RECTRON SD4150 Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

SURFACE MOUNT 1N4150 DIODE

Absolute Maximum Ratings (Ta=25°C)

ITEMS SYMBOL RATINGS UNIT
Reverse

Voltage
Reverse
Recovery Time
ForwardVoltage
@ If = 50 mA
ForwardCurrent IF 300 mA
Junction Temp. Tj -55 to 150
Storage Temp. Tstg -55 to 150

VR 50 V

trr 6 ns
VF 0.86 V

°
°

C
C

SD4150

(1)

(2)

32-TOS32-TOS

32-TOS32-TOS

32-TOS

(3)

Mechanical Data

ITEMS MATERIALS
Package SOT-23
Lead Frame 42 Alloy
Lead Finish Solder Plating
Bond Wire Au
Mold Resin Epoxy
Chip Silicon

Electrical Characteristics (Ta=25°C)

RATINGS SYMBOL RATINGS UNIT
Reverse Voltage IR= 100uA VR 50 V
Repetitive Peak Reverse Voltage VRRM 75 V
Repetitive Peak Forward Current IFRM 600 mA
Forward Voltage

IF= 1mA
IF= 10mA
IF= 50mA
IF= 100mA
IF= 200mA
Reverse Current
VR= 50V
VR= 50V (Tj= 150°C)

VF

0.62

0.74

0.86

0.92

1.00

IR

0.10
100

1. ANODE

2. NC

3. CATHODE

(UNITS: mm)

uA

V

Junction Capacitance VR = 0 V, f = 1MHz Cj 2.5 pF

RECTRON USA

1315 John Reed Court, Industry, CA 91745

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www.rectron.com