Renesas HSG2004 User Manual
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HSG2004
SiGe HBT
High Frequency Medium Power Amplifier
Features
• High Transition Frequency
f
= 30 GHz typ.
T
• Low Distortion and Excellent Linearity
P1dB at output = +14.5 dBm typ. f = 5.8 GHz
• High Collector to Emitter Voltage
V
= 5 V
CEO
• Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
Outline
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
9
4
5
6
7
3
2
8
1
Note: Marking is “2004”.
7
8
6
2004
9
5
4
3
2
1
1. Collecto
2. Collecto
3. Collecto
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
REJ03G0484-0400
Rev.4.00
Jun 21, 2006
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current IC 200 mA
Collector power dissipation Pc 1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Value on PCB (40 x 40 x 1.0 mm)
12 V
CBO
5 V
CEO
1.2 V
EBO
Note
W
Rev.4.00 Jun 21, 2006 page 1 of 12
HSG2004
0
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
DC current transfer ratio hFE 170 240 320 VCE = 3 V, IC = 30 mA
Reverse Transfer Capacitance
0.6 pF
C
re
Transition Frequency fT 30.0 GHz
Maximum Stable Gain MSG 14 15.5 dB
Maximum Available Gain MAG 21 dB
Maximum Available Gain MAG 12 dB
Power Gain PG 11.5 dB
1dB Compression Point at output
P1dB +14.5 dBm
Saturation Output Power Po(sat) +22 dBm
VCB = 3 V, IE = 0, f = 1 MHz,
emitter grounded
VCE = 3 V, IC = 30 mA,
f = 1 GHz
VCE = 3 V, IC = 30 mA,
f = 5.8 GHz
VCE = 3 V, IC = 30 mA,
f = 2.4 GHz
VCE = 3 V, IC = 30 mA,
f = 5.8 GHz
VCE = 3.6 V, I
= 30 mA,
idle
f = 5.8 GHz, Pin = +0 dBm
= 3.6 V, I
V
CE
= 30 mA,
idle
f = 5.8 GHz
VCE = 3.6 V, I
= 30 mA,
idle
f = 5.8 GHz, Pin = +0 dBm
Main Characteristics
Collector Power Dissipation Curve
1500
(mW)
*
1000
500
Collector Power Dissipation Pc
0 50 100 150 20
*(4 x 4 x 1mm) on PCB
Ambient Temperature T
a
(°C)
Rev.4.00 Jun 21, 2006 page 2 of 12
HSG2004
100
(mA)
C
Typical Transfer Characteristics
VCE = 3 V
80
60
40
(-)
FE
DC Current Transfer Ratio vs.
Collector Current
400
VCE = 3 V
300
200
20
Collector Current I
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Reverse Transfer Capacitanse vs.
Collector to Base Voltage
0.5
(pF)
re
0.4
0.3
0.2
0.1
0
Reverse Transfer Capacitanse C
1234
I
E
f = 1 MHz
Collector to Base Voltage VCB (V)
= 0
100
DC Current Transfer Ratio h
0
1 10 100
Collector Current IC (mA)
Transition Frequency vs.
Collector Current
40
VCE = 3 V
f = 1 GHz
(GHz)
30
T
20
10
Transition Frequency f
0
1 10 100 1000
Collector Current IC (mA)
Maximum Stable Gain, Maximum Available Gain
vs. Collector Current
30
VCE = 3 V
MAG
25
MSG
20
15
10
5
Maximum Stable Gain MSG (dB)
0
Maximum Available Gain MAG (dB)
1 10 100 1000
Collector Current I
Rev.4.00 Jun 21, 2006 page 3 of 12
f = 1 GHz
1.8 GHz
2.4 GHz
5.2 GHz
5.8 GHz
(mA)
C
S
Parameter, Maximum Available Gain,
21
Maximum Stable Gain vs. Frequency
40
(dB)
2
|
|S
Parameter
S
30
21
20
10
21
Maximum Stable Gain MSG (dB)
VCE = 3 V
I
= 30 mA
C
0
Maximum Available Gain MAG (dB)
0.1 1 10
MSG
|S21|
Frequency f (GHz)
2
MAG
HSG2004
2.4 GHz Characteristics
Evaluation Board Circuit
VBB:Bias Control
P
- P
Characteristics
in
out
25
20
VCC = 3.6 V
(dBm)
out
15
I
idle
f = 2.4 GHz
10
5
Power Gain PG (dB)
Output Power P
0
-5
-20
IN
P
- P
in
= 30 mA
Characteristics
out
-10
1000 pF*1 µF 10 pF
C : 1 to 2 pF
P
out
I
op
0
C : 1 pF
PG
R : 27 Ω
L : 5.6 nH
L : 1.5 nH
300
250
200
150
100
50
0
10
(mA)
op
I
10 pF
L : 10 nH
L : 1.8 nH
1000 pF
C : 2 pF
*1 µF
C : 0.9 pF
VCC
3rd. Order Intermodulation Distortion (IMD3)
40
VCE = 3.6 V
30
I
= 30 mA
idle
f = 2.4 GHz
20
10
Fundamental
0
(1tone)
-10
/ IMD3 (dBm)
-20
out
P
-30
-40
-50
IMD3
(2tone: ∆f = 1MHz)
-40 0 40-20-60
20
OUT
Input Power P
S parameter vs. Frequency
20
10
0
-10
-20
S parameter (dB)
-30
-40
S21
S11
S22
S12
2.0 3.5
1.5 3.0 4.02.51.0
Frequency f (GHz)
Rev.4.00 Jun 21, 2006 page 4 of 12
(dBm)
in
VCE = 3.6 V
I
= 30 mA
C
Input Power Pin (dBm)
S parameter vs. Frequency
20
10
0
-10
S22
-20
S parameter (dB)
-30
-40
1.0
S12
1.5 3.0 4.02.5
S21
I
C
S11
2.0 3.5
Frequency f (GHz)
VCE = 3.6 V
= 40 mA
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