Renesas N0413N Datasheet

N0413N

Part No.

Package

Packing

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

V

40

V

Gate to Source Voltage (VDS = 0 V)

V

GSS

±20

V

Drain Current (DC) (TC = 25°C)

I

100

A

Drain Current (pulse)

I

D(pulse)

±400

A

Total Power Dissipation (TC = 25°C)

PT1

119

W

Total Power Dissipation (TA = 25°C)

PT2

1.5

W

Channel Temperature

T

150 °C

Storage Temperature

T

stg

−55 to +150

°C

Single Avalanche Current

IAS

55

A

Single Avalanche Energy

EAS

300

mJ

Item

Symbol

Max. Value

Unit

Channel to Case Thermal Resistance

R

1.05

C/W

Channel to Ambient Thermal Resistance

R

th(ch-A)

83.3

C/W

R07DS0555EJ0200

2020.06.10

N-channel MOSFET

40 V, 100 A, 3.3 mΩ

Features

Preliminary Data Sheet

Rev.2.00

• Low on-state resistance R

• Low C

• High current I

: C

iss

= 5550 pF TYP. (VDS = 25 V, VGS = 0 V)

iss

= ±100 A

D(DC)

= 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)

DS (on)

• RoHS Compliant

• Quality Grade : Standard

• Applications : For high current switching

Ordering Information

N0413N-ZK-E1-AY TO-263, Pb-free

Note: 1. Pb-free means that this product does not contain lead in the external electrode.

Note1

800 pcs / Tape and Reel

Absolute Maximum Ratings (TA = 25°C)

DSS

D(DC)

Note2

±

ch

Note3

Note3

Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a

reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of
Semiconductor Devices) and individual reliability data.

Notes: 2. PW ≤ 10

3. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 → 0 V, L = 100 µH

µ

s, Duty Cycle ≤ 1%

Thermal Resistance

Note4

°

th(ch-C)

Notes: 4. This data is the designed target maximum value on Renesas’s measurement condition. (Not tested)

°

R07DS0555EJ0200 Rev.2.00 Page 1 of 6

2020.6.10

N0413N Chapter Title

Item

Symbol

MIN.

TYP.

MAX.

Unit

Test Conditions

Zero Gate Voltage Drain Current

I

1 µA

VDS = 40 V, VGS = 0 V

Gate Leakage Current

I

±100

nA

VGS = ±20 V, VDS = 0 V

Gate to Source Cut-off Voltage

V

2.0 4.0

V

VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

Note5

| y

|

26 S VDS = 10 V, ID = 50 A

Input Capacitance

C

5550 pF

VDS = 25 V,

Output Capacitance

C

580 pF

VGS = 0 V,

Turn-on Delay Time

t

d(on)

29.0 ns

VDD = 20 V, ID = 50 A,

Rise Time

tr 15.0 ns

VGS = 10 V,

Turn-off Delay Time

t

d(off)

64.0 ns

RG = 0 Ω

Fall Time

tf 13.0 ns

Total Gate Charge

QG 100 nC

VDD = 32 V,

Gate to Source Charge

QGS 26 nC

VGS = 10 V,

Gate to Drain Charge

QGD 32 nC

ID = 100 A

Body Diode Forward Voltage

Note5

V

1.5

V

IF = 100 A, VGS = 0 V

Reverse Recovery Time

trr 40 ns

Reverse Recovery Charge

Qrr 44 nC

Electrical Characteristics (TA = 25°C)

DSS

GSS

GS(off)

R

fs

2.3 3.3 mΩ VGS = 10 V, ID = 50 A

DS(on)

iss

oss

320 pF f = 1 MHz

rss

F(S-D)

IF = 50 A, VGS = 0 V,
di/dt = 100 A/

µ

s

Drain to Source On-state Resistance

Note5

Reverse Transfer Capacitance C

Notes: 5. Pulsed test

R07DS0555EJ0200 Rev.2.00 Page 2 of 6

2020.6.10

N0413N Chapter Title

SAFE OPERATING AREA

CASE TEMPERATURE

Percentage of Rated Power

0

20

40

60

80

100

120

140

0 25 50 75

100 125

150

175

TC - Case Temperature - °C

0

20

40

60

80

100

120

140

0 25 50 75 100 125 150 175

0.1

1

10

100

1000

0.1

1 10

100

RDS(on) Limited

Power Dissipation Limited

TC = 25°C

PW = 300 µs

1 ms

10 ms

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

th(t)

- Transient Thermal Resistance -

C/W

Single pulse

R

= 83.3°C/W

R

= 1.05°C/W

N

Note6

Typical Characteristics

DERATING FACTOR OF FORWARD BIAS

TOTAL POWER DISSIPATION vs.

