HA31005ANP
SiGe MMIC
High Frequency Power Amplifier
Features
• Ideal for IEEE802.11a / b / g / n applications. e.g. Wireless LAN FEM
• High Gain (24 dB @ 5.2 GHz, 30dB @ 2.4 GHz)
• Small footprint package.
(HWQFN-16 : 3.0 x 3.0 x 0.8 mm)
• RoHS Compliant
Outline
RENESAS Package code: PWQN0016KA-B
(Package name: HWQFN-16)
REJ03F0173-0200
Rev.2.00
Jul 31, 2007
10. GND
11. RFin
12. GND
13. VC1
14. GND
15. VC2
16. GND
17. GND
13
14
10
11
12
31005
15
16
9
8
7
6
5
2
1
17
4
3
5
6
7
8
1. GND
2. RFout
3. RFout
4. GND
5. GND
16
15
4
3
2
1
14
13
9
10
11
12
6. VB3
7. VB2
8. VB1
9. VCC
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Supply Voltage VCC 4 V
Maximum Current ICC 400 mA
Maximum Input Power P
Total Power Dissipation Pt 1.4
Operating Case Temperature Tc(op) -10 to +85 °C
Storage Temperature Tstg –55 to +150 °C
Notes: Value on PCB (FR-4 : 20 x 20 x 0.4 mm double side)
+10 dBm
in max
note
W
REJ03F0173-0200 Rev.2.00 Jul 31, 2007
Page 1 of 7
HA31005ANP
Electrical Characteristics
Item Symbol Min. Typ Max. Unit Test Conditions
Supply Voltage VCC 3 3.3 3.6 V
Power Gain PG1 — 24 — dB
Circuit Current Icc1 — 160 — mA
Output Power Pout1 — +18 — dBm
Power Gain PG2 — 30 — dB
Circuit Current Icc2 — 110 — mA
Output Power Pout2 — +18 — dBm
Power Gain PG3 — 30 — dB
Circuit Current Icc3 — 170 — mA
Output Power Pout3 — +22 — dBm
f = 5.15 to 5.35 GHz
Pout = +18 dBm, Icq = 130 mA
f = 5.15 GHz , EVM = 4%,
54 Mbps, 64 QAM_OFDM, Icq = 130 mA
f = 2.484 GHz
Pout = +18 dBm, Icq = 90 mA
f = 2.484 GHz, EVM = 4%,
54 Mbps, 64 QAM_OFDM, Icq = 90 mA
f = 2.484 GHz, .11 b 11 Mbps
Vcc = 3.3 V, Icq = 90 mA
Function Block Diagram
(Ta = 25°C)
Vcc
GND
RFin
GND
VB1
bias bias bias
Vc1
VB2
GND
VB3
Vc2
GND
GND
GND
RFout
RFout
GND
REJ03F0173-0200 Rev.2.00 Jul 31, 2007
Page 2 of 7
HA31005ANP
Evaluation Circuit for IEEE 802.11a
Vbb = 3.0 V
*
1.5 kΩ
1.5
kΩ
1.5 kΩ
** *
RFin
0.2 pF
0.5 pF
2 pF
1 pF
8
9
12
31005
13
**
5
4
1 pF
1
16
*
0.5 pF
*
*
Vcc = 3.3 V
RFout
* 1000 pF
REJ03F0173-0200 Rev.2.00 Jul 31, 2007
Page 3 of 7