RECTRON EDB105, EDB104, EDB102, EDB101, EDB106 Datasheet
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
GLASS PASSIVATED SUPER FAST
SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
FEATURES
* Good for automatic insertion
* Surge overloading rating - 50 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
MECHANICAL DATA
* UL listed the recognized component directory, file #94233
* Epoxy: Device has UL flammability classification 94V-O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(8.51)
.335
(8.12)
.320
.020
(
0.5
.205 (5.2
.195 (5.0
EDB101
THRU
EDB106
DB-1
)
.255 (6.5
)
.245 (6.2
)
.350 (8.9
)
.300 (7.6
)
.135 (3.4
)
.115 (2.9
)
.165 (4.2
)
.060
(
1.5
.155 (3.9
)
)
)
)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 55oC
Peak Forward Surge Current IFM (surge):8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC Volts
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
@TA = 25oC
@TA =150oC
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
TJ, T
STG
SYMBOL
V
F
I
R
trr
EDB102
EDB101 EDB104
100
50 200
35 14070210 280105
50 200100 300 400150
30
15
-65 to + 150
EDB101 EDB104EDB102 EDB105 EDB106EDB103
1.0
5.0
50
50
EDB105 EDB106EDB103
300 400150
10
1.25
UNITS
Volts
Volts
Volts
Amps1.0
Amps
pF
0
C
UNITS
uAmps
nSec
2001-5
RATING AND CHARACTERISTIC CURVES
(
EDB101 THRU EDB106
)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE10NONINDUCTIVE
( + )
25 Vdc
(approx)
( - )
NOTES:
D.U.T
1
NONINDUCTIVE
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
OSCILLOSCOPE
(NOTE 1)
( - )
PULSE
GENERATOR
(NOTE 2)
( + )
+0.5A
-0.25A
-1.0A
trr
0
1cm
SET TIME BASE FOR
10 ns/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
10
1.0
TJ = 150
TJ = 100
.1
TJ = 25
10
1.0
.1
.01
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.0
0
0 25 50 75 100 125150175
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
TJ = 25
SF11~SF14
SF15~SF16
Pulse Width = 300uS
1% Duty Cycle
INSTANTANEOUS REVERSE CURRENT, (uA)
.01
400 20 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
30
25
8.3ms Single Half Sine-Wave
(JEDEC Method)
20
15
10
5
0
PEAK FORWARD SURGE CURRENT, (A)
1 2 5 10 20 50 100
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD CURRENT, (A)
.001
0 .2 .4 .6 .8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
TJ = 25
EDB101~EDB104
EDB105~EDB106
4
2
JUNCTION CAPACITANCE, (pF)
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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