RECTRON RS804, RS802, RS803, RS801, RS805 Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICA TION

SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes

FEATURES

* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 250 amperes peak
* Ideal for printed circuit boards
* High forward surge current capability

MECHANICAL DATA

* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

.700 (17.8
.600 (16.8

1.00

(

25.4

.140
(

)

3.5

RS801

THRU

RS807

RS-8

.15 x .23L

(

)

3.8 x 5.7L

)

.935 (23.7
.895 (22.7

)
)

MIN.

)

AC

HOLE THRU

)

.300
(

)

7.5
)

.780 (19.8

)

.740 (18.8

)

.052 (1.3

DIA.

)

.048 (1.2

)

.220 (5.6

)

.180 (4.6

)

.280 (7.1

)

.268 (6.8

MAXIMUM RATINGS

(At TA = 25oC unless otherwise noted)

RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 75oC

with heat sink
Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load
Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS

(At TA = 25oC unless otherwise noted)

CHARACTERISTICS

Maximum Forward Voltage Drop per element at 8.0A DC

Maximum Reverse Current at Rated
DC Blocking Voltage per element

@TA = 25oC
@TC = 100oC

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

TJ,T

STG

SYMBOL

V

F

I

R

Dimensions in inches and (millimeters)

RS801 RS803 RS804RS802 RS805 RS806 RS807

50 200 400100 600 800 1000
35 140 28070 420 560 700
50 200 400100 600 800 1000 Volts

250

-55 to + 150

RS801 RS803 RS804RS802 RS805 RS806 RS807

1.1
10

0.2 mAmps

UNITS

Volts
Volts

Amps8.0

Amps

0

C

UNITS

Volts

uAmps

2001-5

RATING AND CHARACTERISTIC CURVES (RS801 THRU RS807)

TYPICAL INSTANTANEOUS FORWARD

30
20

10

5

TC = 150 (TYP)

2
1

0.5

0.2

INSTANTANEOUS FORWARD CURRENT, (A)

0.1

0.4 0.6 0.8 1 1.2

INSTANTANEOUS FORWARD VOLTAGE, (V)

CHARACTERISTICS

TC = 25 (TYP)

pulse test
per one diode

POWER DISSIPATION

28

sine wave
Tj=150

24

20

16

12

8

POWER DISSIPATION PF(W)

4

0

0 2 4 6 8 12 14

AVERAGE RECTIFIED FORWARD CURRENT, Io (A)

10

SURGE FORWARD CURRENT CAPABILITY

260

200

100

PEAK FORWARD SURGE CURRENT, (A)

0

1 2 5 10 20 50 100

NUMBER OF CYCLE

FSM

I

0

sine wave

8.3ms 8.3ms

1 cycle

non-repetitive

Tj=25

TYPICAL FORWARD CURRENT

DERATING CURVE

9
8
7
6
5
4
3
2

AVERAGE FORWARD CURRENT, (A)

1

0

0 25 50 75 100 125 150 175

CASE TEMPERATURE, ( )

RECTRON

heatsink

Tc

sine wave
R-load

on heatsink

Tc