RENESAS HIT667 User Manual
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HIT667
Silicon NPN Epitaxial
Features
• Low frequency power amplifier
• Complementary pair with HIT647
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
REJ03G1505-0200
Rev.2.00
Mar 05, 2007
1. Emitter
2. Collecto
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current IC 1.0 A
Collector peak current IC
Collector power dissipation PC 0.9 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20%
120 V
CBO
100 V
CEO
6 V
EBO
*1 2.0 A
(peak)
Rev.2.00 Mar 05, 2007 page 1 of 4
HIT667
Electrical Characteristics
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V
Collector to emitter breakdown voltage V
Emitter to base breakdown voltage V
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V
120 — — V IC = 100 µA, IE = 0
(BR)CBO
100 — — V IC = 10 mA, RBE = ∞
(BR)CEO
6 — — V IE = 100 µA, IC = 0
(BR)EBO
— — 500 nA VCB = 120 V, IE = 0
CBO
— — 500 nA VEB = 6 V, IC = 0
EBO
140 — 330 — VCE = 2 V, IC = 150 mA
FE1
40 — — — VCE = 5 V, IC = 1 A
FE2
— — 0.5 V IC = 500 mA, IB = 50 mA
CE(sat)
— — 1.1
BE(sat)
V
(Ta = 25°C)
IC = 500 mA, IB = 50 mA
Rev.2.00 Mar 05, 2007 page 2 of 4
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