RECTRON
SEMICONDUCTOR
TECHN ICAL SPE CIFIC ATIO N
1N4148 mini-MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items S
Reverse Voltage VR 75 V
Reverse Recovery
Time
Power Dissipation
3.33mW/°C
25°C
Forward Current IF 150 mA
Junction Temp. Tj -65 to 200°C
Storage Temp. Tstg -65 to 200°C
Mechanical Data
Items Materials
Package
Case Hermetically sealed glass
Lead/Finish D ouble stud/Solder Plating
Chip Glass Passivated
M
ini MELF
mbol Ratings Unit
trr 4 ns
P 500 mW
0.4
0.2
2 Places
MM4148
3.40
3.20
Dimensions in millimeters
1.40
1.30
FLEM-inimFLEM-inim
FLEM-inimFLEM-inim
FLEM-inim
Electrical Characteristics (Ta=25°C)
Ratings Symbol Ratings Unit
Minimum Breakdown Voltage
BV 100 V
@IR= 100uA
Peak Forward Surge Current
IFsurge 500 mA
PW< 1sec.
Maximum Forward Voltage
IF= 10mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Maximum Thermal Resistance
Maximum Rectification Efficiency
Vrf= 2V, f= 100MHz
RECTRON USA
Ω
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
VF 1.0 V
IR
0.025
5.0
50
Cj 4 pF
trr 4 ns
RθJA 0.35
ην
0.45 -
www.rectron.com
°
C/mW
uA