RECTRON R1200F, R1500F, R2000F, R1800F Datasheet
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
HIGH VOL TAGE F AST RECOVERY RECTIFIER
VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere
FEA TURES
*Fast switching
*Low leakage
*High current capability
*High surge capability
*High reliability
MECHANICAL DAT A
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.35 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
.205 (5.2)
.166 (4.2)
MIN.
1.0 (25.4)
MIN.
R1200F
THRU
R2000F
.034 (0.9)
DIA.
.028 (0.7)
.107 (2.7)
.080 (2.0)
DIA.
DO-41
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA = 50oC
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 0.5A/0.2A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage TA = 25oC
Maximum Full Load Reverse Current Average, Full Cycle
.375”, (9.5mm) lead length at TL = 55oC
Maximum Reverse Recovery Time (Note)
NOTES :
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
Dimensions in inches and (millimeters)
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
TJ, T
SYMBOL
V
F
I
R
trr 500 nSec
STG
R1200F
1200
840 12601050 1400
1200
500
R1200F R1800F R2000FR1500F
2.5
R1800F R2000FR1500F
18001500 2000
18001500 2000
30
-65 to + 175
5.0 uAmps
100
200
UNITS
Volts
Volts
Volts
mAmps
Amps
0
C
UNITS
Volts4.0
uAmps
2001-6
RATING AND CHARACTERISTIC CURVES
(
R1200F THRU R2000F
)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
500
Single Phase Half Wave
60Hz Inductive or
400
300
200
Resistive Load
R1200F~R1800F
R2000F
100
AVERAGE FORWARD CURRENT, (mA)
0
0 50 100 150 175
AMBIENT TEMPERATURE, ( )
FIG. 3 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE10NONINDUCTIVE
( + )
25 Vdc
(approx)
( - )
NOTES:
D.U.T
1
NONINDUCTIVE
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
OSCILLOSCOPE
(NOTE 1)
( - )
PULSE
GENERATOR
(NOTE 2)
( + )
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
70
60
50
8.3ms Single Half Sine-Wave
(JEDEC Method)
40
30
20
10
PEAK FORWARD SURGE CURRENT, (A)
0
1 10 100
NUMBER OF CYCLES AT 60Hz
+0.5A
0
-0.25A
-1.0A
trr
1cm
SET TIME BASE FOR
50/100 ns/cm
RECTRON
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