RENESAS HAT2134H Technical data
HAT2134H
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
= 2.3 mΩ typ. (at VGS = 10 V)
R
DS (on)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
REJ03G1190-0300
(Previous: ADE-208-1 578 A )
Rev.3.00
Sep 07, 2005
5
D
5
4
3
2
1
4
G
SS
S
1
23
1, 2, 3 Source
4 Gate
5 Drain
Rev.3.00 Sep 07, 2005 page 1 of 3
HAT2134H
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage V
Gate to source voltage V
Drain current ID 60 A
Drain peak current I
D (pulse)
Body-drain diode reverse drain current IDR 60 A
Avalanche current IAP
Avalanche energy EAR
Channel dissipation Pch
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
20 V
DSS
±20 V
GSS
Note 1
240 A
Note 3
20 A
Note 3
40 mJ
Note 2
30 W
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
R
R
Forward transfer admittance |yfs| 51 85 — S ID = 30 A, VDS = 10 V
Input capacitance Ciss — 4500 — pF
Output capacitance Coss — 1200 — pF
Reverse transfer capacitance Crss — 560 — pF
Total gate charge Qg — 70 — nC
Gate to source charge Qgs — 15 — nC
Gate to drain charge Qgd — 11 — nC
Turn-on delay time t
Rise time tr — 60 — ns
Turn-off delay time t
Fall time tf — 17 — ns
Body-drain diode forward voltage VDF — 0.85 1.10 V IF = 60 A, VGS = 0
Body-drain diode reverse recovery time trr — 50 — ns IF = 60 A, VGS = 0
Note: 4. Pulse test
20 — — V ID = 10 mA, VGS = 0
(BR) DSS
±20 — — V IG = ±100 µA, VDS = 0
(BR) GSS
— — ±10 µA VGS = ±16 V, VDS = 0
GSS
— — 1 µA VDS = 20 V, VGS = 0
DSS
1.0 — 2.5 V VDS = 10 V, ID = 1 mA
GS (off)
— 2.3 2.9 mΩ ID = 30 A, VGS = 10 V
DS (on)
— 4.0 5.8 mΩ ID = 30 A, VGS = 4.5 V
DS (on)
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
= 10 V
V
GS
I
= 60 A
D
— 20 — ns
d (on)
— 85 — ns
d (off)
= 10 V, ID = 30 A
V
GS
≅ 10 V
V
DD
R
= 0.33 Ω
L
Rg = 4.7 Ω
diF/dt = 50 A/µs
Note 4
Note 4
Note 4
Note 4
Static drain to source on state resistance
Rev.3.00 Sep 07, 2005 page 2 of 3
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