LOW POWER
SRAMs
Advanced technology with superior performance
and industry-leading support
2020.10
HIGH PERFORMANCE AND
HIGH RELIABILITY USING
RENESAS’S ORIGINAL TECHNOLOGY
LOW POWER
SRAMs
Contents
Low Power SRAM Roadmap .......................................................................................................03
Industry-Leading Support, Application of Renesas Low Power SRAM ......................................03
Advanced Low Power SRAM Technology with Superior Performance and Reliability ..............04
Product Differentiation ................................................................................................................04
Product Benchmark .....................................................................................................................04
Package Lineup for Low Power SRAM ........................................................................................05
Low Power SRAM Part Name Decoder .......................................................................................05
Product List ..................................................................................................................................06
Low Power SRAM Roadmap
MP Now
■
02-03
MP New
SRAM type
Low Power
SRAM
■
Widest product lineup from 256Kbit to 64Mbit
■
Long term and stable support
■
Highest quality with Renesas core advanced technology
■
Easy switch to higher density in the same package
Density, Voltage CY2019 2020 2021 2022 2123 2024
256Kb 5V/3V, 1Mb 5V/3V,
2Mb 3V, 4Mb 5V
4Mb 3V, 8Mb 3V,
16Mb 3V, 32Mb 3V(16Mbx2)
16Mb 3V
32Mb 3V
64Mb 3V
0.15μm
MP Now
0.15μm 0.11μm Advanced LPSRAM
0.15μm Advanced LPSRAM
0.11μm Advanced LPSRAM
0.13μm (ECC embedded)
0.11μm Advanced LPSRAM
Industry-Leading Support,
Application of Renesas Low Power SRAM
■ Consumer (5%)
• Amusement
• Musical instrument
• Calculator, etc.
Car accessories (4%)
• ETC
• Data logger, etc.
■ Medical/Healthcare (2%)
■ Office Automation (6%)
• MFP, Server, etc.
■ Social Infra. (6%)
• Elevator
• Railway system, etc.
■ Telecom (8%)
• Router, Switch
• Base station, etc.
Source: Renesas Electronics, 2019
■ Industrial (69%)
• FA (PLC/CNC)
• POS
• ATM/Vending machine
• Security machine
• Measuring instrument, etc.
Advanced Low Power SRAM Technology with
Renesas’ Advanced LPSRAM Technology: 3D Image of Memory Cell
Stores larger amount of charge
Superior Performance and Reliability
■
Low standby current
■
High reliability
–Soft error free
–Latch-up free
Product Differentiation
2nd stacked structure:
Separate physical capacitor
(not parasitic capacitance)
1st stacked structure:
p-type TFT
(thin film transistor)
Infrastructure:
NMOS formed in Si substrate
Soft error free:
Latch-up free:
No parasitic PNPN-structure
in the substrate
Low standby current:
Optimized leakage current
of transistors
Production Soft error countermeasure:
Renesas supports soft error free products for entire lineup of 256Kbit to 64Mbit
Vendor Process 256Kb 1Mb 2Mb 4Mb 8Mb 16Mb 32Mb 64Mb
0.13μm CMOS ECC embedded
Renesas
Competitor
0.15μm Advanced
0.11μm Advanced
90nm CMOS no ECC
65nm CMOS ECC embedded
(5V)
(3V)
Change to 0.11μm Advanced
Yes No
Product Benchmark
Only Renesas supports unique products that realize both lowest standby current and soft error free
vs.
Standby current
vs.
Soft error rate
Renesas
0.11μm Advanced LPSRAM
0.3μA (4Mb, typ.) 3μA (4Mb, typ.)
