RECTRON MM4150 Datasheet

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

1N4150 mini-MELF SIGNAL DIODE

Absolute Maximum Ratings (Ta=25°C)

Items S
Reverse Voltage VR 50 V
Reverse Recovery

Time
Power Dissipation P

Forward Current IF 200 mA
Junction Temp. Tj -65 to 200°C
Storage Temp. Tstg -65 to 200°C

Mechanical Data

Items Materials
Package
Case Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip Glass Passivated

M

ini MEL F

mbol Ratings Unit

trr 4 ns

tot

500 mW

0.4

0.2

2 Places

MM 4150

3.40

3.20

Dimensions in millimeters

1.40

1.30

FLEM-inimFLEM-inim

FLEM-inimFLEM-inim

FLEM-inim

Electrical Characteristics (Ta=25°C)

Ratings Symbol Ratings Unit
Minimum Breakdown Voltage

BV 75 V
@IR= 100uA
Peak Forward Surge Current

IFsurge 500 mA
PW< 1sec.
Maximum Forward Voltage
IF= 200mA

VF 1.0 V

Maximum Reverse Current
VR= 50V

Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100

Maximum Thermal Resistance

RECTRON USA

Ω

1315 John Reed Court, Industry, CA 91745

Tel: [phone] Fax: [phone]

IR

100 nA

Cj 4 pF
trr 4 ns

RθJA 0.35

www.rectron.com

°

C/mW