Renesas RJK0355DPA Schematic [ru]
RJK0355DPA
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
= 8.2 mΩ typ. (at VGS = 10 V)
R
DS(on)
• Pb-free
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
8
7
6
5
5678
D
DDD
REJ03G1649-0500
Rev.5.00
Aug 05, 2008
4
1
2
4
3
G
SSS
123
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current ID 30 A
Drain peak current I
Body-drain diode reverse drain current IDR 30 A
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
Channel to case thermal resistance θch-c
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
30 V
DSS
±20 V
GSS
Note1
D(pulse)
120 A
Note 2
9 A
Note 2
8.1 mJ
Note3
25 W
Note3
5 °C/W
REJ03G1649-0500 Rev.5.00 Aug 05, 2008
Page 1 of 6
RJK0355DPA
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
resistance
Forward transfer admittance |yfs| — 55 — S ID = 15 A, VDS = 10 V
Input capacitance Ciss — 860 — pF
Output capacitance Coss — 165 — pF
Reverse transfer capacitance Crss — 53 — pF
Gate Resistance Rg — 4.2 — Ω
Total gate charge Qg — 6.3 — nC
Gate to source charge Qgs — 2.3 — nC
Gate to drain charge Qgd — 1.4 — nC
Turn-on delay time t
Rise time tr — 4.1 — ns
Turn-off delay time t
Fall time tf — 5.6 — ns
Body–drain diode forward voltage VDF — 0.87 1.14 V IF = 30 A, VGS = 0
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
30 — — V ID = 10 mA, VGS = 0
(BR)DSS
— — ± 0.1 µA VGS = ±20 V, VDS = 0
GSS
— — 1 µA VDS = 30 V, VGS = 0
DSS
1.2 — 2.5 V VDS = 10 V, I D = 1 mA
GS(off)
R
— 8.2 10.7 mΩ ID = 15 A, VGS = 10 V
DS(on)
— 11.8 16.5 mΩ ID = 15 A, VGS = 4.5 V
R
DS(on)
= 10 V
V
DS
V
= 0
GS
f = 1 MHz
= 10 V
V
DD
V
= 4.5 V
GS
= 30 A
I
D
— 6.9 — ns
d(on)
— 40.8 — ns
d(off)
— 20 — ns
t
rr
= 10 V, ID = 15 A
V
GS
V
≅ 10 V
DD
R
= 0.66 Ω
L
Rg = 4.7 Ω
=30 A, VGS = 0
I
F
/ dt = 100 A/ µs
di
F
Note4
Note4
Note4
Note4
REJ03G1649-0500 Rev.5.00 Aug 05, 2008
Page 2 of 6
RJK0355DPA
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
(A)
D
4.5 V
10 V
16
12
3.2 V
Pulse Test
3.0 V
Maximum Safe Operation Area
1000
100
(A)
D
10
1
Drain Current I
0.1
0.1
PW = 10 ms
Operation in
this area is
limited by R
Tc = 25°C
1 shot Pulse
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
V
= 10 V
DS
Pulse Test
16
(A)
D
12
10 µs
100 µs
1 ms
DC Operation
DS(on)
1 10 100
8
4
Drain Current I
V
0
246810
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
(mV)
150
DS (on)
100
50
Drain to Source Saturation Voltage
V
0
4 8 12 16 20
2.8 V
= 2.6 V
GS
Pulse Test
I
= 10 A
D
5 A
2 A
8
4
Drain Current I
0
Tc = 75°C
12 34
25°C
–25°C
Gate to Source Voltage V
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
(mΩ)
30
DS (on)
VGS = 4.5 V
10
10 V
3
Drain to Source on State Resistance
1
R
3
30 3001 10 100 1000
GS
5
(V)
Gate to Source Voltage VGS (V)
REJ03G1649-0500 Rev.5.00 Aug 05, 2008
Page 3 of 6
Drain Current I
(A)
D
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