

(A)

D

5

REJ03G1788-0230 Rev.2.30 Page 3 of 6
May 12, 2010

RJK0397DPA Preliminary

Static Drain to Source On State Resistance

vs. Temperature

20

(mΩ)

R

Static Drain to Source On State Resistance

Pulse Test

16

DS(on)

12

VGS = 4.5 V

8

4

0

–25 0 25 50 75 100 125 150

ID = 5 A, 10 A, 20 A

5 A, 10 A, 20 A

10 V

Case Temperature Tc (°C)

Dynamic Input Characteristics

50

DS

40

30

20

ID = 30 A

VDD = 25 V

V

DS

10 V

V

GS

(V)

20

16

12

8

(V)

GS

Typical Capacitance vs.
Drain to Source Voltage

10000

3000

1000

300

100

Capacitance C (pF)

30

VGS = 0
f = 1 MHz

10

010 3020

Drain to Source Voltage VDS (V)

Reverse Drain Current vs.

Source to Drain Voltage

50

(A)

DR

40

30

20

10 V

5 V

Ciss

Coss

Crss

Pulse Test

10

VDD = 25 V

10 V

Drain to Source Voltage V

0

816243240

Gate Charge Qg (nc)

Maximum Avalanche Energy vs.

Channel Temperature Derating

10

(mJ)

AR

8

6

4

2

0

Repetitive Avalanche Energy E

25 50 75 100 125 150

IAP = 8 A
V
duty < 0.1%
Rg ≥ 50 Ω

Channel Temperature Tch (°C)

= 15 V

DD

4

00

Gate to Source Voltage V

10

Reverse Drain Current I

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V

VGS = 0, –5 V

SD

(V)

REJ03G1788-0230 Rev.2.30 Page 4 of 6
May 12, 2010

RJK0397DPA Preliminary

Normalized Transient Thermal Impedance vs. Pulse Width

3

(t)

s

γ

1

D = 1

0.5

0.3

0.2

0.1

0.05

0.1

0.02

0.01

0.03

1shot pulse

0.01

Normalized Transient Thermal Impedance

10 μ

100 μ

1 m 10 m

Pulse Width PW (S)

θch – c(t) = γs (t) • θch – c
θch – c = 5.0°C/W, Tc = 25°C

P

DM

PW

T

D =

100 m 1 10

PW

T

Vin
15 V

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

I

AP

Monitor

D. U. T

1

E

= L • I

DD

AR

2

I

AP

L

V

DD

V

0

2

•

AP

V

I

D

Switching Time Test Circuit Switching Time Waveform

R

L

V

DS

= 10 V

Vout
Monitor

Vin

Vout

10%

10%

90%

Vin Monitor

Rg

Vin
10 V

D.U.T.

V

DSS

90%

DSS

– V

DD

V

90%

DS

V

10%

(BR)DSS

t

d(on)

t

r

t

d(off)

t

f

REJ03G1788-0230 Rev.2.30 Page 5 of 6
May 12, 2010

RJK0397DPA Preliminary

Package Dimensions

Package Name

WPAK(2)

0.545Typ

+0.1

-0.3

6.1

0.05Max

0Min

⎯ PWSN0008DC-A WPAK(2)V 0.07g

5.1 ± 0.2

1.27Typ

4.90 ± 0.1

Stand-off

0.8Max

+0.1

-0.2

5.9

0.2Typ

MASS[Typ.]RENESAS CodeJEITA Package Code Previous Code

0.04Min

0.7Typ

Unit: mm

4.21Typ

1.27Typ

3.9 ± 0.2

3.6 ± 0.2 0.5 ± 0.15

0.4 ± 0.06

0.5 ± 0.15

Ordering Information

Part No. Quantity Shipping Container

RJK0397DPA-00-J53 3000 pcs Taping

(Ni/Pd/Au plating)

Notice:The reverse pattern of die-pad

support lead described above exists.

REJ03G1788-0230 Rev.2.30 Page 6 of 6
May 12, 2010

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