Renesas QN7002 Schematic [ru]
Preliminary Data Sheet
QN7002
R07DS0269EJ0100
Rev.1.00
N-CHANNEL MOSFET FOR SWITCHING
Mar 11, 2011
Description
The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
Directly driven by a 4.5 V power source.
•
• Low on-state resistance
R
DS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)
R
DS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number Lead Plating Packing Package
QN7002-T1B-AT Pure Sn 3000p/Reel SC-59 (Mini Mold)
Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Remark for Agent
ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT”
Absolute Maximum Ratings (T
A = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation P
Channel Temperature T
Storage Temperature T
DS = 0 V) VGSS ±20 V
D(DC) 200 mA
Note
ID(pulse) ±800 mA
T 200 mW
ch 150 °C
stg −55 to +150 °C
Note PW ≤ 10 μs, Duty Cycle ≤ 1%
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
ESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.
V
R07DS0269EJ0100 Rev.1.00 Page 1 of 6
Mar 11, 2011
QN7002 Chapter Title
Electrical Characteristics (TA = 25°C)
Characteristics Symbol Test Conditions MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1
GS = ±20 V, VDS = 0 V
Gate Leakage Current IGSS
V
±10
μ
A
μ
A
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 2.5 V
Forward Transfer Admittance
Drain to Source On-state Resistance
Note
Note
| y
fs | VDS = 10 V, ID = 100 mA 150 mS
RDS(on)1 VGS = 10 V, ID = 100 mA 2.1 2.7
DS(on)2 VGS = 4.5 V, ID = 50 mA 2.4 3.2
R
Ω
Ω
Input Capacitance Ciss VDS = 10 V, 20 pF
Output Capacitance Coss VGS = 0 V, 9 pF
Reverse Transfer Capacitance Crss f = 1.0 MHz 2 pF
Turn-on Delay Time td(on) VDD = 10 V, 16 ns
Rise Time tr ID = 200 mA, 6.5 ns
Turn-off Delay Time td(off) VGS = 10 V, 82 ns
Fall Time tf RG = 10 Ω 32 ns
Total Gate Charge QG ID = 200 mA, VDD = 25 V, VGS = 10 V 2 nC
Body Diode Forward Voltage
Note
V
F(S-D) IF = 200 mA, VGS = 0 V 0.86 V
Note Pulsed
Test Circuit Switching Time
D.U.T.
V
GS
GS
DS
V
0
DS
V
DS
0
10%
90%
t
d(on)tr
10% 10%
t
on
90%
V
GS
90%
t
f
t
d(off)
t
off
PG.
GS
V
0
τ
μ
τ = 1 s
Duty Cycle ≤ 1%
L
R
V
G
R
Wave Form
V
DD
V
Wave Form
R07DS0269EJ0100 Rev.1.00 Page 2 of 6
Mar 11, 2011
QN7002 Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
0.2
80
60
0.1
40
20
0
0 25 50 75 100 125 150 175
dT - Percentage of Rated Power - %
T
A – Ambient Temperature - °C
0.0
PT - Total Power Dissipation - W
0 25 50 75 100 125 150 175
T
A – Ambient Temperature - °C
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
1
VDS= 5 V
Pulsed
0.1
0.01
0.9
0.8
0.7
0.6
0.5
1
VGS = 10 V
4.5 V
0.4
ID - Drain Current - A
0.3
0.2
0.1
Pulsed
0
02468
DS - Drain to Source Voltage - V
V
ID - Drain Current - A
0.001
0.0001
012345
V
GS - Gate to Source Voltage – V
TA = 125°C
75°C
25°C
−25°C
GATE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
2.5
2
GS
VDS = V
ID = 250 μA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
TA = −25°C
25°C
75°C
125°C
0.1
1.5
VDS = 10 V
Pulsed
1
-50 0 50 100 150
VGS(th) - Gate Threshold Voltage - V
T
ch - Channel Temperature - °C
0.01
0.01 0.1 1
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
R07DS0269EJ0100 Rev.1.00 Page 3 of 6
Mar 11, 2011
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