RENESAS HZS-L User Manual
HZS-L Series
Silicon Epitaxial Planar Zener Diode for
Low Noise Application
REJ03G0166-0200Z
(Previous: ADE-208-1 21 A)
Rev.2.00
Jan.06.2004
Features
• Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
• Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
• Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No. Mark Package Code
HZS-L Series Type No. MHD
Pin Arrangement
B
7
1
2
Type No.
Cathode band
1. Cathode
2. Anode
2
Rev.2.00, Jan.06.2003, page 1 of 6
HZS-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd 400 mW
Junction temperature Tj 200 °C
Storage temperature Tstg –55 to +175 °C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
V
(V)*1
Z
Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZS6L A1 5.2 5.5 0.5 1 2.0 150 0.5
A2 5.3 5.6
A3 5.4 5.7
B1 5.5 5.8 80 0.5
B2 5.6 5.9
B3 5.7 6.0
C1 5.8 6.1 60 0.5
C2 6.0 6.3
C3 6.1 6.4
HZS7L A1 6.3 6.6 0.5 1 3.5 60 0.5
A2 6.4 6.7
A3 6.6 6.9
B1 6.7 7.0
B2 6.9 7.2
B3 7.0 7.3
C1 7.2 7.6
C2 7.3 7.7
C3 7.5 7.9
Note: 1. Tested with DC.
Test
Condition IR (µA)
Test
Condition rd (Ω)
Test
Condition
Rev.2.00, Jan.06.2003, page 2 of 6
HZS-L Series
Zener Voltage Reverse Current Dynamic Resistance
V
(V)*1
Z
Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZS9L A1 7.7 8.1 0.5 1 6.0 60 0.5
A2 7.9 8.3
A3 8.1 8.5
B1 8.3 8.7
B2 8.5 8.9
B3 8.7 9.1
C1 8.9 9.3
C2 9.1 9.5
C3 9.3 9.7
HZS11L A1 9.5 9.9 0.5 1 8.0 80 0.5
A2 9.7 10.1
A3 9.9 10.3
B1 10.2 10.6
B2 10.4 10.8
B3 10.7 11.1
C1 10.9 11.3
C2 11.1 11.6
C3 11.4 11.9
HZS12L A1 11.6 12.1 0.5 1 10.5 80 0.5
A2 11.9 12.4
A3 12.2 12.7
B1 12.4 12.9
B2 12.6 13.1
B3 12.9 13.4
C1 13.2 13.7
C2 13.5 14.0
C3 13.8 14.3
HZS15L 1 14.1 14.7 0.5 1 13.0 80 0.5
2 14.5 15.1
3 14.9 15.5
HZS16L 1 15.3 15.9 0.5 1 14.0 80 0.5
2 15.7 16.5
3 16.3 17.1
Note: 1. Tested with DC.
Test
Condition IR (µA)
Test
Condition rd (Ω)
Test
Condition
Rev.2.00, Jan.06.2003, page 3 of 6
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