Renesas N0603N Datasheet

N0603N

Part No.

Package

Packing

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

V

60

V

Gate to Source Voltage (VDS = 0 V)

V

GSS

±20

V

Drain Current (DC) (TC = 25°C)

I

100

A

Drain Current (pulse)

I

D(pulse)

±400

A

Total Power Dissipation (TC = 25°C)

PT1

156

W

Total Power Dissipation (TA = 25°C)

PT2

1.5

W

Channel Temperature

T

150 °C

Storage Temperature

T

stg

−55 to +150

°C

Single Avalanche Current

IAS

55

A

Single Avalanche Energy

EAS

300

mJ

Item

Symbol

Max. Value

Unit

Channel to Case Thermal Resistance

R

0.80

C/W

Channel to Ambient Thermal Resistance

R

th(ch-A)

83.3

C/W

R07DS0559EJ0200

2020.06.10

N-channel MOSFET

60 V, 100 A, 4.6 mΩ

Features

Preliminary Data Sheet

Rev.2.00

• Low on-state resistance : R

• Low C

• High current : I

: C

iss

= 7730 pF TYP. (VDS = 25 V, VGS = 0 V)

iss

= ±100 A

D(DC)

= 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)

DS (on)

• RoHS Compliant

• Quality Grade : Standard

• Applications : For high current switching

Ordering Information

N0603N-S23-AY TO-262, Pb-free

Note: 1. Pb-free means that this product does not contain lead in the external electrode.

Note1

50 pcs / Magazine (Tube)

Absolute Maximum Ratings (TA = 25°C)

DSS

D(DC)

Note2

±

ch

Note3

Note3

Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a

reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of
Semiconductor Devices) and individual reliability data.

Notes: 2. PW ≤ 10

3. Starting T

µ

s, Duty Cycle ≤ 1%

= 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 µH

ch

Thermal Resistance

Note4

°

th(ch-C)

Notes: 4. This data is the designed target maximum value on Renesas’s measurement condition. (Not tested)

°

R07DS0559EJ0200 Rev.2.00 Page 1 of 6

2020.6.10

N0603N Chapter Title

Item

Symbol

MIN.

TYP.

MAX.

Unit

Test Conditions

Zero Gate Voltage Drain Current

I

1 µA

VDS = 60 V, VGS = 0 V

Gate Leakage Current

I

±100

nA

VGS = ±20 V, VDS = 0 V

Gate to Source Cut-off Voltage

V

2.0 4.0

V

VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

Note5

| y

|

35 S VDS = 10 V, ID = 50 A

Input Capacitance

C

7730 pF

VDS = 25 V,

Output Capacitance

C

560 pF

VGS = 0 V,

Turn-on Delay Time

t

d(on)

35 ns

VDD = 30 V, ID = 50 A,

Rise Time

tr 12 ns

VGS = 10 V,

Turn-off Delay Time

t

d(off)

76 ns

RG = 0 Ω

Fall Time

tf 14 ns

Total Gate Charge

QG 133 nC

VDD = 48 V,

Gate to Source Charge

QGS 38 nC

VGS = 10 V,

Gate to Drain Charge

QGD 38 nC

ID = 100 A

Body Diode Forward Voltage

Note5

V

1.5

V

IF = 100 A, VGS = 0 V

Reverse Recovery Time

trr 44 ns

Reverse Recovery Charge

Qrr 61 nC

Electrical Characteristics (TA = 25°C)

DSS

GSS

GS(off)

R

fs

3.7 4.6 mΩ VGS = 10 V, ID = 50 A

DS(on)

iss

oss

290 pF f = 1 MHz

rss

F(S-D)

IF = 50 A, VGS = 0 V,
di/dt = 100 A/

µ

s

Drain to Source On-state Resistance

Note5

Reverse Transfer Capacitance C

Notes: 5. Pulsed test

R07DS0559EJ0200 Rev.2.00 Page 2 of 6

2020.6.10

N0603N Chapter Title

SAFE OPERATING AREA

CASE TEMPERATURE

0

20

40

60

80

100

120

140

0 25 50 75

100 125

150

175

TC - Case Temperature - °C

0

50

100

150

200

0

25

50

75

100

125 150

175

TC - Case Temperature - °C

0.1

1

10

100

1000

0.1 1 10 100

R

DS(on)

Limited

Power Dissipation Limited

T

C

= 25°C

Single Pulse

PW = 300 µs

1 ms

10 ms

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

th(t)

- Transient Thermal Resistance - ° C/W

0.01

0.1

1

10

100

1000

Single pulse

R

th(ch-A)

= 83.3°C/W

R

th(ch-C)

= 0.80°C/W

N

Note6

N

TA = 25°C

Typical Characteristics

DERATING FACTOR OF FORWARD BIAS

- Total Power Dissipation - W

T

TOTAL POWER DISSIPATION vs.

P

dT - Percentage of Rated Power - %

FORWARD BIAS SAFE OPERATING AREA

- Drain Current - A

D

I

Notes: 6. Designed target value on Renesas measurement condition. (T

7. This data is the designed value on Renesas’s measurement condition. Renesas recommends that operating conditions
are designed according to a document “Power MOSFET/IGBT Attention of Handling Semiconductor Devices (R07ZZ0010)”.

8. This data is the designed target maximum value on Renesas’s measurement condition.

R07DS0559EJ0200 Rev.2.00 Page 3 of 6

2020.6.10

ote7

ote8

0.1 m 1 m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

= 25°C, unless otherwise specified)

C