RENESAS HIT1213 User Manual
r
HIT1213
Silicon NPN Epitaxial
Features
• Low frequency power amplifier
• Complementary pair with HIT673
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
REJ03G1609-0100
Rev.1.00
Nov 28, 2007
1. Emitter
2. Collecto
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current IC 0.5 A
Collector peak current I
Collector power dissipation PC 0.4 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: PW ≤ 10 ms, Duty cycle ≤ 20%
50 V
CBO
50 V
CEO
5 V
EBO
Note
C (peak)
1.0 A
REJ03G1609-0100 Rev.1.00 Nov 28, 2007
Page 1 of 4
HIT1213
Electrical Characteristics
Item Symbol Min. Typ Max. Unit Test Conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
V
V
V
50 — — V I
(BR)CBO
50 — — V IC = 0.1 mA, RBE = ∞
(BR)CEO
5 — — V I
(BR)EBO
I
— — 500 nA V
CBO
I
— — 500 nA VEB = 5 V
EBO
h
60 — 320 — VCE = 3 V, IC = 10 mA
FE1
V
— — 0.6 V IC = 150 mA, IB = 15 mA
CE(sat)
V
BE(on)
— — 1.2 V
= 10 µA, I
C
= 10 µA, I
E
= 50 V, IE = 0
CB
V
= 3 V, IC = 10 mA
CE
(Ta = 25°C)
= 0
E
= 0
C
REJ03G1609-0100 Rev.1.00 Nov 28, 2007
Page 2 of 4
Loading...