RENESAS HAT2137H User Manual

HAT2137H

Silicon N Channel Power MOS FET
Power Switching

Features

• Capable of 7 V gate drive

• Low drive current

• High density mounting

• Low on-resistance

= 3.8 mΩ typ. (at VGS = 10 V)

R

DS (on)

Outline

RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)

REJ03G1191-0400

(Previous: ADE-208-1 579 B )

Rev.4.00

Sep 07, 2005

5
D

5

4

3

2

1

4

G

SS

S

1

23

1, 2, 3 Source
4 Gate
5 Drain

Rev.4.00 Sep 07, 2005 page 1 of 7

HAT2137H

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Value Unit

Drain to source voltage V
Gate to source voltage V
Drain current ID 45 A
Drain peak current I

D (pulse)

Body-drain diode reverse drain current IDR 45 A
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Tc = 25 °C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

40 V

DSS

±20 V

GSS

Note 1

180 A

Note 3

30 A

Note 3

72 mJ

Note 2

30 W

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V

R

R
Forward transfer admittance |yfs| 38 64 — S ID = 22.5 A, VDS = 10 V
Input capacitance Ciss — 6200 — pF
Output capacitance Coss — 780 — pF
Reverse transfer capacitance Crss — 410 — pF
Total gate charge Qg — 95 — nC
Gate to source charge Qgs — 24 — nC
Gate to drain charge Qgd — 14 — nC
Turn-on delay time t
Rise time tr — 50 — ns
Turn-off delay time t
Fall time tf — 14 — ns
Body-drain diode forward voltage VDF — 0.84 1.10 V IF = 45 A, VGS = 0
Body-drain diode reverse recovery time trr — 40 — ns IF = 45 A, VGS = 0

Note: 4. Pulse test

40 — — V ID = 10 mA, VGS = 0

(BR) DSS

±20 — — V IG = ±100 µA, VDS = 0

(BR) GSS

— — ±10 µA VGS = ±16 V, VDS = 0

GSS

— — 1 µA VDS = 40 V, VGS = 0

DSS

2.0 — 3.5 V VDS = 10 V, ID = 1 mA

GS (off)

— 3.8 4.8 mΩ ID = 22.5 A, VGS = 10 V

DS (on)

— 4.4 6.0 mΩ ID = 22.5 A, VGS = 7 V

DS (on)

VDS = 10 V
VGS = 0
f = 1 MHz

VDD = 10 V

= 10 V

V

GS

I

= 45 A

D

— 27 — ns

d (on)

— 90 — ns

d (off)

= 10 V, ID = 22.5 A

V

GS

≅ 10 V

V

DD

R

= 0.44 Ω

L

Rg = 4.7 Ω

diF/dt = 100 A/µs

Note 4

Note 4

Note 4

Note 4

Static drain to source on state resistance

Rev.4.00 Sep 07, 2005 page 2 of 7

HAT2137H

Main Characteristics

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

0 50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

50

10 V

4 V

(A)

D

40

30

Pulse Test

3.8 V

3.6 V

Maximum Safe Operation Area

500

100

(A)

D

10

Operation in

1

this area is
limited by R

0.1

Drain Current I

Tc = 25°C
1 shot Pulse

0.01

0.1 0.3 1 3 10 30

PW = 10 ms

DC Operation

DS (on)

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics

50

VDS = 10 V
Pulse Test

40

(A)

D

30

1 ms

100 µs

10 µs

100

20

10

Drain Current I

0

02 468

VGS = 3.2 V

Drain to Source Voltage V

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

500

(mV)

400

DS (on)

300

200

100

0

Drain to Source Voltage V

04 8121620

Pulse Test

ID = 50 A

DS

3.4 V

(V)

20 A

10 A

10

20

10

Drain Current I

0

012345

Tc = 75°C

Gate to Source Voltage V

Static Drain to Source on State Resistance

vs. Drain Current

1000

Pulse Test

(mΩ)

300

100

DS (on)

30

10

3

Drain to Source on State Resistance

1

R

VGS = 7 V

10 V

0.3 3 300.1 1 10 100

25°C

–25°C

(V)

GS

Gate to Source Voltage VGS (V)

Rev.4.00 Sep 07, 2005 page 3 of 7

Drain Current ID (A)