RECTRON FFM304, FFM303, FFM302, FFM307, FFM306 Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICA TION

SURFACE MOUNT GLASS PASSIVATED

FAST RECOVERY SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes

FEATURES

* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.24 gram

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

0.125 (3.17

0.115 (2.92

FFM301

THRU

FFM307

DO-214AB

)
)

0.245 (6.22

0.220 (5.59

)
)

0.280 (7.11

0.260 (6.60

0.103 (2.62

0.079 (2.06

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

MAXIMUM RATINGS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at TA = 55oC
Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)
Maximum Thermal Resistance
Typical Junction Capacitance (Note 1)

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS

Maximum Forward Voltage at 3.0A DC Volts
Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC
Maximum DC Reverse Current at
Rated DC Blocking Voltage

Maximum Reverse Recovery Time (Note 4)

NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC

2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.

3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.

4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A

(At TA = 25oC unless otherwise noted)

RATINGS

(At TA = 25oC unless otherwise noted)

CHARACTERISTICS

@TA = 25oC
@TA = 125oC

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

(Note 2) Rθ
(Note 3) Rθ

C

J

TJ, T

STG

SYMBOL

V

F

I

R

trr

FFM301 FFM303FFM302 FFM304 FFM306FFM305 FFM307

50 100 200 400 600 800 1000
35 70 140 280 420 560 70015Volts
50 100 200 400 600 800 1000

JL
JA

FFM301 FFM303FFM302 FFM304 FFM306FFM305 FFM307

0.060 (1.52

0.030 (0.76

150 250 500

)
)
)
)

0.320 (8.13

0.305 (7.75

Dimensions in inches and (millimeters)

200

50
60

-65 to + 175

1.3
50
10

300 uAmps

)

)

)
)

0.012 (0.305

0.006 (0.152

0.008 (0.203

0.004 (0.102

)
)

)
)

UNITS

Volts

Volts
Amps3.0

Amps

0

C/W

0

C/W

pF

0

C

UNITS

uAmps
uAmps

nSec

2001-5

RATING AND CHARACTERISTIC CURVES

(

FFM301 THRU FFM307

)

FIG. 1 - TYPICAL FORWARD CURRENT

DERATING CURVE

5

4

3

2

Single Phase
Half Wave 60Hz

1

Resistive or
Inductive Load

0

AVERAGE FORWARD CURRENT, (A)

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE, ( )

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

20
10

3.0

1.0

0.3

TJ = 25¢J
Pulse Width=300uS
1% Duty Cycle

0.1

.03
.01

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

INSTANTANEOUS FORWARD CURRENT, (A)

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

200

100

50

8.3ms Single Half Sine-Wave

30

(JEDED Method)

CURRENT, (A)

20

PEAK FORWARD SURGE

10

1 5 10 50 100

NUMBER OF CYCLES AT 60Hz

FIG. 4 - TYPICAL JUNCTION CAPACITANCE

200
100

60
40

20
10

6

TJ = 25

4
2

JUNCTION CAPACITANCE, (pF)

1

.1 .2 .4 1.0 2 4 10 20 40 100

REVERSE VOLTAGE, ( V )

FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50
NONINDUCTIVE10NONINDUCTIVE

( + )

25 Vdc
(approx)

( - )

NOTES:

D.U.T

1
NON­INDUCTIVE

1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.

2. Rise Time = 10ns max. Source Impedance =
50 ohms.

OSCILLOSCOPE

(NOTE 1)

( - )

PULSE

GENERATOR

(NOTE 2)

( + )

+0.5A

-0.25A

-1.0A

trr

0

1cm

SET TIME BASE FOR
50/100 ns/cm

RECTRON