Renesas RJK0389DPA Schematic [ru]
Preliminary Datasheet
RJK0389DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-A
(Package name: WPAK-D2)
8
7
6
5
4
3
1
G1
1
2
2
D1
MOS1
4
D13D1
G2
9
S1/D2
8
S2
5S26S27
MOS2 and
Schottky Barrier Diode
5678
9
432
(Bottom View)
REJ03G1722-0410
Rev.4.10
May 13, 2010
1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
1
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item Symbol
Drain to source voltage V
Gate to source voltage V
Drain current ID 15 20 A
Drain peak current I
Reverse drain current IDR 15 20 A
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
Channel temperature Tch 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
30 30 V
DSS
±20 ±20 V
GSS
Note1
D(pulse)
60 80 A
Note 2
8 11 A
Note 2
6.4 12.1 mJ
Note3
10 10 W
MOS1 MOS2
Unit
REJ03G1722-0410 Rev.4.10 Page 1 of 10
May 13, 2010
RJK0389DPA Preliminary
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
resistance
Forward transfer admittance |yfs| — 32 — S ID = 7.5 A, VDS = 10 V
Input capacitance Ciss — 860 — pF
Output capacitance Coss — 165 — pF
Reverse transfer capacitance Crss — 53 — pF
Gate Resistance Rg — 4.2 —
Total gate charge Qg — 6.3 — nC
Gate to source charge Qgs — 2.3 — nC
Gate to drain charge Qgd — 1.4 — nC
Turn-on delay time t
Rise time tr — 4.1 — ns
Turn-off delay time t
Fall time tf — 5.6 — ns
Body–drain diode forward voltage VDF — 0.84 1.10 V IF = 15 A, VGS = 0
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
30 — — V ID = 10 mA, VGS = 0
(BR)DSS
— — ±0.1 A VGS = ±20 V, VDS = 0
GSS
— — 1 A VDS = 30 V, VGS = 0
DSS
1.2 — 2.5 V VDS = 10 V, ID = 1 mA
GS(off)
R
— 8.2 10.7 m ID = 7.5 A, VGS = 10 V
DS(on)
— 11.8 16.5 m ID = 7.5 A, VGS = 4.5 V
R
DS(on)
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
= 15 A
I
D
— 6.9 — ns
d(on)
VGS = 10 V, ID = 7.5 A
VDD 10 V
= 1.33
— 40.8 — ns
d(off)
— 20 — ns
t
rr
R
L
= 4.7
R
g
=15 A, VGS = 0
I
F
/ dt = 100 A/s
di
F
Note4
Note4
Note4
Note4
REJ03G1722-0410 Rev.4.10 Page 2 of 10
May 13, 2010
RJK0389DPA Preliminary
• MOS2
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
resistance
Forward transfer admittance |yfs| — 38 — S ID = 10 A, VDS = 10 V
Input capacitance Ciss — 1000 — pF
Output capacitance Coss — 240 — pF
Reverse transfer capacitance Crss — 100 — pF
Gate Resistance Rg — 4.5 —
Total gate charge Qg — 7.2 — nC
Gate to source charge Qgs — 2.9 — nC
Gate to drain charge Qgd — 2.2 — nC
Turn-on delay time t
Rise time tr — 4.0 — ns
Turn-off delay time t
Fall time tf — 6.6 — ns
Schottky Barrier diode forward voltage VF — 0.44 — V IF = 2 A, VGS = 0
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
30 — — V ID = 10 mA, VGS = 0
(BR)DSS
— — ±0.1 A VGS = ±20 V, VDS = 0
GSS
— — 1 mA VDS = 30 V, VGS = 0
DSS
1.2 — 2.5 V VDS = 10 V, ID =1 mA
GS(off)
R
— 6.8 8.9 m ID = 10 A, VGS = 10 V
DS(on)
— 10.5 14.7 m ID = 10 A, VGS = 4.5 V
R
DS(on)
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
= 20 A
I
D
— 8.5 — ns
d(on)
VGS = 10 V, ID = 10 A
VDD 10 V
= 1.0
— 39 — ns
d(off)
— 12 — ns
t
rr
R
L
= 4.7
R
g
= 20 A, VGS = 0
I
F
/ dt = 100 A/s
di
F
Note4
Note4
Note4
Note4
REJ03G1722-0410 Rev.4.10 Page 3 of 10
May 13, 2010
RJK0389DPA Preliminary
Main Characteristics
• MOS1
Power vs. Temperature Derating
20
15
10
5
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
(A)
D
4.5 V
10 V
16
12
3.2 V
Pulse Test
3.0 V
Maximum Safe Operation Area
1000
100
(A)
D
10
Operation in
this area is
1
Drain Current I
limited by R
Tc = 25°C
1 shot Pulse
0.1
0.1
Drain to Source Voltage VDS (V)
TypicalTransfer Characteristics
20
VDS= 10 V
Pulse Test
16
(A)
D
12
1 ms
10 ms
DC operation
DS(on)
1 10 100
8
4
Drain Current I
0
246810
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
(mV)
150
DS (on)
100
50
Drain to Source Saturation Voltage
V
0
4 8 12 16 20
Gate to Source Voltage VGS (V)
2.8 V
V
= 2.6 V
GS
Pulse Test
I
= 10 A
D
5 A
2 A
8
4
Drain Current I
0
Tc = 75°C
1234
Gate to Source Voltage V
25°C
–25°C
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
(mΩ)
R
Static Drain to Source On State Resistance
DS(on)
30
10
Pulse Test
VGS = 4.5 V
3
1
10 V
3
30 3001 10 100 1000
Drain Current I
(A)
D
5
REJ03G1722-0410 Rev.4.10 Page 4 of 10
May 13, 2010
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