RECTRON EFM106, EFM105, EFM104, EFM103, EFM102 Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICA TION

SURFACE MOUNT GLASS PASSIVATED

SUPER FAST SILICON RECTIFIER

VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere

FEA TURES

* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

0.067 (1.70

0.051 (1.29

)
)

EFM101

THRU

EFM106

)

0.180(4.57
)

0.160(4.06

DO-214AC

0.110 (2.79

0.086 (2.18

)
)

10

1.25

)
)

)
)

0.012 (0.305

0.091 (2.31

0.067 (1.70

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

MAXIMUM RATINGS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current

at TA = 55oC
Peak Forward Surge Current IFM (surge): 8.3 ms single half

sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC Volts
Maximum DC Reverse Current

at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)

NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.

(At TA = 25oC unless otherwise noted)

RATINGS

(At TA = 25oC unless otherwise noted)

CHARACTERISTICS

@TA = 25oC
@TA =150oC

2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

C

J

TJ, T

STG

SYMBOL

V

F

I

R

trr

EFM101 EFM104

50 200
35 14070210 280105
50 200100 300 400150

EFM101 EFM104EFM102 EFM105 EFM106EFM103

0.059 (1.50

0.035 (0.89

EFM102

100

)
)
)
)

0.209 (5.31

0.185 (4.70

Dimensions in inches and (millimeters)

30

15

-65 to + 175

0.95

5.0
50
35

0.006 (0.152

0.008 (0.203

0.004 (0.102

)
)

EFM105 EFM106EFM103

300 400150

UNITS

Volts
Volts
Volts

Amps1.0

Amps

pF

0

C

UNITS

uAmps

nSec

2001-4

RATING AND CHARACTERISTIC CURVES

(

EFM101 THRU EFM106

)

FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50
NONINDUCTIVE10NON-INDUCTIVE

( + )

25 Vdc
(approx)

( - )

NOTES:

D.U.T

1
NON­INDUCTIVE

1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.

2. Rise Time = 10ns max. Source Impedance =
50 ohms.

OSCILLOSCOPE

(NOTE 1)

PULSE

GENERATOR

(NOTE 2)

+0.5A

( - )

0

-0.25A

( + )

-1.0A

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

100

TJ = 150

10

TJ = 100

1.0

.1

TJ = 25

trr

1cm

SET TIME BASE FOR
5/10 ns/cm

10

1.0

.1

.01

FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE

2.0

Single Phase
Half Wave 60Hz
Resistive or
Inductive Load

1.0

0

0 25 50 75 100125150175

AVERAGE FORWARD CURENT, (A)

AMBIENT TEMPERATURE ( )

FIG. 4 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

TJ = 25

EFM101~EFM104

EFM105~EFM106

Pulse Width = 300uS
1% Duty Cycle

INSTANTANEOUS REVERSE CURRENT, (uA)

.01

400 20 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

70
60
50
40

TJ = 25

30
20
10

0

PEAK FORWARD SURGE CURRENT, (A)

.1 .5 1 2 5 10 20 50 400200100

NUMBER OF CYCLES AT 60Hz

INSTANTANEOUS FORWARD CURRENT, (A)

.001

0 .2 .4 .6 .8 1.0 1.2 1.4

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

200
100

60
40

20
10

6

TJ = 25

4
2

JUNCTION CAPACITANCE, (pF)

1

.1 .2 .4 1.0 2 4 10 20 40 100

REVERSE VOLTAGE, ( V )

RECTRON