Renesas
0.11μm Advanced LPSRAM
< 0.04 FIT / Mbit 500 to 1,000 FIT / Mbit
Competitor’s
65nm LPSRAM (with ECC)
Competitor’s
90nm LPSRAM (no ECC)
Package Lineup for Low Power SRAM
R1 L V 5256 E SA 5 S I #B1
Renesas Memory
Standby Current / Data Retention Current
Chip Configuration
Operating Voltage
Memory Density
04-05
28-pin
32-pin
44-pin
48-pin
(48-ball)
52-pin
SOP TSOP-I
256 Kb
1.27
17.5
1/4 Mb
1.27
20.75
11.93
0.55
14.1
0.5
0.5
256 Kb
13.4
1 Mb
20.0
8/16/32
64 Mb
20.0
TSOP-II
8.0
8.0
1/2/4
Mb
0.5
13.4
8.0
1.27
4 Mb
20.95
11.76
FBGAsTSOP μTSOP
x8
config.
x8 / x16
config.
9.5
8.0
16 Mb
(0.13μm)
12.0
2/4/8 Mb
0.8
18.41
11.76
8/16/32
64 Mb
0.4
10.79
10.49
4/8/16/32
8.5
64 Mb
(0.11μm)
7.5
■
Renesas provides 6 kinds of common packages, which are upward compatible, making it easy to expand density without changing the PCB.
Low Power SRAM Part Name Decoder
R1 L P 04 08 D SP --5 S I #B0
L
LPSRAM, Single chip
W
LPSRAM, Two chips
V
3V
P
5V
5256
01
02
04
08
16
32
64
RM 1#AS 2- 4L V 04 16 E G SB A
256Kb (x8)
1Mb
2Mb
4Mb
8Mb
16Mb
32Mb
64Mb
Bus Width
08
x8
16
x16
Chip Generation
Industrial Grade
Package Type
SA
TSOP-I (256Kb/8Mb/16Mb/32Mb/64Mb)
sTSOP (1Mb/2Mb/4Mb)
SB
TSOP-II
SD
µTSOP
SF
TSOP-I (1Mb)
SP
SOP (256Kb, 4Mb)
SN
SOP (1Mb)
BG
FBGA
Environment
A
Pb free (pure-Tin plating)
C
Pb free (non pure-Tin plating)
Operating Temperature
R
0 to 70˚C
I
-40 to 85˚C
2
-40 to 85˚C
Access Time
5
4
Packing, Environmental
#B0 / #B1
#S0 / #S1
Packing
A
Tray
C
Tube
H
Embossed Tape (TSOP, µTSOP, SOP)
K
Embossed Tape (FBGA, sTSOP)
L
Standard
S
55 ns
45 ns
Low power version
Packing Environmental
Tray or Tube Pb free
Embossed Tape Pb free
Assembly Site Rev., etc.
0
Rev. Code
1
Rev. Code
Product List
Process Density Configuration Part Name Package Access Time Voltage Temperature
R1LP5256ESP SOP (28) 55ns 4.5V to 5.5V -40 to 85°C
0.15μm
Advanced
0.15μm
Advanced
0.15μm
Advanced
0.15μm
Advanced
0.11μm
Advanced
0.11μm
Advanced
0.13μm
CMOS
0.11μm
Advanced
0.11μm
Advanced
0.11μm
Advanced
0.11μm
Advanced
256Kbit 32K x 8
1Mbit 128K x 8
2Mbit
4Mbit 512K x 8
4Mbit
8Mbit
16Mbit
(with ECC)
16Mbit
32Mbit
32Mbit 2M x 16 RMWV3216AGBG FBGA (48) 55ns 2.7V to 3.6V -40 to 85°C
64Mbit
256K x 8 R1LV0208BSA sTSOP (32) 55ns 2.7V to 3.6V -40 to 85°C
128K x 16 R1LV0216BSB TSOP-II (44) 55ns 2.7V to 3.6V -40 to 85°C
512K x 8
256K x 16
1M x 8 RMLV0808BGSB TSOP-II (44)
512K x 16
