Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current IC 400 mA
Collector power dissipation Pc 1.2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Value on PCB (40 x 40 x 1.0 mm)
12 V
CBO
5V
CEO
1.2 V
EBO
Note
W
Rev.4.00 Jun 21, 2006 page 1 of 12
HSG2005
0
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
DC current transfer ratio hFE 150 220 300 VCE = 3 V, IC = 100 mA
Reverse Transfer Capacitance Cre 0.4 pF
Transition Frequency fT 28.5 GHz
Maximum Stable Gain MSG 10.5 12.5 dB
Maximum Available Gain MAG 17.0 dB
Maximum Available Gain MAG 9.0 dB
Power Gain PG 8.0 dB
1dB Compression Point at output
P1dB +21 dBm
Saturation Output Power Po(sat) +23 dBm
VCB = 3 V, IE = 0, f = 1 MHz,
emitter grounded
VCE = 3 V, IC = 100 mA,
f = 1 GHz
VCE = 3 V, IC = 100 mA,
f = 5.8 GHz
VCE = 3 V, IC = 100 mA,
f = 2.4 GHz
VCE = 3 V, IC = 100 mA,
f = 5.8 GHz
VCE = 3.6 V, I
= 100 mA,
idle
f = 5.8 GHz, Pin = +13 dBm
= 3.6 V, I
V
CE
= 100 mA,
idle
f = 5.8 GHz
VCE = 3.6 V, I
= 100 mA,
idle
f = 5.8 GHz, Pin = +13 dBm
Main Characteristics
Collector Power Dissipation Curve
1800
(mW)
*
1200
600
Collector Power Dissipation Pc
05010015020
*(4 x 4 x 1mm) on PCB
Ambient Temperature Ta (°C)
Rev.4.00 Jun 21, 2006 page 2 of 12
HSG2005
100
(mA)
C
Typical Transfer Characteristics
VCE = 3 V
80
60
(-)
FE
DC Current Transfer Ratio vs.
Collector Current
300
VCE = 3 V
200
40
20
Collector Current I
00.20.40.60.81.0
Base to Emitter Voltage VBE (V)
Reverse Transfer Capacitanse vs.
Collector to Base Voltage
1.0
(pF)
re
0.8
0.6
0.4
0.2
0.0
0123
Reverse Transfer Capacitanse C
If = 1 MHz
Collector to Base Voltage VCB (V)
100
DC Current Transfer Ratio h
0
1101000
100
Collector Current IC (mA)
Transition Frequency vs.
Collector Current
= 0
E
40
(GHz)
30
T
20
10
VCE = 3 V
f = 1 GHz
Transition Frequency f
0
4
5
1101001000
Collector Current IC (mA)
Maximum Stable Gain, Maximum Available Gain
vs. Collector Current
30
VCE = 3 V
MAG
25
MSG
20
15
10
5
Maximum Stable Gain MSG (dB)
0
Maximum Available Gain MAG (dB)
1101001000
Collector Current I
Rev.4.00 Jun 21, 2006 page 3 of 12
C
f = 1 GHz
1.8 GHz
2.4 GHz
5.2 GHz
5.8 GHz
(mA)
S
Parameter, Maximum Stable Gain,
21
Maximum Available Gain vs. Frequency
40
MSG
(dB)
2
|
|S
Parameter
S
30
21
20
10
21
Maximum Stable Gain MSG (dB)
VCE = 3 V
I
= 100 mA
C
0
Maximum Available Gain MAG (dB)
0.1110
|S21|
2
Frequency f (GHz)
MAG
HSG2005
2.4 GHz Characteristics
Evaluation Board Circuit
VBB : Bias Control
IN
Pin - Pout Characteristics
P
- P
in
30
VCC = 3.6 V
I
25
20
= 50 mA
idle
f = 2.4 GHz
(dBm)
15
out
10
5
0
Power Gain PG (dB)
Output Power P
-5
-10
-20
-10
*1 µF
Characteristics
out
C : 1 to 2 pF
P
out
PG
I
op
10200
1000 pF
C : 1 pF
10 pF
L : 5.6 nH
L : 1.5 nH
400
350
300
250
200
150
100
50
0
(mA)
op
I
27 Ω
VCC
10 pF
L : 10 nH
L : 1.8 nH
1000 pF
C : 1 pF
*1 µF
OUT
C : 0.9 pF
3rd. Order Intermodulation Distortion (IMD3)
40
VCE = 3.6 V
30
I
= 50 mA
idle
f = 2.4 GHz
20
10
Fundamental
0
-10
/ IMD3 (dBm)
-20
out
P
-30
-40
-50
(1tone)
IMD3
(2tone: ∆f = 1MHz)
-40040-20-60
20
Input Power P
S parameter vs. Frequency
20
VCE = 3.6 V
I
= 50 mA
C
10
0
-10
-20
S parameter (dB)
-30
-40
S22
1.53.04.02.51.0
(dBm)
in
S21
S11
S12
2.03.5
Frequency f (GHz)
Input Power Pin (dBm)
S parameter vs. Frequency
20
10
0
-10
-20
S21
S22
S parameter (dB)
-30
-40
S12
1.0
1.53.04.02.5
VCE = 3.6 V
I
C
S11
2.03.5
Frequency f (GHz)
= 150 mA
Rev.4.00 Jun 21, 2006 page 4 of 12
HSG2005
5.8 GHz Characteristics
Evaluation Board Circuit
VBB : Bias Control
Pin - Pout Characteristics
P
- P
in
25
VCC = 3.6 V
I
= 100 mA
idle
20
f = 5.8 GHz
(dBm)
out
15
10
Power Gain PG (dB)
Output Power P
5
0
0
5
*1 µF
IN
Characteristics
out
P
out
1000 pF
0.5 pF
I
PG
152010
op
2 pF
10 pF
0.2 pF
250
200
150
100
50
0
27 Ω
(mA)
op
I
VCC
10 pF
