Renesas HSG2005 User Manual

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HSG2005

SiGe HBT
High Frequency Medium Power Amplifier

Features

• High Transition Frequency

f

= 28.5 GHz typ.

T

• Low Distortion and Excellent Linearity

P1dB at output = +21 dBm typ. f = 5.8 GHz

• High Collector to Emitter Voltage

V

= 5 V

CEO

• Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.

Outline

Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)

9

4

5

6

7

3

2

8

1

Note: Marking is “2005”.

7

8

6

2005

9

5

4

3

2

1

1. Collecto

2. Collecto

3. Collecto

4. Emitter

5. Emitter

6. Base

7. Emitter

8. Emitter

9. Emitter

REJ03G0485-0400

Rev.4.00

Jun 21, 2006

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current IC 400 mA
Collector power dissipation Pc 1.2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Value on PCB (40 x 40 x 1.0 mm)

12 V

CBO

5 V

CEO

1.2 V

EBO

Note

W

Rev.4.00 Jun 21, 2006 page 1 of 12

HSG2005

0

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

DC current transfer ratio hFE 150 220 300  VCE = 3 V, IC = 100 mA
Reverse Transfer Capacitance Cre   0.4 pF

Transition Frequency fT  28.5  GHz

Maximum Stable Gain MSG 10.5 12.5  dB

Maximum Available Gain MAG  17.0  dB

Maximum Available Gain MAG  9.0  dB

Power Gain PG  8.0  dB
1dB Compression Point at output

P1dB  +21  dBm

Saturation Output Power Po(sat)  +23  dBm

VCB = 3 V, IE = 0, f = 1 MHz,
emitter grounded

VCE = 3 V, IC = 100 mA,
f = 1 GHz

VCE = 3 V, IC = 100 mA,
f = 5.8 GHz

VCE = 3 V, IC = 100 mA,
f = 2.4 GHz

VCE = 3 V, IC = 100 mA,
f = 5.8 GHz

VCE = 3.6 V, I

= 100 mA,

idle

f = 5.8 GHz, Pin = +13 dBm

= 3.6 V, I

V

CE

= 100 mA,

idle

f = 5.8 GHz
VCE = 3.6 V, I

= 100 mA,

idle

f = 5.8 GHz, Pin = +13 dBm

Main Characteristics

Collector Power Dissipation Curve

1800

(mW)

*

1200

600

Collector Power Dissipation Pc

0 50 100 150 20

*(4 x 4 x 1mm) on PCB

Ambient Temperature Ta (°C)

Rev.4.00 Jun 21, 2006 page 2 of 12

HSG2005

100

(mA)

C

Typical Transfer Characteristics

VCE = 3 V

80

60

(-)

FE

DC Current Transfer Ratio vs.

Collector Current

300

VCE = 3 V

200

40

20

Collector Current I

0 0.2 0.4 0.6 0.8 1.0

Base to Emitter Voltage VBE (V)

Reverse Transfer Capacitanse vs.

Collector to Base Voltage

1.0

(pF)

re

0.8

0.6

0.4

0.2

0.0
0123

Reverse Transfer Capacitanse C

I
f = 1 MHz

Collector to Base Voltage VCB (V)

100

DC Current Transfer Ratio h

0

1 10 1000

100

Collector Current IC (mA)

Transition Frequency vs.

Collector Current

= 0

E

40

(GHz)

30

T

20

10

VCE = 3 V
f = 1 GHz

Transition Frequency f

0

4

5

1 10 100 1000

Collector Current IC (mA)

Maximum Stable Gain, Maximum Available Gain

vs. Collector Current

30

VCE = 3 V
MAG

25

MSG

20

15

10

5

Maximum Stable Gain MSG (dB)

0

Maximum Available Gain MAG (dB)

1 10 100 1000

Collector Current I

Rev.4.00 Jun 21, 2006 page 3 of 12

C

f = 1 GHz

1.8 GHz

2.4 GHz

5.2 GHz

5.8 GHz

(mA)

S

Parameter, Maximum Stable Gain,

21

Maximum Available Gain vs. Frequency

40

MSG

(dB)

2

|

|S

Parameter

S

30

21

20

10

21

Maximum Stable Gain MSG (dB)

VCE = 3 V
I

= 100 mA

C

0

Maximum Available Gain MAG (dB)

0.1 1 10

|S21|

2

Frequency f (GHz)

MAG

HSG2005

2.4 GHz Characteristics

Evaluation Board Circuit

VBB : Bias Control

IN

Pin - Pout Characteristics

P

- P

in

30

VCC = 3.6 V
I

25

20

= 50 mA

idle

f = 2.4 GHz

(dBm)

15

out

10

5

0

Power Gain PG (dB)

Output Power P

-5

-10

-20

-10

*1 µF

Characteristics

out

C : 1 to 2 pF

P

out

PG

I

op

10 200

1000 pF

C : 1 pF

10 pF

L : 5.6 nH

L : 1.5 nH

400

350

300

250

200

150

100

50

0

(mA)

op

I

27 Ω

VCC

10 pF

L : 10 nH

L : 1.8 nH

1000 pF

C : 1 pF

*1 µF

OUT

C : 0.9 pF

3rd. Order Intermodulation Distortion (IMD3)

40

VCE = 3.6 V

30

I

= 50 mA

idle

f = 2.4 GHz

20

10

Fundamental

0

-10

/ IMD3 (dBm)

-20

out

P

-30

-40

-50

(1tone)

IMD3

(2tone: ∆f = 1MHz)

-40 0 40-20-60

20

Input Power P

S parameter vs. Frequency

20

VCE = 3.6 V
I

= 50 mA

C

10

0

-10

-20

S parameter (dB)

-30

-40

S22

1.5 3.0 4.02.51.0

(dBm)

in

S21

S11

S12

2.0 3.5

Frequency f (GHz)

Input Power Pin (dBm)

S parameter vs. Frequency

20

10

0

-10

-20

S21

S22

S parameter (dB)

-30

-40

S12

1.0

1.5 3.0 4.02.5

VCE = 3.6 V
I

C

S11

2.0 3.5

Frequency f (GHz)

= 150 mA

Rev.4.00 Jun 21, 2006 page 4 of 12