RECTRON EFM306, EFM304, EFM303, EFM302, EFM301 Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICA TION

SURFACE MOUNT GLASS PASSIVATED

SUPER FAST SILICON RECTIFIER

VOLTAGE RANGE 50 to 400 Volts CURRENT 3.0 Amperes

FEA TURES

* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.24 gram

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

0.125 (3.17

0.115 (2.92

EFM301

THRU

EFM306

DO-214AB

)
)

0.245 (6.22

0.220 (5.59

)
)

0.280 (7.11

0.260 (6.60

0.103 (2.62

0.079 (2.06

0.060 (1.52

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

MAXIMUM RATINGS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current

at TA = 55oC
Peak Forward Surge Current IFM (surge): 8.3 ms single half

sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS

Maximum Forward Voltage at 3.0A DC Volts
Maximum DC Reverse Current

at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)

NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.

(At TA = 25oC unless otherwise noted)

RATINGS

(At TA = 25oC unless otherwise noted)

CHARACTERISTICS

@TA = 25oC
@TA =150oC

2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

C

J

TJ, T

STG

SYMBOL

V

F

I

R

trr

EFM301 EFM304

50 200
35 14070210 280105
50 200100 300 400150

EFM301 EFM304EFM302 EFM305 EFM306EFM303

0.030 (0.76

EFM302

100

)
)
)
)

0.320 (8.13

0.305 (7.75

Dimensions in inches and (millimeters)

125

50

-65 to + 175

0.95

5.0
50
35

)
)

)
)

EFM305 EFM306EFM303

300 400150

0.012 (0.305

0.006 (0.152

0.008 (0.203

0.004 (0.102

30

1.25

)
)

)
)

UNITS

Volts
Volts
Volts

Amps3.0

Amps

pF

0

C

UNITS

uAmps

nSec

2001-5

RATING AND CHARACTERISTIC CURVES

(

EFM301 THRU EFM306

)

FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50
NONINDUCTIVE10NONINDUCTIVE

D.U.T

( + )

25 Vdc
(approx)

( - )

1
NON­INDUCTIVE

1 Rise Time = 7ns max. Input Impedance =

NOTES:

1 megohm. 22pF.

2. Rise Time = 10ns max. Source Impedance =
50 ohms.

OSCILLOSCOPE

(NOTE 1)

( - )

PULSE

GENERATOR

(NOTE 2)

( + )

+0.5A

-0.25A

-1.0A

trr

0

1cm

SET TIME BASE FOR
10 ns/cm

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

100

1.0

10

TJ = 150

TJ = 100

.1

TJ = 25

10

1.0

.1

.01

FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE

6.0

Single Phase

5.0

Half Wave 60Hz
Resistive or

4.0

Inductive Load

3.0

2.0

1.0
0

0 25 50 75 100125150175

AVERAGE FORWARD CURENT, (A)

AMBIENT TEMPERATURE ( )

FIG. 4 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

EFM301~EFM304

EFM305~EFM306

TJ = 25

Pulse Width = 300uS
1% Duty Cycle

INSTANTANEOUS REVERSE CURRENT, (uA)

.01

400 20 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

175
150

125

8.3ms Single Half Sine-Wave
(

JEDEC Method

)

100

75
50
25

0

PEAK FORWARD SURGE CURRENT, (A)

1 2 5 10 20 50 100

NUMBER OF CYCLES AT 60Hz

INSTANTANEOUS FORWARD CURRENT, (A)

.001

0 .2 .4 .6 .8 1.0 1.2 1.4

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

200
100

60

EFM301~EFM304

40
20

10

6

TJ = 25

EFM305~EFM306

4
2

JUNCTION CAPACITANCE, (pF)

1

.1 .2 .4 1.0 2 4 10 20 40 100

REVERSE VOLTAGE, ( V )

RECTRON