Renesas 2SC3357 Schematic [ru]

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1
Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

st

, 2010

Send any inquiries to http://www.renesas.com/inquiry.

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DATA SHEET

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN POWER MINIMOLD

FEATURES

• Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz

• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz

tot

• Large P

• Small package : 3-pin power minimold package

ORDERING INFORMATION

tot

: P

= 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)

2SC3357

Part Number Quantity Supplying Form
2SC3357 25 pcs (Non reel) • 12 mm wide embossed taping
2SC3357-T1 1 kpcs/reel • Collector face the perforat i on side of the tape

Remark

To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T

2

Mounted on 16 cm

Note

× 0.7 mm (t) ceramic substrate

CBO

CEO

EBO

C

Note

tot

P

j

stg

20 V
12 V

3.0 V

100 mA

1.2 W

150

−

65 to +150

°

C

°

C

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
Date Published January 2003 CP(K)
Printed in Japan

The mark

••••

shows major revised points.

NEC Compound Semiconductor Devices 1985, 2003



2SC3357

THERMAL RESISTANCE

Parameter Symbol Value Unit

Note

th (j-a)

Junction to Ambient Resistance

Mounted on 16 cm

Note

2

× 0.7 mm (t) ceramic substrate

R

62.5

ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Gain Bandwidth Product f
Insertion Power Gain
Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB
Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB
Reverse Transfer Capacitance

CBO

VCB = 10 V, IE = 0 mA – – 1.0

EBO

VEB = 1.0 V, IC = 0 mA – – 1.0

Note 1

FE

h



C

VCE = 10 V, IC = 20 mA 50 120 250 –

T

VCE = 10 V, IC = 20 mA – 6.5 – GHz

2



21e

S

VCE = 10 V, IC = 20 mA, f = 1 GHz – 9.0 – dB

Note 2

re

VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.65 1.0 pF

°

C/W

µ

A

µ

A

Notes 1.

Pulse measurement: PW ≤ 350
The emitter terminal and the case shall be connected to the guard terminal of the three-terminal

2.

s, Duty Cycle ≤ 2%

µ

capacitance bridge.

hFE CLASSIFICATION

Rank RH RF RE

Marking RH RF RE

hFE Value 50 to 100 80 to 160 125 to 250

2

Data Sheet PU10211EJ01V0DS