RECTRON FR801S, FR806S, FR805S, FR803S, FR802S Datasheet
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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes
FEATURES
* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High surge capability
* High reliability
FAST RECOVERY
FR801S
THRU
FR806S
D2PAK
MECHANICAL DATA
* Case: D2PAK molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
.05 (1.27 REF.)
.185 (4.70)
.177 (4.50)
.051 (1.29)
.049 (1.25)
* Mounting position: Any
* Weight: 2.2 grams
* Polarity: As marking
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at TC = 75oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 8.0A DC Volts
Maximum DC Reverse Current
at Rated DC Blocking Voltage TA = 25oC
Maximum Full Load Reverse Current Average,
Full Cycle at TC = 100oC
Maximum Reverse Recovery Time (Note 1)
NOTES :
1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts
3. Thermal Resistance Junction to Case.
4. Suffix “R” for Reverse Polarity.
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R θ
JC
C
J
TJ, T
STG
SYMBOL
V
F
I
R
trr
FR801S FR802S FR803S FR804S FR805S FR806S
FR801S FR802S FR803S FR804S FR805S FR806S
.343 (8.70)
.335 (8.50)
.151 (3.84)
.143 (3.64)
.200 (5.08)
.401 (10.19)
.399 (10.13)
Dimensions in inches and (millimeters)
50 100 200 400 600 800
35 70 140 280 420 560
50 100 200 400 600 800
-65 to + 150
150 250 500
.624 (15.84)
.576 (14.64)
.052 (1.32)
.048 (1.22)
.032 (0.81)
200
3
50
1.3
10
150 uAmps
.043 (1.10)
.065 (1.65)
.015 (0.381)
UNITS
Volts
Volts
Volts
Amps8.0
Amps
0
C/W
pF
0
C
UNITS
uAmps
nSec
2001-4
RATING AND CHARACTERISTIC CURVES
(
FR801S THRU FR806S
)
FIG. 1 - TYPICAL FORWARD CURRENT
8
6
4
Single Phase Half Wave
60Hz Inductive or
2
Resistive Load
0
AVERAGE FORWARD CURRENT, (A)
0 25 50 75 100 125 150 175
20
10
3.0
1.0
0.3
0.1
.03
INSTANTANEOUS FORWARD CURRENT, (A)
.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
DERATING CURVE
CASE TEMPERATURE, (oC)
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
TJ = 25oC
Pulse Width=300uS
1% Duty Cycle
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
300
250
200
150
100
CURRENT, (A)
50
PEAK FORWARD SURGE
0
1 2 5 10 20 50 100
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
6
4
2
1.0
.6
.4
.2
CURRENT, (uA)
.1
.06
INSTANTANEOUS REVERSE
.04
.02
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
SURGE CURRENT
8.3ms Single Half
Sine-Wave
(JEDED Method)
NUMBER OF CYCLES AT 60Hz
TJ = 25
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
2
JUNCTION CAPACITANCE, (pF)
1
.1 .2 .4 1.0 2 4 10 20 40 100
TJ = 25oC
REVERSE VOLTAGE, ( V )
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE10NONINDUCTIVE
D.U.T
( + )
25 Vdc
(approx)
( - )
1
NONINDUCTIVE
1 Rise Time = 7ns max. Input Impedance =
NOTES:
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
OSCILLOSCOPE
(NOTE 1)
( - )
PULSE
GENERATOR
(NOTE 2)
( + )
RR
R
RR
+0.5A
-0.25A
-1.0A
EE
E
EE
0
CC
C
CC
TT
T
TT
RR
R
RR
trr
1cm
OO
O
OO
SET TIME BASE FOR
50/100 ns/cm
NN
N
NN
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