512K x 16 / 1M x 8
1M x 16 / 2M x 8 R1LV1616HSA TSOP-I (48) 45ns 2.7V to 3.6V -40 to 85°C
1M x 16 R1LV1616HBG FBGA (48) 45ns 2.7V to 3.6V -40 to 85°C
1M x 16 / 2M x 8
1M x 16 RMLV1616AGBG FBGA (48) 55ns 2.7V to 3.6V -40 to 85°C
2M x 16 / 4M x 8
2M x 16 RMLV3216AGBG FBGA (48) 55ns 2.7V to 3.6V -40 to 85°C
4M x 16 / 8M x 8
4M x 16 RMWV6416AGBG FBGA (48) 55ns 2.7V to 3.6V -40 to 85°C
R1LP5256ESA TSOP-I (28) 55ns 4.5V to 5.5V -40 to 85°C
R1LV5256ESP SOP (28) 55ns 2.7V to 3.6V -40 to 85°C
R1LV5256ESA TSOP-I (28) 55ns 2.7V to 3.6V -40 to 85°C
R1LP0108ESN SOP (32) 55ns 4.5V to 5.5V -40 to 85°C
R1LP0108ESF TSOP-I (32) 55ns 4.5V to 5.5V -40 to 85°C
R1LP0108ESA sTSOP (32) 55ns 4.5V to 5.5V -40 to 85°C
R1LV0108ESN SOP (32) 55ns 2.7V to 3.6V -40 to 85°C
R1LV0108ESF TSOP-I (32) 55ns 2.7V to 3.6V -40 to 85°C
R1LV0108ESA sTSOP (32) 55ns 2.7V to 3.6V -40 to 85°C
R1LP0408DSP SOP (32) 55ns 4.5V to 5.5V -40 to 85°C
R1LP0408DSB TSOP-II (32) 55ns 4.5V to 5.5V -40 to 85°C
RMLV0408EGSP SOP (32) 45ns 2.7V to 3.6V -40 to 85°C
RMLV0408EGSB TSOP-II (32) 45ns 2.7V to 3.6V -40 to 85°C
RMLV0408EGSA sTSOP (32) 45ns 2.7V to 3.6V -40 to 85°C
RMLV0414EGSB TSOP-II (44) 45ns 2.7V to 3.6V -40 to 85°C
RMLV0416EGSB TSOP-II (44) 45ns 2.7V to 3.6V -40 to 85°C
RMLV0416EGBG FBGA (48) 45ns 2.7V to 3.6V -40 to 85°C
45ns 2.7V to 3.6V -40 to 85°C
55ns 2.4V to 3.6V -40 to 85°C
RMLV0816BGSB TSOP-II (44)
RMLV0816BGBG FBGA (48)
RMLV0816BGSA TSOP-I (48)
RMLV0816BGSD μTSOP (52)
RMLV1616AGSA TSOP-I (48) 55ns 2.7V to 3.6V -40 to 85°C
RMLV1616AGSD μTSOP (52) 55ns 2.7V to 3.6V -40 to 85°C
RMLV3216AGSA TSOP-I (48) 55ns 2.7V to 3.6V -40 to 85°C
RMLV3216AGSD μTSOP (52) 55ns 2.7V to 3.6V -40 to 85°C
RMWV6416AGSA TSOP-I (48) 55ns 2.7V to 3.6V -40 to 85°C
RMWV6416AGSD μTSOP (52) 55ns 2.7V to 3.6V -40 to 85°C
45ns 2.7V to 3.6V -40 to 85°C
55ns 2.4V to 3.6V -40 to 85°C
45ns 2.7V to 3.6V -40 to 85°C
55ns 2.4V to 3.6V -40 to 85°C
45ns 2.7V to 3.6V -40 to 85°C
55ns 2.4V to 3.6V -40 to 85°C
45ns 2.7V to 3.6V -40 to 85°C
55ns 2.4V to 3.6V -40 to 85°C
MEMO
06-07
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the
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(Rev.4.0-1 November 2017)
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© 2020 Renesas Electronics Corporation.
Document No. R10CP0007EJ0200
All rights reserved.
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