RECTRON RS803M, RS804M, RS802M, RS801M, RS805M Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICA TION

SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes

FEATURES

* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 200 amperes peak
* Ideal for printed circuit boards
* High forward surge current capability

RS801M

THRU

RS807M

RS-8M

MECHANICAL DATA

* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

MAXIMUM RATINGS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 75oC

Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load

Operating and Storage Temperature Range

(At TA = 25oC unless otherwise noted)

RATINGS

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

TJ,T

STG

.189 (4.8
.173 (4.4

)

.303 (7.7
.287 (7.3

)

4.2

(

.165

)
)

)
5

(

.197

)

3.8

(

.150

.150 (3.8
.134 (3.4

)

)

17.7

20.3

(

(

.697

.800

)

)

17.0

18.0

(

(

.669

.708

)

11.2

(

.441

)

)

10.8

(

.425

.114 (2.9
.098 (2.5

)

.031 (0.8

)

.023 (0.6

.106 (2.7
.096 (2.3

.094 (2.4
.078 (2.0

.043 (1.1
.035 (0.9

)
)

)
)

)
)

.402 (10.2
.386 (9.8

1.193 (30.3

1.169 (29.7

)

.303 (7.7

)

.287 (7.3

)
)

)
)

Dimensions in inches and (millimeters)

RS801M RS803M RS804MRS802M RS805M RS806M RS807M

50 200 400100 600 800 1000
35 140 28070 420 560 700

50 200 400100 600 800 1000 Volts

200

-55 to + 150

)
)

)

3.1

(

f.134

)
)

)

3.1

(

.122

UNITS

Volts
Volts

Amps8.0

Amps

0

C

ELECTRICAL CHARACTERISTICS

(At TA = 25oC unless otherwise noted)

CHARACTERISTICS

Maximum Forward Voltage Drop per element at 8.0A DC

Maximum Reverse Current at Rated
DC Blocking Voltage per element

@TA = 25oC
@TC = 100oC

SYMBOL

V

F

I

R

RS801M RS803M RS804MRS802M RS805M RS806M RS807M

1.1
10

0.2 mAmps

UNITS

Volts

uAmps

2001-5

RATING AND CHARACTERISTIC CURVES (RS801M THRU RS807M)

TYPICAL INSTANTANEOUS FORWARD

20

CHARACTERISTICS

10

5

TC = 150 (TYP)

2

TC = 25 (TYP)

1

0.5

0.2

INSTANTANEOUS FORWARD CURRENT, (A)

0.1

0.4 0.6 0.8 1 1.2

INSTANTANEOUS FORWARD VOLTAGE, (V)

pulse test
per one diode

SURGE FORWARD CURRENT CAPABILITY

260

200

FSM

I

0

sine wave

8.3ms 8.3ms

1 cycle

non-repetitive

Tj=25

100

28

POWER DISSIPATION

sine wave
Tj=150

24

20

16

12

8

POWER DISSIPATION PF(W)

4

0

0 2 4 6 8 12 14

AVERAGE RECTIFIED FORWARD CURRENT, Io (A)

TYPICAL FORWARD CURRENT

3

2

1

DERATING CURVE

10

on glass-epoxi substrate

soldering land 5mmf

P.C.B

sine wave
R-load
free in air

PEAK FORWARD SURGE CURRENT, (A)

0

1 2 5 10 20 50 100

NUMBER OF CYCLE

AVERAGE FORWARD CURRENT, (A)

AVERAGE FORWARD CURRENT, (A)

0

TYPICAL FORWARD CURRENT

DERATING CURVE

9
8

heatsink

Tc

7
6
5
4

sine wave
R-load
on heatsink

3
2
1

0

0 25 50 75 100 125 150 175

CASE TEMPERATURE, ( )

0 40 80 120 160

AMBIENT TEMPERATURE, ( )

Tc

RECTRON