RECTRON FSM107, FSM106, FSM105, FSM104, FSM103 Datasheet
...
RECTRON
.095 (2.4
)
.106 (2.7
)
.028 (.60
)
.018 (.46
)
.190 (4.8
)
.205 (5.2
)
SOLDERABLE
ENDS
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEA TURES
* Fast switching
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.015 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
FSM101
THRU
FSM107
MELF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at TA = 55oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Thermal Resistance
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC Volts
Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 4)
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.
4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
@TA = 25oC
@TA = 125oC
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
(Note 2) Rθ
(Note 3) Rθ
C
J
TJ, T
STG
SYMBOL
V
F
I
R
trr
FSM101 FSM103FSM102 FSM104 FSM106FSM105 FSM107
50 100 200 400 600 800 1000
35 70 140 280 420 560 70030Volts
50 100 200 400 600 800 1000
30
JL
JA
FSM101 FSM103FSM102 FSM104 FSM106FSM105 FSM107
150 250 500
75
15
-65 to + 175
1.3
50
5.0
100 uAmps
UNITS
Volts
Volts
Amps1.0
Amps
0
C/W
0
C/W
pF
0
C
UNITS
uAmps
uAmps
nSec
2001-4
RATING AND CHARACTERISTIC CURVES
(
FSM101 THRU FSM107
)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
1.0
.8
.6
.4
Single Phase
Half Wave 60Hz
.2
Resistive or
Inductive Load
0
AVERAGE FORWARD CURRENT, (A)
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
4
1.0
TJ = 100
.4
.1
.04
TJ = 25
INSTANTANEOUS REVERSE CURRENT, (uA)
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
8.3ms Single Half Sine-Wave
(JEDED Method)
0
FORWARD SURGE CURRENT, (A)
12468 10 20 40 6080100
NUMBER OF CYCLES AT 60Hz
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
TJ = 25
10
Pulse Width = 300us
1% Duty Cycle
1.0
.1
INSTANTANEOUS FORWARD CURRENT, (A)
.01
.6 .8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
50
NONINDUCTIVE10NONINDUCTIVE
( + )
25 Vdc
(approx)
(¡V)
NOTES:
TIME CHARACTERISTIC
D.U.T
1
NONINDUCTIVE
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
(¡V)
( + )
+0.5A
-0.25A
-1.0A
trr
0
1cm
SET TIME BASE FOR
50/100 ns/cm
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
)
200
pF
(
100
60
40
20
10
6
TJ = 25
4
2
JUNCTION CAPACITANCE,
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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