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companies. Therefore, although the old company name remains in this document, it is a valid
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April 1
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
st
, 2010
Send any inquiries to http://www.renesas.com/inquiry.
Notice
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DATA SHEET
NPN SILICON RF TRANSISTOR
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
FEATURES
• Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
tot
• Large P
• Small package : 3-pin power minimold package
ORDERING INFORMATION
tot
: P
= 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)
2SC3357
Part Number Quantity Supplying Form
2SC3357 25 pcs (Non reel) • 12 mm wide embossed taping
2SC3357-T1 1 kpcs/reel • Collector face the perforat i on side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T
2
Mounted on 16 cm
Note
× 0.7 mm (t) ceramic substrate
CBO
CEO
EBO
C
Note
tot
P
j
stg
20 V
12 V
3.0 V
100 mA
1.2 W
150
−
65 to +150
°
C
°
C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark
••••
shows major revised points.
NEC Compound Semiconductor Devices 1985, 2003
2SC3357
THERMAL RESISTANCE
Parameter Symbol Value Unit
Note
th (j-a)
Junction to Ambient Resistance
Mounted on 16 cm
Note
2
× 0.7 mm (t) ceramic substrate
R
62.5
ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Gain Bandwidth Product f
Insertion Power Gain
Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB
Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB
Reverse Transfer Capacitance
CBO
VCB = 10 V, IE = 0 mA – – 1.0
EBO
VEB = 1.0 V, IC = 0 mA – – 1.0
Note 1
FE
h
C
VCE = 10 V, IC = 20 mA 50 120 250 –
T
VCE = 10 V, IC = 20 mA – 6.5 – GHz
2
21e
S
VCE = 10 V, IC = 20 mA, f = 1 GHz – 9.0 – dB
Note 2
re
VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.65 1.0 pF
°
C/W
µ
A
µ
A
Notes 1.
Pulse measurement: PW ≤ 350
The emitter terminal and the case shall be connected to the guard terminal of the three-terminal
2.
s, Duty Cycle ≤ 2%
µ
capacitance bridge.
hFE CLASSIFICATION
Rank RH RF RE
Marking RH RF RE
hFE Value 50 to 100 80 to 160 125 to 250
2
Data Sheet PU10211EJ01V0DS
TYPICAL CHARACTERISTICS (TA = +25°°°°C, unless otherwise specified)
2SC3357
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2
(W)
tot
Ceramic substrate
2
16 cm
× 0.7 mm (t)
1
Free air R
th (j-a)
312.5˚C/W
Total Power Dissipation P
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
FE
50
V
CE
= 10 V
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
(pF)
re
1
0.5
Reverse Transfer Capacitance C
0.3
0.50.2 1 2 5 10 3020
Collector to Base Voltage VCB (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 10 V
5
(GHz)
T
3
2
1
f = 1 MHz
DC Current Gain h
20
10
15100.5 50
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
25
MAG
20
(dB)
2
|
15
21e
10
5
V
CE
= 10 V
C
= 20 mA
I
0
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
0.05 0.1 0.5 10.2 2
Frequency f (GHz)
2
|S
21e
|
0.5
0.3
0.2
Gain Bandwidth Product f
0.1
1 5 10 500.1 0.5 100
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
(dB)
2
|
21e
10
5
Insertion Power Gain |S
0
0.5 1 10 50570
Collector Current IC (mA)
VCE = 10 V
f = 1 GHz
Data Sheet PU10211EJ01V0DS
3
2SC3357
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
5
4
VCE = 10 V
f = 1 GHz
(dBc)
2
IM2, IM3 vs. COLLECTOR CURRENT
100
(dBc)
3
90
80
70
VCE = 10 V
Vo= 100 dB V/50 Ω
Rg = Re = 50 Ω
IM2 : f = 90 + 100 MHz
IM3 : f = 2 × 200 – 190 MHz
µ
IM
3
3
2
Noise Figure NF (dB)
1
0
0.5 1 5 10 50 70
Remark
Collector Current I
The graphs indicate nominal characteristics.