0.5 pF
1000 pF
2 pF
0.4 pF
*1 µF
OUT
3rd. Order Intermodulation Distortion (IMD3)
40
VCE = 3.6 V
30
I
= 100 mA
idle
f = 5.8 GHz
20
10
Fundamental
0
-10
/ IMD3 (dBm)
-20
out
P
-30
-40
-50
(1tone)
IMD3
(2tone: ∆f = 1MHz)
-40040-20-60
20
Input Power P
S parameter vs. Frequency
10
S21
0
-10
S parameter (dB)
-20
-30
S22
S12
57864
(dBm)
in
VCE = 3.6 V
I
C
S11
Frequency f (GHz)
= 100 mA
Input Power Pin (dBm)
S parameter vs. Frequency
10
S21
0
-10
S parameter (dB)
-20
-30
S22
S12
57864
VCE = 3.6 V
I
= 150 mA
C
S11
Frequency f (GHz)
Rev.4.00 Jun 21, 2006 page 5 of 12
HSG2005
S
Parameter vs. Frequency
11
1
.4
.2
0
-.2
.2
-.4
Condition: V
.8
.6
.6
.4
.8
-.6
-.8
-1
= 3 V, IC= 100 mA, Zo = 50 Ω
CE
1.5
2
3
4
5
10
1.5
234
1
-1.5
10
5
-10
-5
-4
-3
-2
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
Parameter vs. Frequency
S
21
Scale: 20 / div.
60°
-30°
-60°
150°
180°
-150°
Condition: V
90°
120°
-120°
CE
-90°
= 3 V, IC = 100 mA, Zo = 50 Ω
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
30°
0°
Parameter vs. FrequencyS22 Parameter vs. Frequency
S
150°
180°
-150°
Condition: V
12
120°
-120°
CE
-90°
= 3 V, IC = 100 mA, Zo = 50 Ω
90°
Scale: 0.04 / div.
60°
30°
-30°
-60°
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
1
.8
.6
.4
.2
0°
0
-.2
.2
-.4
Condition: V
.6
.4
.8
-.6
-.8
-1
= 3 V, IC = 100 mA, Zo = 50 Ω
CE
1.5
2
3
4
5
10
1.5
234
1
-1.5
10
5
-10
-5
-4
-3
-2
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
Rev.4.00 Jun 21, 2006 page 6 of 12
HSG2005
Ω
Ω
S
Parameter vs. Frequency
11
1
.4
.2
0
-.2
.2
-.4
Condition: V
.8
.6
.6
.4
.8
-.6
-.8
-1
= 3.3 V, IC = 100 mA, Zo = 50 Ω
CE
1.5
2
3
4
5
10
1.5
234
1
-1.5
10
5
-10
-5
-4
-3
-2
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
Parameter vs. Frequency
S
21
Scale: 20 / div.
60°
-30°
-60°
150°
180°
-150°
Condition: V
90°
120°
-120°
-90°
= 3.3 V, IC = 100 mA, Zo = 50
CE
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
30°
0°
Parameter vs. FrequencyS22 Parameter vs. Frequency
S
150°
180°
-150°
Condition: V
12
120°
-120°
CE
-90°
= 3.3 V, IC = 100 mA, Zo = 50 Ω
Scale: 0.04 / div.
90°
60°
30°
-30°
-60°
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
1
.8
.6
.4
.2
0°
0
-.2
.2
-.4
Condition: V
.6
.4
.8
-.6
-.8
-1
= 3.3 V, IC = 100 mA, Zo = 50
CE
1.5
2
3
4
5
10
1.5
234
1
-1.5
10
5
-10
-5
-4
-3
-2
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
Rev.4.00 Jun 21, 2006 page 7 of 12
HSG2005
Ω
Ω
S
Parameter vs. Frequency
11
1
.4
.2
0
-.2
.2
-.4
Condition: V
.8
.6
.6
.4
.8
-.6
-.8
-1
= 3.6 V, IC = 100 mA, Zo = 50 Ω
CE
1.5
2
3
4
5
10
1.5
234
1
-1.5
10
5
-10
-5
-4
-3
-2
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
Parameter vs. Frequency
S
21
Scale: 20 / div.
60°
-30°
-60°
150°
180°
-150°
Condition: V
90°
120°
-120°
-90°
= 3.6 V, IC = 100 mA, Zo = 50
CE
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
30°
0°
Parameter vs. FrequencyS22 Parameter vs. Frequency
S
150°
180°
-150°
Condition: V
12
120°
-120°
CE
-90°
= 3.6 V, IC = 100 mA, Zo = 50 Ω
Scale: 0.04 / div.
90°
60°
30°
-30°
-60°
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
1
.8
.6
.4
.2
0°
0
-.2
.2
-.4
Condition: V
.6
.4
.8
-.6
-.8
-1
= 3.6 V, IC = 100 mA, Zo = 50
CE
1.5
2
3
4
5
10
1.5
234
1
-1.5
10
5
-10
-5
-4
-3
-2
100 to 3000 MHz (100 MHz Step)
3200 to 6000 MHz (200 MHz Step)
HSG2005TB-E 2000 pcs. φ178 mm Reel, 8 mm Emboss taping
Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is
applied.
Contact Renesas sales office for any question regarding recommended soldering conditio n of Renesas.
Rev.4.00 Jun 21, 2006 page 12 of 12
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
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5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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