RECTRON R2500F, R3000F, R4000F, R5000F Datasheet

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
HIGH VOL TAGE F AST RECOVERY RECTIFIER
VOLTAGE RANGE 2500 to 5000 Volts CURRENT 0.2 Ampere
FEA TURES
*Fast switching *Low leakage *High reliability *High current capability *High surge capability
MECHANICAL DAT A
* Case: Molded plastic * Epoxy: Device has UL flammability classification 94V-O * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
.300 (7.6 .230 (5.8
1.0 (25.4 MIN.
) )
1.0 (25.4 MIN.
R2500F
THRU
R5000F
.034 (0.9 .028 (0.7
)
.140 (3.6
.104 (2.6
)
DO-15
)
DIA.
)
)
DIA.
)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Rectified Current
at TA = 50oC Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method) Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 0.2A DC Maximum DC Reverse Current
at Rated DC Blocking Voltage TA = 25oC Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at TL = 55oC Maximum Reverse Recovery Time (Note) trr 500 nSec
NOTES :
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
TJ, T
STG
SYMBOL
V
F
I
R
2500 3000 4000 1750 2100 2800 2500 3000 4000
R2500F R3000F R4000F
4.0
R3000F R5000F
5.0
R4000F
200
30
-65 to + 175
5.0 uAmps
100
5000 3500 5000
R5000F
UNITSR2500F
Volts Volts Volts
mAmps
Amps
0
C
UNITS
Volts6.5
uAmps
2001-6
RATING AND CHARACTERISTIC CURVES
(
R2500F THRU R5000F
)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
250
Single Phase Half Wave 60Hz Inductive or
200
Resistive Load
150
100
50
AVERAGE FORWARD CURRENT, (mA)
0
0 50 100 150 175
AMBIENT TEMPERATURE, ( )
FIG. 3 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE10NONINDUCTIVE
( + )
25 Vdc (approx)
( - )
NOTES:
D.U.T
1 NON­INDUCTIVE
1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance = 50 ohms.
OSCILLOSCOPE
(NOTE 1)
( - )
PULSE
GENERATOR
(NOTE 2)
( + )
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
60
50
8.3ms Single Half Sine-Wave (JEDEC Method)
40
30
20
10
PEAK FORWARD SURGE CURRENT, (A)
0
1 2 4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
+0.5A
0
-0.25A
-1.0A
trr
1cm
SET TIME BASE FOR 50/100 ns/cm
RECTRON
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