RENESAS HZS-N Technical data
HZS-N Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0185-0100Z
(Previous: ADE-208-1 24)
Rev.1.00
Mar.11.2004
Features
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
• Wide spec trum from 1.88 V through 38.52 V of zener voltage provide fl exible app lication.
• Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No. Mark Package Code
HZS-N Series Type No. MHD
Pin Arrangement
B
7.5
1
2
Type No.
Cathode band
1. Cathode
2. Anode
2
Rev.1.00, Mar.11.2004, page 1 of 6
HZS-N Series
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd 400 mW
Junction temperature Tj 200 °C
Storage temperature Tstg −55 to +175 °C
Electrical Characteristics
(Ta = 25°C)
Type
HZS4.3N
HZS4.7N
HZS5.1N
HZS5.6N
HZS6.2N
HZS6.8N
Note: 1. Tested with pulse (PW = 40 ms)
Grade
B1 1.88 2.10 HZS2.0N
B2 2.02 2.20
B1 2.12 2.30 HZS2.2N
B2 2.22 2.41
B1 2.33 2.52 HZS2.4N
B2 2.43 2.63
B1 2.54 2.75 HZS2.7N
B2 2.69 2.91
B1 2.85 3.07 HZS3.0N
B2 3.01 3.22
B1 3.16 3.38 HZS3.3N
B2 3.32 3.53
B1 3.47 3.68 HZS3.6N
B2 3.62 3.83
B1 3.77 3.98 HZS3.9N
B2 3.92 4.14
B1 4.05 42.6
B2 4.20 4.40
B3 4.34 4.53
B1 4.47 4.65
B2 4.59 4.77
B3 4.71 4.91
B1 4.85 5.03
B2 4.97 5.18
B3 5.12 5.35
B1 5.29 5.52
B2 5.46 5.70
B3 5.64 5.88
B1 5.81 6.06
B2 5.99 6.24
B3 6.16 6.40
B1 6.32 6.59
B2 6.52 6.79
B3 6.70 6.97
Zener Voltage Reverse Current Dynamic Resistance
V
(V)*1
Z
Min Max I
Test
Condition IR (µA)
(mA) Max VR (V) Max IZ (mA)
Z
5 120 0.5 100 5
5 120 0.7 100 5
5 120 1.0 100 5
5 100 1.0 110 5
5 50 1.0 120 5
5 20 1.0 120 5
5 10 1.0 120 5
5 5 1.0 120 5
5 5 1.0 120 5
5 5 1.0 100 5
5 5 1.5 70 5
5 5 2.5 40 5
5 5 3.0 30 5
5 2 3.5 25 5
Test
Condition rd (Ω)
Test
Condition
Rev.1.00, Mar.11.2004, page 2 of 6
HZS-N Series
Type
HZS7.5N
Grade
B1 6.88 7.19
B2 7.11 7.41
B3 7.33 7.64
HZS8.2N
B1 7.56 7.90
B2 7.82 8.15
B3 8.07 8.41
HZS9.1N
B1 8.33 8.70
B2 8.61 8.99
B3 8.89 9.29
HZS10N
B1 9.19 9.59
B2 9.48 9.90
B3 9.82 10.30
HZS11N
B1 10.18 10.63
B2 10.50 10.95
B3 10.82 11.26
HZS12N
B1 11.13 11.63
B2 11.50 11.92
B3 11.80 12.30
HZS13N
B1 12.18 12.71
B2 12.59 13.16
B3 13.03 13.62
HZS15N
B1 13.48 14.09
B2 13.95 14.56
B3 14.42 15.02
HZS16N
B1 14.87 15.50
B2 15.33 15.96
B3 15.79 16.50
HZS18N
B1 16.34 17.06
B2 16.90 17.67
B3 17.51 18.30
HZS20N
B1 18.14 18.96
B2 18.80 19.68
B3 19.52 20.45
HZS22N
B1 20.23 21.08
B2 20.76 21.65
B3 21.22 22.09
B4 21.68 22.61
HZS24N
B1 22.26 23.12
B2 22.75 23.73
B3 23.29 24.27
B4 23.81 24.81
HZS27N
B1 24.26 25.52
B2 24.97 26.26
B3 25.63 26.95
B4 26.29 27.64
Note: 1. Tested with pulse (PW = 40 ms)
Zener Voltage Reverse Current Dynamic Resistance
V
(V)*1
Z
Min Max IZ (mA) Max VR (V) Max IZ (mA)
(Ta = 25°C)
Test
Condition IR (µA)
Test
Condition rd (Ω)
Test
Condition
5 0.5 4.0 25 5
5 0.5 5.0 20 5
5 0.5 6.0 20 5
5 0.2 7.0 20 5
5 0.2 8.0 20 5
5 0.2 9.0 25 5
5 0.2 10 25 5
5 0.2 11 25 5
5 0.2 12 25 5
5 0.2 13 30 5
5 0.2 15 30 5
5 0.2 17 30 5
5 0.2 19 35 5
5 0.2 21 45 5
Rev.1.00, Mar.11.2004, page 3 of 6
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