Renesas RJK0390DPA Schematic [ru]
Preliminary Datasheet
RJK0390DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
= 1.7 m typ. (at VGS = 10 V)
DS(on)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5
876
4
2134
G
5678
D
DDD
REJ03G1823-0130
Rev.1.30
May 12, 2010
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
SSS
123
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current ID 65 A
Drain peak current I
Body-drain diode reverse drain current IDR 65 A
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
Channel to case thermal impedance ch-c
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
30 V
DSS
±20 V
GSS
Note1
D(pulse)
260 A
Note 2
30 A
Note 2
90 mJ
Note3
60 W
Note3
2.08 C/W
REJ03G1823-0130 Rev.1.30 Page 1 of 6
May 12, 2010
RJK0390DPA Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
resistance
Forward transfer admittance |yfs| — 200 — S ID = 32.5 A, VDS = 10 V
Input capacitance Ciss — 8900 — pF
Output capacitance Coss — 1120 — pF
Reverse transfer capacitance Crss — 570 — pF
Gate Resistance Rg — 0.80 —
Total gate charge Qg — 54 — nC
Gate to source charge Qgs — 25 — nC
Gate to drain charge Qgd — 11.3 — nC
Turn-on delay time t
Rise time tr — 10.8 — ns
Turn-off delay time t
Fall time tf — 37 — ns
Body–drain diode forward voltage VDF — 0.79 1.03 V IF = 65 A, VGS = 0
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
30 — — V ID = 10 mA, VGS = 0
(BR)DSS
— — ± 0.5 A VGS = ±20 V, VDS = 0
GSS
— — 1 A VDS = 30 V, VGS = 0
DSS
1.2 — 2.5 V VDS = 10 V, I D = 1 mA
GS(off)
R
— 1.7 2.2 m ID = 32.5 A, VGS = 10 V
DS(on)
— 2.1 2.9 m ID = 32.5 A, VGS = 4.5 V
R
DS(on)
= 10 V
V
DS
V
= 0
GS
f = 1 MHz
= 10 V
V
DD
V
= 4.5 V
GS
= 65 A
I
D
— 22 — ns
d(on)
— 92 — ns
d(off)
— 45 — ns
t
rr
= 10 V, ID = 32.5 A
V
GS
V
10 V
DD
R
= 0.31
L
Rg = 4.7
=65 A, VGS = 0
I
F
/ dt = 100 A/ s
di
F
Note4
Note4
Note4
Note4
REJ03G1823-0130 Rev.1.30 Page 2 of 6
May 12, 2010
RJK0390DPA Preliminary
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
(A)
D
100
80
60
4.5 V
10 V
3.4 V
Pulse Test
3.2 V
Maximum Safe Operation Area
1000
100
(A)
D
10
1
Drain Current I
0.1
0.1
1 ms
PW = 10 ms
Operation in
this area is
limited by R
Tc = 25°C
1 shot Pulse
Drain to Source Voltage VDS (V)
TypicalTransfer Characteristics
100
VDS= 10 V
Pulse Test
80
(A)
D
60
DC Operation
DS(on)
1 10 100
40
20
Drain Current I
0
0
246810
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
80
(mV)
60
DS (on)
40
20
Drain to Source Saturation Voltage
V
0
4 8 12 16 20
Gate to Source Voltage VGS (V)
3.0 V
V
= 2.8 V
GS
Pulse Test
I
= 20 A
D
10 A
5 A
40
20
Drain Current I
0
0
1234
Gate to Source Voltage V
Tc = 75°C
25°C
–25°C
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
100
(mΩ)
R
Static Drain to Source On State Resistance
30
DS(on)
10
0.3
0.1
Pulse Test
3
1
VGS = 4.5 V
10 V
3
Drain Current I
30 3001 10 100 1000
(A)
D
5
REJ03G1823-0130 Rev.1.30 Page 3 of 6
May 12, 2010
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