Renesas HZB6.8MWA Schematic [ru]

HZB6.8MWA

Silicon Planar Zener Diode for Surge Absorb

(Previous: ADE-208-9 71 A)

Features

• HZB6.8MWA has two devices in a monolithic, and can absorb surge.

• CMPAK Package is suitable for high density surface mounting and high speed assembly.

Ordering Information

REJ03G1256-0200

Rev.2.00

Sep 13, 2005

Type No.

HZB6.8MWA 68M CMPAK PTSP0003ZB-A

Pin Arrangement

Laser Mark

3

2

(Top View)

Package Name

1

1. Cathode

2. Cathode

3. Anode

Package Code

(Previous Code)

(CMPAK)

Rev.2.00 Sep 13, 2005 page 1 of 4

HZB6.8MWA

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Value Unit

Power dissipation Pd * 200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note: Two device total, See Fig.2.

Electrical Characteristics *1

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Zener voltage VZ 6.47 — 7.0 V IZ = 5 mA, 40 ms pulse
Reverse current IR — — 2 µA VR = 3.5 V
Capacitance C — — 130 pF VR = 0 V, f = 1 MHz
Dynamic resistance rd — — 30 Ω IZ = 5 mA
ESD-Capability *2 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward

and reverse direction 10 pulse

Notes: 1. Per one device

2. Failure criterion ; IR > 2 µA at VR = 3.5 V.

Rev.2.00 Sep 13, 2005 page 2 of 4