Renesas RJK0393DPA Schematic [ru]
Preliminary Datasheet
RJK0393DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5V gate drive
Low drive current
High density mounting
Low on-resistance
R
= 3.3 m typ. (at VGS = 10 V)
DS(on)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5
876
4
2134
G
5678
D
DDD
REJ03G1784-0220
Rev.2.20
May 21, 2010
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
SSS
123
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current ID 40 A
Drain peak current I
Body-drain diode reverse drain current IDR 40 A
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
Channel to case thermal impedance ch-C 3.13 C/W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
30 V
DSS
20 V
GSS
Note1
D(pulse)
160 A
Note 2
16 A
Note 2
25.6 mJ
Note3
40 W
REJ03G1784-0220 Rev.2.20 Page 1 of 6
May 21, 2010
RJK0393DPA Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
resistance
Forward transfer admittance |yfs| — 100 — S ID = 20 A, VDS = 10 V
Input capacitance Ciss — 3270 — pF
Output capacitance Coss — 430 — pF
Reverse transfer capacitance Crss — 225 — pF
Gate Resistance Rg — 1.4 —
Total gate charge Qg — 21 — nC
Gate to source charge Qgs — 9.5 — nC
Gate to drain charge Qgd — 4.7 — nC
Turn-on delay time t
Rise time tr — 6.0 — ns
Turn-off delay time t
Fall time tf — 7.1 — ns
Body–drain diode forward voltage VDF — 0.83 1.08 V IF = 40 A, VGS = 0
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
30 — — V ID = 10 mA, VGS = 0
(BR)DSS
— — 0.1 A VGS = 20 V, VDS = 0
GSS
— — 1 A VDS = 30 V, VGS = 0
DSS
1.2 — 2.5 V VDS = 10 V, ID = 1 mA
GS(off)
R
— 3.3 4.3 m ID = 20 A, VGS = 10 V
DS(on)
— 4.2 5.9 m ID = 20 A, VGS = 4.5 V
R
DS(on)
= 10 V, VGS = 0,
V
DS
f = 1 MHz
= 10 V, VGS = 4.5 V,
V
DD
= 40 A
I
D
— 13.2 — ns
d(on)
— 52 — ns
d(off)
— 23.5 — ns
t
rr
= 10 V, ID = 20 A,
V
GS
V
10 V, RL = 0.5 ,
DD
Rg = 4.7
IF = 40 A, V
/ dt = 100 A/ s
di
F
GS
= 0
Note4
Note4
Note4
Note4
REJ03G1784-0220 Rev.2.20 Page 2 of 6
May 21, 2010
RJK0393DPA Preliminary
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
(A)
D
50
40
30
10 V
4.5 V
2.9 V
2.7 V
Maximum Safe Operation Area
1000
100
(A)
D
10
Operation in
this area is
1
Drain Current I
0.1
0.1
limited by R
Tc = 25 °C
1 shot Pulse
0.3 1 3 10 30 100
Drain to Source Voltage V
Typical T ransfer Characteristics
50
V
= 10 V
DS
Pulse Test
40
(A)
D
30
DS(on)
10ms
DC Operation
10 μs
100 μs
1 ms
DS
(V)
20
Drain Current I
10
0
246810
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
(mV)
160
DS(on)
120
80
40
V
Drain to Source Saturation Voltage
0
4 8 12 16 20
Gate to Source Voltage VGS (V)
V
= 2.4 V
GS
Pulse Test
Pulse Test
ID = 20 A
2.5 V
10 A
5 A
20
Drain Current I
10
0
Tc = 75°C
1234
Gate to Source Voltage V
25°C
–25°C
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
(mΩ)
DS(on)
R
Static Drain to Source On State Resistance
Pulse Test
50
20
10
VGS = 4.5 V
5
10 V
2
1
1 10 100 1000
3
Drain Current I
30 300
(A)
D
5
REJ03G1784-0220 Rev.2.20 Page 3 of 6
May 21, 2010
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