RECTRON ESM106, ESM105, ESM104, ESM103, ESM102 Datasheet
...
RECTRON
.095 (2.4
)
.106 (2.7
)
.028 (.60
)
.018 (.46
)
.190 (4.8
)
.205 (5.2
)
SOLDERABLE
ENDS
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
FEA TURES
* Fast switching
* Glass passivated device
* ldeal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.015 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
ESM101
THRU
ESM106
MELF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 55oC
Peak Forward Surge Current, IFM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC Volts
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
CHARACTERISTICS
@TA = 25oC
@TA =125oC
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
TJ, T
STG
SYMBOL
V
F
I
R
trr
ESM102
ESM101 ESM104
100
50 200
35 14070210 280105
50 200100 300 400150
30
15
-65 to + 175
ESM101 ESM104ESM102 ESM105 ESM106ESM103
0.95
5.0
100
35
ESM105 ESM106ESM103
300 400150
10
1.25
UNITS
Volts
Volts
Volts
Amps1.0
Amps
pF
0
C
UNITS
uAmps
nSec
2001-4
RATING AND CHARACTERISTIC CURVES
(
ESM101 THRU ESM106
)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE10NONINDUCTIVE
D.U.T
( + )
25 Vdc
(approx)
(¡V)
1
NONINDUCTIVE
1 Rise Time = 7ns max. Input Impedance =
NOTES:
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
OSCILLOSCOPE
(NOTE 1)
(¡V)
PULSE
GENERATOR
(NOTE 2)
( + )
+0.5A
-0.25A
-1.0A
trr
0
1cm
SET TIME BASE FOR
5/10 ns/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
TJ = 150
10
TJ = 100
1.0
.1
TJ = 25
INSTANTANEOUS REVERSE CURRENT, (uA)
.01
400 20 60 80 100 120 140
10
1.0
.1
.01
INSTANTANEOUS FORWARD CURRENT, (A)
.001
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.0
0
0 25 50 75 100125150175
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
TJ = 25
ESM101~ESM104
ESM105~ESM106
Pulse Width = 300uS
1% Duty Cycle
0 .2 .4 .6 .8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
60
50
40
TJ = 25
30
20
10
0
PEAK FORWARD SURGE CURRENT, (A)
.1 .5 1 2 5 10 20 50 400200100
NUMBER OF CYCLES AT 60Hz
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
TJ = 25
4
2
JUNCTION CAPACITANCE, (pF)
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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