- %

- Total Power Dissipation - W

T

P

dT -

FORWARD BIAS SAFE OPERATING AREA

T

- Case Temperature - °C

C

- Drain Current - A

D

I

Notes: 6. Designed target value on Renesas measurement condition. (T

8. This data is the designed target maximum value on Renesas’s measurement condition.

R07DS0555EJ0200 Rev.2.00 Page 3 of 6

2020.6.10

7. This data is the designed value on Renesas’s measurement condition. Renesas recommends that operating conditions
are designed according to a document “Power MOSFET/IGBT Attention of Handling Semiconductor Devices (R07ZZ0010)”.

ote7

1000

Note8

°

100

10

1

0.1

0.01

0.1 m 1 m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

= 25°C, unless otherwise specified)

C

th(ch-A )

TA = 25°C

th(ch-C )

N0413N Chapter Title

DRAIN TO SOURCE VOLTAGE

CHARACTERISTICS

0

50

100

150

200

250

300

350

400

450

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

VGS = 10 V

Pulsed

VDS - Drain to Source Voltage - V

0.001

0.01

0.1

1

10

100

0 1 2 3 4 5

VDS = 10 V
Pulsed

TA = 125°C

75°C
25°C

−25°C

VGS - Gate to Source Voltage - V

vs. CHANNEL TEMPERATURE

DRAIN CURRENT

0

0.5

1

1.5

2

2.5

3

3.5

-50 0 50 100 150

VDS

= 10 V

I

D

= 1.0 mA

Forward Transfer Admittance

0.01

0.1

1

10

100

0.01 0.1 1 10 100

VDS = 10 V
Pulsed

TA = 125°C

75°C
25°C

-25°C

ID - Drain Current - A

vs. DRAIN CURRENT

vs. GATE TO SOURCE VOLTAGE

Drain to Source

0

1

2

3

4

5

1 10 100 1000

Pulsed

VGS = 10 V

ID - Drain Current - A

Drain to Source On

0

5

10

15

20

25

30

35

40

0 5 10 15

20

I

D

= 50 A

Pulsed

VGS - Gate to Source Voltage - V

-25℃

DRAIN CURRENT vs.

FORWARD TRANSFER

TC=125℃

75℃
25℃

-25℃

- Drain Current - A

D

I

GATE TO SOURCE CUT-OFF VOLTAGE

- Drain Current - A

D

I

FORWARD TRANSFER ADMITTANCE vs.

- S
TC=125℃

75℃
25℃

- Gate to Source Cut-off Voltage - V

GS(off)

V

T

DRAIN TO SOURCE ON-STATE RESISTANCE

On-state Resistance - mΩ

-

DS(on)

R

R07DS0555EJ0200 Rev.2.00 Page 4 of 6

2020.6.10

- Channel Temperature - °C

ch

| -

fs

| y

DRAIN TO SOURCE ON-STATE RESISTANCE

-state Resistance - mΩ

-

DS(on)

R

N0413N Chapter Title

vs. CHANNEL TEMPERATURE

SOURCE VOLTAGE

Drain to Source On

0

1

2

3

4

5

-50

0

50

100 150

V

GS

= 10 V

I

D

= 50 A

Pulsed

Tch - Channel Temperature - °C

10

100

1000

10000

0.1 1 10 100

V

GS

= 0 V

f = 1.0 MHz

C

rss

C

iss

C

oss

1

10

100

1000

0.1 1 10 100

V

DD

= 20 V

V

GS

= 10 V

R

G

= 0 Ω

t

d(on)

t

r

t

d(off)

t

f

0

2

4

6

8

10

12

14

0 20 40 60 80

100 120

I

D = 100 A

VDD

= 8 V

20 V
32 V

QG - Gate Charge - nC

VOLTAGE

REVERSE RECOVERY TIME vs.

0.01

0.1

1

10

100

1000

0 0.4 0.8 1.2 1.6

Pulsed

V

GS

= 10 V

0 V

Reverse Recovery Time

0.1

1

10

100

0.1 1

10 100

V

GS

= 0 V

di/dt = 100 A/µs

DRAIN TO SOURCE ON-STATE RESISTANCE

-state Resistance - mΩ

CAPACITANCE vs. DRAIN TO

- Capacitance - pF

rss

, C

oss

, C

iss

-

DS(on)

R

SWITCHING CHARACTERISTICS

C

V

- Drain to Source Voltage - V

DS

DYNAMIC INPUT CHARACTERISTICS

- Switching Time - ns

f

, t

d (off)

, t

r

, t

d (on)

t

I

- Drain Current - A

D

SOURCE TO DRAIN DIODE FORWARD

- Gate to Source Voltage - V

GS

V

DIODE FORWARD CURRENT

- ns

- Diode Forward Current - A

F

-

rr

t

I

V

- Source to Drain Voltage - V

F(S-D)

- Diode Forward Current - A

I

F

R07DS0555EJ0200 Rev.2.00 Page 5 of 6

2020.6.10

N0413N Chapter Title

Source

Body
Diode

Gate

Drain

1

2,4

3

Package Drawing (Unit: mm)

Equivalent Circuit

R07DS0555EJ0200 Rev.2.00 Page 6 of 6

2020.6.10

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13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: [phone], Fax: [phone]

Renesas Electronics Singapore Pte. Ltd.

80 Bendemeer Road, #06-02 Singapore 339949
Tel: [phone], Fax: [phone]

Renesas Electronics Malaysia Sdn.Bhd.

Unit No 3A-1 Level 3A Tower 8 UOA Business Park, No 1 Jalan Pengaturcara U1/51A, Seksyen U1, 40150
Shah Alam, Selangor, Malaysia
Tel: [phone], Fax: [phone]

Renesas Electronics India Pvt. Ltd.

No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India
Tel: [phone]

Renesas Electronics Korea Co., Ltd.

17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea
Tel: [phone], Fax: [phone]

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Colophon 9.0