HAT2137H
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
= 3.8 mΩ typ. (at VGS = 10 V)
R
DS (on)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
REJ03G1191-0400
(Previous: ADE-208-1 579 B )
Rev.4.00
Sep 07, 2005
5
D
5
4
3
2
1
4
G
SS
S
1
23
1, 2, 3 Source
4 Gate
5 Drain
Rev.4.00 Sep 07, 2005 page 1 of 7
HAT2137H
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage V
Gate to source voltage V
Drain current ID 45 A
Drain peak current I
D (pulse)
Body-drain diode reverse drain current IDR 45 A
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
40 V
DSS
±20 V
GSS
Note 1
180 A
Note 3
30 A
Note 3
72 mJ
Note 2
30 W
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
R
R
Forward transfer admittance |yfs| 38 64 — S ID = 22.5 A, VDS = 10 V
Input capacitance Ciss — 6200 — pF
Output capacitance Coss — 780 — pF
Reverse transfer capacitance Crss — 410 — pF
Total gate charge Qg — 95 — nC
Gate to source charge Qgs — 24 — nC
Gate to drain charge Qgd — 14 — nC
Turn-on delay time t
Rise time tr — 50 — ns
Turn-off delay time t
Fall time tf — 14 — ns
Body-drain diode forward voltage VDF — 0.84 1.10 V IF = 45 A, VGS = 0
Body-drain diode reverse recovery time trr — 40 — ns IF = 45 A, VGS = 0
Note: 4. Pulse test
40 — — V ID = 10 mA, VGS = 0
(BR) DSS
±20 — — V IG = ±100 µA, VDS = 0
(BR) GSS
— — ±10 µA VGS = ±16 V, VDS = 0
GSS
— — 1 µA VDS = 40 V, VGS = 0
DSS
2.0 — 3.5 V VDS = 10 V, ID = 1 mA
GS (off)
— 3.8 4.8 mΩ ID = 22.5 A, VGS = 10 V
DS (on)
— 4.4 6.0 mΩ ID = 22.5 A, VGS = 7 V
DS (on)
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
= 10 V
V
GS
I
= 45 A
D
— 27 — ns
d (on)
— 90 — ns
d (off)
= 10 V, ID = 22.5 A
V
GS
≅ 10 V
V
DD
R
= 0.44 Ω
L
Rg = 4.7 Ω
diF/dt = 100 A/µs
Note 4
Note 4
Note 4
Note 4
Static drain to source on state resistance
Rev.4.00 Sep 07, 2005 page 2 of 7
HAT2137H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
4 V
(A)
D
40
30
Pulse Test
3.8 V
3.6 V
Maximum Safe Operation Area
500
100
(A)
D
10
Operation in
1
this area is
limited by R
0.1
Drain Current I
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30
PW = 10 ms
DC Operation
DS (on)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
(A)
D
30
1 ms
100 µs
10 µs
100
20
10
Drain Current I
0
02 468
VGS = 3.2 V
Drain to Source Voltage V
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
(mV)
400
DS (on)
300
200
100
0
Drain to Source Voltage V
04 8121620
Pulse Test
ID = 50 A
DS
3.4 V
(V)
20 A
10 A
10
20
10
Drain Current I
0
012345
Tc = 75°C
Gate to Source Voltage V
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
(mΩ)
300
100
DS (on)
30
10
3
Drain to Source on State Resistance
1
R
VGS = 7 V
10 V
0.3 3 300.1 1 10 100
25°C
–25°C
(V)
GS
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 7
Drain Current ID (A)
HAT2137H
Static Drain to Source on State Resistance
vs. Temperature
10
(mΩ)
DS (on)
Static Drain to Source on State Resistance
R
Pulse Test
8
6
VGS = 7 V
4
2
0
–25 0 50 1007525 125 150
ID = 20 A, 10 A
10 A, 20 A, 50 A
10 V
50 A
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
(ns)
rr
50
Forward Transfer Admittance vs.
Drain Current
1000
| (S)
fs
300
100
30
10
3
1
0.3
0.1
Forward Transfer Admittance |y
0.3
Tc = –25°C
25°C
VDS = 10 V
Pulse Test
3300.1 1 10 100
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
75°C
Ciss
Coss
20
di / dt = 50 A / µs
= 0, Ta = 25°C
V
Reverse Recovery Time t
10
0.1 0.3 1 3 10 30 100
GS
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
ID = 50 A
(V)
DS
40
30
20
10
Drain to Source Voltage V
0
0 40 80 120 160 200
V
VDD = 25 V
10 V
5 V
DS
VDD = 25 V
10 V
5 V
300
100
Crss
Capacitance C (pF)
30
10
010203040
VGS = 0
f = 1 MHz
Drain to Source Voltage VDS (V)
Switching Characteristics
20
(V)
GS
16
V
GS
12
8
4
Gate to Source Voltage V
0
1000
500
200
t
d(off)
100
t
f
50
t
Switching Time t (ns)
d(on)
20
t
r
10
0.1 0.2 2 10 1002010.5 5
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
50
Gate Charge Qg (nc)
Rev.4.00 Sep 07, 2005 page 4 of 7
Drain Current I
(A)
D
HAT2137H
Reverse Drain Current vs.
Source to Drain Voltage
50
(A)
40
DR
30
20
10
10 V
5 V
VGS = 0
Reverse Drain Current I
0
0 0.4 0.8 1.2 1.6
Source to Drain Voltage VSD (V)
3
1
D = 1
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
(mJ)
AR
80
60
40
20
Pulse Test
2.0
0
25 50 75 100 125 150
Repetitive Avalanche Energy E
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
IAP = 30 A
V
duty < 0.1 %
Rg ≥ 50 Ω
Tc = 25°C
= 15 V
DD
Vin
15 V
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.01
0.01
Normalized Transient Thermal Impedance γ s (t)
10 µ 100 µ 1 m
1shot pulse
10 m 100 m 1 10
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
P
DM
PW
T
D =
PW
T
Pulse Width PW (S)
Avalanche Test Circuit Avalanche Waveform
V
DS
Monitor
Rg
50 Ω
I
AP
Monitor
D.U.T
L
V
DD
EAR = • L • I
1
2
I
AP
2
•
AP
V
DSS
I
D
V
DSS
– V
DD
V
(BR)DSS
V
DS
Rev.4.00 Sep 07, 2005 page 5 of 7
V
DD
0
HAT2137H
Switching Time Test Circuit Switching Time Waveform
90%
90%
10%
t
f
Vin Monitor
Rg
Vin
10 V
D.U.T.
R
L
V
= 10 V
Vout
Monitor
DS
Vin
Vout
t
d(on)
10%
10%
90%
t
r
t
d(off)
Rev.4.00 Sep 07, 2005 page 6 of 7
HAT2137H
Package Dimensions
RENESAS CodeJEITA Package Code
PTZZ0005DA-A LFPAK
Package Name
4.9
5.3 Max
4.0 ± 0.2
3.95
14
+0.03
–0.04
1.27
1.1 Max
0.07
0.40 ± 0.06
5
0.75 Max
0.10
MASS[Typ.]
0.080gSC-100
+0.1
–0.3
6.1
0.20
0.25
+0.05
–0.03
0° – 8°
M
0.25
1.0
+0.25
+0.05
–0.03
–0.20
0.6
Unit: mm
3.3
4.2
1.3 Max
(Ni/Pd/Au plating)
Ordering Information
Part Name Quantity Shipping Container
HAT2137H-EL-E 2500 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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