C
(mA)
60
50
40
30
2nd Order Intermodulation Distortion IM
3rd Order Intermodulation Distortion IM
20 30 40 50 60 70
Collector Current I
C
(mA)
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
IM
2
4
Data Sheet PU10211EJ01V0DS
SMITH CHART
S
11e
, S
22e
-FREQUENCY
CONDITION : V
CE
= 10 V
2SC3357
0.13
0.12
0.11
0.39
100
0.9
0.8
0.7
S
11e
0.5
0.6
0.7
0.8
REACTANCE COMPONENT
––––
(
Z
0.7
0.8
110
0.9
−
100
−
0.10
0.11
0.40
0.39
0.38
R
O
0.10
0.40
0.09
0.41
0.42
0.5
N
E
N
O
Z
IVE
T
A
G
0.5
−
0.42
120
0.6
T
0.3
NE
0.6
120
−
0.08
110
0.4
f = 0.2 GHz
0.09
0.41
0.08
0.07
0.43
130
0.06
0.44
0.05
140
P
0.4
M
0.45
R
O
T
A
R
0.04
E
0.46
N
E
G
D
R
0.03
A
S
0.47
E
W
E
O
T
R
G
S
E
H
D
T
0.02
G
0.48
N
I
N
T
E
L
N
E
E
I
V
C
A
F
0.01
W
0.49
F
E
O
C
0
N
0
0
O
I
T
C
E
L
F
D
E
A
R
O
0.01
0.1
L
0.49
F
O
D
R
E
A
L
G
W
N
O
0.02
A
T
0.48
S
H
T
160
G
−
N
E
0.03
L
0.47
E
V
A
0.46
0.1
0.04
CO
E
C
N
A
T
)
C
0.3
150
A
O
E
+JX
R
––––
(
E
V
Z
I
T
I
OS
P
0.2
0.1
0.2
T
0.2
N
E
N
O
P
)
OM
O
C
E
W
0.3
C
(
150
−JX
––––
N
−
A
T
C
A
E
R
0.4
0.05
140
−
0.45
0.06
130
0.44
0.07
0.43
90
1.0
0.9
1.0
)
1.0
0.12
0.38
0.37
0.2
0.4
0.6
0.6
0.4
0.2
1.2
0.2
0.4
0.6
0.8
0.6
0.4
0.2
−
90
0.13
0.37
0.14
0.15
0.36
0.35
80
70
1.2
1.4
1.6
0.8
1.0
1.0
0.8
f = 20 GHz
1.4
1.6
1.8
2.0
f = 0.2 GHz
S
22e
1.0
1.0
f = 2.0 GHz
0.8
1.4
−
70
1.2
−
80
0.15
0.14
0.35
0.36
0.16
0.34
0.17
0.33
0.18
60
0.32
1.8
3.0
1.8
−
60
1.6
0.16
0.34
0.19
50
0.31
2.0
4.0
5.0
2.0
0.17
0.33
0.20
40
0.30
0.21
3.0
0.29
30
0.22
4.0
0.28
20
6.0
0.23
0.27
10
10
0.24
0.26
20
50
0.25
10
4.0
3.0
−40
0.19
0.31
−50
0.18
0.32
0.25
20
0.20
0
50
20
−10
10
−20
0.22
5.0
−30
0.21
0.29
0.30
0.24
0.23
0.28
0.26
0.27
: IC = 20 mA
: I
C
= 40 mA
S
21e
-FREQUENCY
CONDITION : V
150˚
180˚
–150˚
–120˚
CE
= 10 V, IC = 20 mA
120˚
f = 0.2 GHz
f = 2.0 GHz
90˚
S
21e
3 6 9 12 15
–90˚
60˚
–60˚
S
CONDITION : V
30˚
0˚
180˚
–30˚
12e
-FREQUENCY
150˚
–150˚
–120˚
CE
= 10 V, IC = 20 mA
120˚
f = 0.2 GHz
90˚
f = 2.0 GHz
S
12e
0.1 0.2 0.3 0.4 0.5
–90˚
60˚
30˚
0˚
–30˚
–60˚
Data Sheet PU10211EJ01V0DS
5
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (UNIT: mm)
2SC3357
4.5±0.1
0.8 MIN.
1.6±0.2
C
EB
0.47±0.06
1.5
3.0
2.5±0.1
0.42±0.060.42±0.06
PIN CONNECTIONS
E : Emitter
C: Collector (Fin)
B : Base
(IEC : SOT-89)
4.0±0.25
1.5±0.1
0.41
+0.03
–0.06
6
Data Sheet PU10211EJ01V0DS
2SC3357
•
The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10211EJ01V0DS
7
2SC3357
Business issue
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NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
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TEL: +1-408-988-3500 FAX: +1-408-988-0279
Technical issue
NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
TEL: +852-3107-7303
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