RECTRON BAW56 Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

SURFACE MOUNT, DUAL 1N4148 COMMON ANODE DIODE

Absolute Maximum Ratings (Ta=25°C)

Items Symbol Ratings Unit
Reverse VoltageVRRM 85 V
Reverse

Recovery Time
Forward Voltage
@ If = 50 mA
Forward Current IF 215 mA
Junction Temp. Tj -55 to 150
Storage Temp. Tstg -55 to 150

Mechanical Data

Items Materials
Package SOT-23
Lead Frame 42 Alloy
Lead Finish Solder Plating
Bond Wire Au
Mold Resin Epoxy
Chip Silicon

trr 4 ns

VF 1.0 V

°
°

C
C

BAW56

(1)

(2)

1. CATHODE

2. CATHODE

3. ANODE

(UNITS: mm)

32-TOS32-TOS

32-TOS32-TOS

32-TOS

(3)

Electrical Characteristics per Diode (Ta=25°C)

Ratings Symbol Ratings Unit
Reverse Breakdown Voltage IR= 100uA VBR 75 V

Repetitive Peak Reverse Voltage VRRM 85 V
Repetitive Peak Forward Current IFRM 450 mA
Forward Voltage

IF= 1mA
IF= 10mA
IF= 50mA
IF= 150mA
Reverse Current
VR= 75V
VR= 25V (Tj= 150°C)
VR= 75V (Tj= 150°C)

Junction Capacitance VR = 0 V, f = 1MHz Cj 2.0 pF
Reverse Recovery Time IF= IR= 10mA; RL= 100 ohms trr 4 ns
Thermal Resistance (junction to ambient) RΘJA 500

RECTRON USA

1315 John Reed Court, Industry, CA 91745

Tel: [phone] Fax: [phone]

VF

715

855
1000
1250

IR

1.0
30
50

°

www.rectron.com

mV

uA

C/W